Enhanced Ga2O3 metal oxide semiconductor field effect transistor and manufacturing method thereof

Abstract

The invention discloses an enhanced Ga2O3 metal oxide semiconductor field effect transistor and a manufacturing method thereof, which mainly solve the problem of complex manufacturing of similar devices in the prior art. The enhanced Ga2O3 metal oxide semiconductor field effect transistor comprises a substrate, an epitaxial layer and an insulated gate dielectric layer from bottom to top; a sourceelectrode and a drain electrode are arranged on the epitaxial layer, and a gate electrode is arranged on the insulated gate dielectric layer. The thickness of the insulated gate dielectric layer is 10-30 nm; the epitaxial layer is an n-type Ga2O3 epitaxial layer, the thickness being 150-300 nm, and the electron concentration being 2.0 * 10 < 16 >-1.0 * 10 < 18 > cm <-3 >. The manufacturing key ofthe device is that before an insulated gate dielectric layer is deposited, the temperature of a cavity is set to be 200-500 DEG C, and O3 is introduced into an ALD reaction cavity to treat the surfaceof an n-type Ga2O3 channel layer for 5-15 min. The interface state density and static power consumption of the device are reduced, the threshold voltage is increased, the manufacturing cost and difficulty are reduced, and the method can be used for power devices and high-voltage switching devices.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a Ga 2 o 3 Metal-oxide-semiconductor transistors that can be used in power devices and high-voltage switching devices. Background technique [0002] Ga 2 o 3 As a wide bandgap semiconductor material, it has five isomers, of which monoclinic β-type Ga 2 o 3 The stability is the best, the bandgap width is about 4.8eV-4.9eV, and the theoretical breakdown electric field can reach 8MV / cm, which is twice more than the other two excellent wide bandgap semiconductor materials, silicon carbide and gallium nitride. The Liga excellent value is 3444, which is eight times that of silicon carbide and four times that of gallium nitride. Therefore Ga 2 o 3 It is a wide bandgap semiconductor material with excellent performance suitable for the preparation of power devices and high-voltage switching devices. [0003] The enhanced type is a necessary condition to ensure the stable...

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Problems solved by technology

[0004] One is to adopt a fin-wound structure, that is, to form a parallel fin-shaped channel array by plasma etching, but the manufacturing process of this method is relatively complicated and the cost is high;

[0005] The second is to use inductively coupled plasma to etch the gate groove, that is, use BCl 3 Etching gas, by thinning the Ga in the gate region 2 o 3 The thickness of the channel layer reduces the carrier concentration under the gate, thereby realizing the enhanced Ga 2 o 3 For metal oxide semiconductor field effect transistors, etching by this method will cause etching damage on the surface of the concave gate and affect device performance

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