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Preparation method of flexible energy storage film

A technology for energy storage and thin films, which is applied in the field of preparation of flexible energy storage films, can solve problems such as insufficient flexibility of energy storage films, and achieve high bending characteristics, high energy storage density, and good stability

Active Publication Date: 2020-02-07
INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Based on this, it is necessary to provide a method for preparing a flexible energy storage film to solve the problem of insufficient flexibility of the ceramic energy storage film; through this preparation method, the flexibility of the energy storage film is realized, and at the same time, the energy storage film has high reliability and High energy storage density, can be used as a dielectric material for film capacitors

Method used

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  • Preparation method of flexible energy storage film
  • Preparation method of flexible energy storage film
  • Preparation method of flexible energy storage film

Examples

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preparation example Construction

[0025] The preparation method of the flexible energy storage film provided by the present invention comprises:

[0026] S1, providing a flexible metal substrate;

[0027] S2, using titanium metal as the target material, depositing a titanium dioxide prefabricated layer on the flexible metal substrate by using the magnetic filter multi-arc ion plating method, wherein the working atmosphere in the magnetic filter multi-arc ion plating method is argon and oxygen mixed gas;

[0028] S3, performing heat treatment on the flexible metal substrate deposited with the titanium dioxide prefabricated layer to obtain a flexible energy storage film.

[0029] In step S1, the material of the flexible metal substrate is not limited, as long as it has good flexibility, strong high-temperature oxidation resistance, electrical conductivity, and does not react with the titanium dioxide ceramic film, including copper foil, titanium foil, silver foil, One of gold foil, platinum foil, aluminum foil...

Embodiment 1

[0064] Using flexible electrolytic copper foil as the substrate, with a thickness of 18 μm and a surface roughness of 0.8 μm, it was placed in a vacuum chamber and evacuated to 3×10 -3 Pa. The vacuum chamber is heated to 150°C, the holding time is 10min, filled with argon, the flow rate of argon is 20sccm, and the vacuum degree of the vacuum chamber is 2×10 -2 Pa, turn on the Hall ion source, set the voltage of the Hall ion source to 1000V, the current to 0.5A, and treat for 1min to make the surface tension of the copper foil reach 60 dynes.

[0065] Maintain a vacuum of 2.0×10 -2 Pa, the argon gas flow rate is 18 sccm, turn on the oxygen, make the oxygen flow rate 2 sccm, turn on the magnetic filter multi-arc ion plating power supply, adjust the arc current to 50A, draw the current to 9A, and apply a bias voltage of 5V to the flexible electrolytic copper foil. The metal is used as the target material, and the deposition time is 1min to form a titanium dioxide layer with a t...

Embodiment 2

[0070] With flexible silver foil as the substrate, the thickness of the silver foil is 12 μm, the surface roughness is 0.5 μm, placed in a vacuum chamber, and the vacuum is evacuated to 3×10 -3 Pa. The vacuum chamber is heated to 100°C, the holding time is 20min, filled with argon, the flow rate of argon is 30sccm, and the vacuum degree of the vacuum chamber is 3×10 -2 Pa, turn on the Hall ion source, set the voltage of the Hall ion source to 800V, and the current to 0.6A, and treat for 5min to make the surface tension of the copper foil reach 65 dynes.

[0071] Maintain a vacuum of 3.0×10 -2 Pa, the argon gas flow rate is 25 sccm, turn on the oxygen, make the oxygen flow rate 5 sccm, turn on the magnetic filter multi-arc ion plating power supply, adjust the arc current to 55A, draw the current to 10A, and apply a bias voltage of 6V to the flexible silver foil. As a target, a titanium dioxide layer with a thickness of 400 nm and a grain size of 80 nm was formed on the copper...

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Abstract

The invention relates to a preparation method of a flexible energy storage film. The preparation method comprises the following steps: providing a flexible metal substrate; using titanium metal as a target material, and forming a titanium dioxide prefabricated layer on the flexible metal substrate by a magnetic filtered multi-arc ion plating method, wherein the magnetic filtered multi-arc ion plating method adopts oxygen-containing protective gas as a working atmosphere; and thermally processing the flexible metal substrate with the titanium dioxide prefabricated layer to obtain the flexible energy storage film. The preparation method not only realizes the flexible modification of the energy storage film, but also enables the energy storage film to have high reliability and high energy storage density, so that the flexible energy storage film can be used as a dielectric material of a film capacitor.

Description

[0001] This application is a divisional application of the invention application of "application number: 201810829735.3, application date is July 25, 2018, title: flexible energy storage film and its preparation method, and film capacitor". technical field [0002] The invention relates to the field of energy, in particular to a preparation method of a flexible energy storage film. Background technique [0003] With the gradual development of electronic equipment towards miniaturization, multi-function and light weight, the electronic components that make up electronic equipment also need to develop towards the trend of miniaturization, light weight, high integration and multi-function. [0004] For film capacitors, the ideal way to achieve miniaturization is to increase the dielectric constant of the dielectric film to increase the capacitance. Dielectric films mainly include polymer energy storage films and ceramic energy storage films. In traditional film capacitors, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/002H01G4/005H01G4/12H01G4/33C23C14/08C23C14/32
CPCH01G4/1218H01G4/002H01G4/005H01G4/33C23C14/325C23C14/083
Inventor 冯雪王志建
Owner INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG
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