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A kind of preparation method of p-type crystalline silicon back electrode

A back electrode and crystalline silicon technology, applied in the field of solar cells, can solve the problems of increasing the cost of the back electrode paste, affecting the welding performance of the back electrode, increasing the width of the back electrode, etc., to improve the field passivation characteristics, improve the photoelectric conversion efficiency, Effect of Reducing Leakage Current

Active Publication Date: 2021-07-27
NANTONG T SUN NEW ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Printing the back silver paste directly on the aluminum paste may cause two problems. First, the mutual contact of silver and aluminum will affect the soldering performance of the back electrode; second, the edge of the back electrode needs to be covered by the aluminum back field, increasing the back electrode width, increasing the back electrode paste cost

Method used

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  • A kind of preparation method of p-type crystalline silicon back electrode
  • A kind of preparation method of p-type crystalline silicon back electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] 1. Preparation of Linear Interlayer-Glass Paste

[0029] Preparation of bismuth-boron-zinc-vanadium system glass powder: take the weight of bismuth-boron-zinc-vanadium system glass powder as 100%, take by weight 25% bismuth oxide, 20% boron oxide, 20% by weight of zinc oxide, 27% by weight of vanadium oxide, 6% by weight of strontium carbonate and 2% by weight of gallium oxide, and then using a known mixer such as a disperser or a three-roller Mix all the materials evenly, then carry out drying treatment for 3.5 hours, then transfer the dried raw materials to the crucible, then place the crucible containing the raw materials in the heating chamber, first raise the temperature to 950°C, then keep it warm for 1.5 hours, and then put the The smelted feed liquid passes through cooling rollers to obtain bismuth-boron-zinc-vanadium system glass powder, and then the bismuth-boron-zinc-vanadium system glass powder is crushed and sieved to obtain the median particle size D 50 I...

Embodiment 2

[0045] 1. Preparation of Linear Interlayer-Glass Paste

[0046] The preparation of bismuth-boron-zinc-vanadium system glass powder: take the weight of bismuth-boron-zinc-vanadium system glass powder as 100%, take by weight the bismuth oxide which is 40% by weight, the boron oxide which is 15% by weight, 15% by weight of zinc oxide, 24% by weight of vanadium oxide and 6% by weight of strontium carbonate, then utilize known mixers such as dispersers or three-rollers to mix the materials evenly, and then dry Treat for 4 hours, then transfer the dried raw materials to the crucible, then place the crucible containing the raw materials in the heating chamber, first raise the temperature to 1050 ° C, then keep it warm for 2 hours, and then pass the smelted material liquid through cooling rollers to obtain bismuth - boron-zinc-vanadium system glass powder, then crush and sieve the bismuth-boron-zinc-vanadium system glass powder to obtain the median particle size D 50 It is a bismuth-...

Embodiment 3

[0062] 1. Preparation of Linear Interlayer-Glass Paste

[0063] The preparation of bismuth-boron-zinc-vanadium system glass powder: take the weight of bismuth-boron-zinc-vanadium system glass powder as 100%, take by weighing 10% by weight of bismuth oxide, 25% by weight of boron oxide, 21% by weight of zinc oxide, 32% by weight of vanadium oxide, 8% by weight of strontium carbonate and 4% by weight of gallium oxide, and then using a known mixer such as a disperser or a three-roller Mix all the materials evenly, then carry out drying treatment for 4 hours, then transfer the dried raw materials to the crucible, then place the crucible containing the raw materials in the heating chamber, first raise the temperature to 850°C, then keep it warm for 2 hours, and then complete the melting The feed liquid is passed through the cooling roll to obtain the bismuth-boron-zinc-vanadium system glass powder, and then the bismuth-boron-zinc-vanadium system glass powder is crushed and sieved t...

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Abstract

The invention discloses a method for preparing a P-type crystalline silicon back electrode. The preparation method of the back electrode is: printing an all-aluminum paste on the P-type crystalline silicon back passivation layer, and then printing a linear intermediate layer on the all-aluminum paste. Glass paste, and finally overprint the back silver electrode on the linear interlayer-glass paste. The solar cell prepared by this method can maintain good contact with silver and aluminum without damaging the passivation layer, and does not affect the conductivity. The present invention can form a complete all-aluminum back field, improve the field passivation characteristics of the electrode region, reduce carrier coincidence, prevent silver from entering the silicon substrate, cause no leakage, reduce battery leakage current, and improve photoelectric conversion efficiency.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a method for preparing a P-type crystalline silicon back electrode. Background technique [0002] With the rapid development of modern industry, natural energy such as oil, coal, and natural gas on the earth are gradually exhausted, and the ensuing energy crisis, greenhouse effect and environmental pollution are becoming more and more serious, which forces human beings to seek alternative natural energy new clean energy. At present, the sun has gradually become an effective provider of new energy sources. Solar energy converts solar energy into electrical energy, which is the most direct way to convert solar energy with the fewest conversion links among all clean energy sources. [0003] At present, the solar cells on the market are mainly crystalline silicon solar cells, and considering the maturity of technology, photoelectric conversion efficiency and raw material sour...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022441H01L31/1876Y02P70/50H01L31/1804Y02E10/546Y02E10/547H01L31/022483H01L31/182
Inventor 朱鹏杨贵忠陈艳美王叶青
Owner NANTONG T SUN NEW ENERGY CO LTD
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