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Rare earth ion doped LuLaO3 ultrafast scintillation crystal, preparation method and application thereof

A rare earth ion and scintillation crystal technology, applied in the field of rare earth ion doped lanthanum lutetium oxide ultrafast scintillation crystal and its preparation, can solve the problems of limited commercial application and other problems, achieve short response time, reduce production cost, and stabilize optical performance Effect

Inactive Publication Date: 2019-10-18
NANJING TONGLI CRYSTAL MATERIALS RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the melting point of the above-mentioned hafnium oxide crystal is 2830°C, and the melting point of lutetium oxide crystal is 2450°C, both of which are higher than the melting points of common crucible materials platinum (Pt), iridium (Ir), and molybdenum (Mo). Using an expensive rhenium metal crucible, the cost price is 40,000 RMB / kg, and only a complete single crystal with a centimeter-sized size can be obtained. The above-mentioned unfavorable factors greatly limit the expectation of commercial application

Method used

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  • Rare earth ion doped LuLaO3 ultrafast scintillation crystal, preparation method and application thereof
  • Rare earth ion doped LuLaO3 ultrafast scintillation crystal, preparation method and application thereof

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Embodiment 1

[0023] 1) Preparation block: Yb with a purity of 99.99% 2 o 3 and Lu 2 o 3 , 99.999% La 2 o 3 As the initial raw material, and according to the molar ratio of 3:44.5:52.5 for batching. After the raw materials are fully ball milled and mixed, they are pressed into cakes with an isostatic press, put into an alumina ceramic crucible and put into a muffle furnace for sintering. The firing temperature is 1500°C, the temperature is kept constant for 10 hours, and the heating and cooling rate is 100°C / h.

[0024] 2) Crystal growth: the crystal growth is carried out by the pulling method, and the raw materials are put into a molybdenum metal crucible, and pure Ar gas is used for protection. Raise the temperature to 2150°C to fully melt, and keep it for about 10 minutes so that the melt forms non-forced convection. After the seed crystal is lowered to 1-3cm above the liquid level of the melt to bake the seeds, the rotation speed is 5rad / , and the seeds are slowly inserted into t...

Embodiment 2

[0027] 1) Preparation block: Ce with a purity of 99.99% 2 o 3 and Lu 2 o 3 , 99.999% La 2 o 3 As the initial raw material, and according to the molar ratio of 0.2:47.3:52.5 for batching. After the raw materials are fully ball milled and mixed, they are pressed into thin rods with an isostatic press, with a size of φ8*70mm, and put into an alumina ceramic crucible and put into a muffle furnace for sintering. The firing temperature is 1500°C, the temperature is kept constant for 10 hours, and the heating and cooling rate is 100°C / h. After the calcination is completed, the material rods are processed and rounded to make two φ5*70mm material rods, which are respectively used as material rods and seed crystal rods for crystal growth in the floating zone method.

[0028] 2) Crystal growth: use the floating zone method for crystal growth, using a high-power floating zone furnace from Sci-direct company, the slit efficiency is 12% for initial melting, 14% for butt jointing of th...

Embodiment 3

[0031] 1) Preparation block: Yb with a purity of 99.99% 2 o 3 , CaCO 3 and Lu 2 o 3 , 99.999% La 2 o 3As the initial raw material, and according to the molar ratio of 3:0.5:44:52.5 for batching. After the raw materials are fully ball milled and mixed, they are pressed into cakes with an isostatic press, put into an alumina ceramic crucible and put into a muffle furnace for sintering. The firing temperature is 1500°C, the temperature is kept constant for 10 hours, and the heating and cooling rate is 100°C / h.

[0032] 2) Crystal growth: the crystal growth is carried out by the pulling method, and the raw materials are put into a molybdenum metal crucible, and pure Ar gas is used for protection. Raise the temperature to 2150°C to fully melt, and keep it for about 10 minutes so that the melt forms non-forced convection. After the seed crystal is lowered to 1-3cm above the liquid level of the melt to bake the seeds, the rotation speed is 5rad / , and the seeds are slowly inse...

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Abstract

The invention provides a rare earth ion doped LuLaO3 ultrafast scintillation crystal, which is a perovskite ABO3 structure that adopts intrinsic defect or rare earth ion as the activation ion, or rareearth ion as the main activation ion and is doped with a modulation ion, and also provides an appropriate production method of the scintillation crystal. While the production cost is lowered, the performance of the scintillation crystal is also ensured, especially in the high-energy ray detection field, the scintillation crystal has stable and excellent optical performance, and has the characteristic of short response time when acquiring 340nm wavelength fluorescence radiation under an excited state.

Description

technical field [0001] The invention belongs to the field of rare earth ion crystal growth, and in particular relates to a rare earth ion-doped lanthanum-lutetium oxide ultrafast scintillation crystal and a preparation method and application thereof. Background technique [0002] Scintillation material is a material that can absorb high-energy particles or rays and emit visible photons, and ultrafast scintillation material refers to a response time of less than 4ns (10 -9 s) The scintillator material. Such materials play a pivotal role in pulsed radiation detection, solar neutrino detection, and reaction dynamics, inertial confinement fusion, and cosmic ray research. [0003] Although different applications have different requirements for scintillators, scintillators are used to detect ionizing radiation in most applications, so scintillators are required to have a high blocking ability for ionizing radiation, that is, scintillators are required to have high dense and cont...

Claims

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Application Information

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IPC IPC(8): C30B29/22C30B15/00C30B13/00C09K11/78
CPCC09K11/7769C30B13/00C30B15/00C30B29/22
Inventor 赵衡煜徐军王东海李东振王庆国
Owner NANJING TONGLI CRYSTAL MATERIALS RES INST CO LTD
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