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Boron-doped diamond electrode and preparation method and application thereof

A boron-doped diamond and diamond layer technology, applied in chemical instruments and methods, metal material coating technology, ion implantation plating, etc., can solve the problems of low electrochemical catalytic activity of BDD electrodes, easy to fall off, poor binding force, etc. , to achieve good electrical conductivity, compact structure, and prolong service life

Pending Publication Date: 2019-09-17
SHENZHEN INST OF ADVANCED TECH
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Problems solved by technology

[0003] However, in the actual application process, it is found that the electrochemical catalytic activity of the BDD electrode is low and the energy consumption is high.
In the prior art, the BDD surface is usually chemically modified, and some highly catalytically active metals or metal oxides are compounded on the BDD electrode surface to increase the BDD surface active sites and improve the electrocatalytic activity of the BDD electrode. The bonding force between highly catalytically active metals or metal oxide materials is poor, and it is easy to fall off

Method used

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  • Boron-doped diamond electrode and preparation method and application thereof
  • Boron-doped diamond electrode and preparation method and application thereof
  • Boron-doped diamond electrode and preparation method and application thereof

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[0050] Such as image 3 As shown, this embodiment also provides a method for preparing a boron-doped diamond electrode, including:

[0051] S10, providing a hard substrate, forming a hydrogen ion layer on the surface of the hard substrate, cleaning and drying to obtain a hard substrate with a hydrogen ion layer on the surface;

[0052] S20, preparing a gold-doped graphite target, and depositing a gold-doped diamond-like carbon film layer on the hydrogen ion layer by magnetron sputtering;

[0053] S30. Depositing a boron-doped diamond layer on the surface of the gold-doped diamond-like carbon film layer by hot wire chemical vapor deposition;

[0054] S40. Using the electrochemical stripping method to peel off the hard substrate to obtain a boron-doped diamond electrode, the boron-doped diamond electrode includes a boron-doped diamond layer and a gold-doped layer stacked on the surface of the boron-doped diamond layer diamond-like film layer.

[0055] In the embodiment of the...

Embodiment 1

[0063] A method for preparing a boron-doped diamond electrode, comprising:

[0064] S110. Take a single crystal silicon wafer substrate, place the single crystal silicon wafer in ethanol and deionized water for 5 minutes, and ultrasonically clean the substrate surface; inject energy perpendicular to the surface of the single crystal silicon wafer substrate to be 100KeV The hydrogen ions form a hydrogen ion layer, the hydrogen ion implantation depth is 2μm, and the hydrogen ion implantation dose is 3×10 16 ions / cm 2 ; Anneal the single crystal silicon wafer substrate implanted with hydrogen ions in an argon atmosphere for 5 minutes at an annealing temperature of 850°C to obtain a single crystal silicon wafer substrate with a hydrogen ion layer on the surface; then use ethanol and deionized water to ultrasonically Wash for 5 minutes to remove oil and dust on the surface, and blow dry with nitrogen for later use.

[0065] S120. After mixing the gold powder and the graphite powd...

Embodiment 2

[0069] A method for preparing a boron-doped diamond electrode, comprising:

[0070] S210. Take a single-crystal silicon wafer substrate, place the single-crystal silicon wafer in ethanol and deionized water for 5 minutes, and ultrasonically clean the substrate surface; inject energy perpendicular to the surface of the single-crystal silicon wafer substrate to be 100KeV. The hydrogen ions form a hydrogen ion layer, the hydrogen ion implantation depth is 3μm, and the hydrogen ion implantation dose is 5×10 16 ions / cm 2 ; Anneal the single crystal silicon wafer substrate implanted with hydrogen ions in an argon atmosphere for 5 minutes at an annealing temperature of 900°C to obtain a single crystal silicon wafer substrate with a hydrogen ion layer on the surface; then use ethanol and deionized water to ultrasonically Wash for 5 minutes, and blow dry with nitrogen for later use.

[0071] S220. After mixing the gold powder and the graphite powder evenly, place them in a steel mold...

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Abstract

The invention provides a boron-doped diamond electrode. The boron-doped diamond electrode comprises a boron-doped diamond layer and a gold-doped diamond-like film layer laminated on the boron-doped diamond layer. The boron-doped diamond electrode has stable structure, high electrocatalytic activity and low resistance energy consumption. The invention further provides a preparation method and application of the boron-doped diamond electrode.

Description

technical field [0001] The invention relates to the technical field of electrocatalytic materials, in particular to a boron-doped diamond electrode and its preparation method and application. Background technique [0002] In recent years, due to its high electrochemical oxidation potential, stable chemical properties and corrosion resistance, wide potential window, high oxygen evolution overpotential and other advantages, boron-doped diamond electrode (BDD) has received domestic outside the widespread attention. [0003] However, in practical applications, it is found that the electrochemical catalytic activity of BDD electrodes is low and the energy consumption is high. In the prior art, the BDD surface is usually chemically modified, and some highly catalytically active metals or metal oxides are compounded on the BDD electrode surface to increase the BDD surface active sites and improve the electrocatalytic activity of the BDD electrode. The binding force between highly...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35C23C16/27C23C28/04C02F1/461C02F101/30
CPCC23C14/0605C23C14/35C23C16/271C23C16/278C23C14/0005C23C28/046C02F1/46109C02F2001/46142C02F2101/30
Inventor 唐永炳谷继腾杨扬李子豪张文军
Owner SHENZHEN INST OF ADVANCED TECH
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