High-temperature three-dimensional Hall sensor with real-time working temperature monitoring function and manufacturing method thereof

Abstract

The invention discloses a high-temperature three-dimensional Hall sensor with a real-time working temperature monitoring function and a manufacturing method thereof, and belongs to the field of semiconductor sensors. According to the technical scheme, a buffer layer, an epitaxial layer and a barrier layer sequentially grow on a substrate, and high-density two-dimensional electron gas generated bypolarization charge induction exists in a potential well at a heterojunction interface of the epitaxial layer; a vertical Hall sensor used for sensing a magnetic field parallel to the surface of the device is arranged on the lower surface of the substrate, and a cross-shaped horizontal Hall sensor used for sensing a magnetic field perpendicular to the surface of the device is arranged on the uppersurface of the barrier layer. Beneficial effects are that: a completely wide bandgap material adapting to a high-temperature environment is adopted; the sensor can measure a magnetic field in any direction in a space at a high temperature, has the characteristics of small size, high sensitivity and the like, can perform accurate magnetic field measurement and real-time working temperature monitoring on the premise of not influencing the normal work of the sensor, and is expected to be widely applied to various military, aerospace, medical, micro and nano sensors in the future.

Description

technical field [0001] The invention belongs to the field of semiconductor sensors, in particular to a high-temperature three-dimensional Hall sensor with a function of real-time monitoring of working temperature and a manufacturing method thereof. Background technique [0002] Magnetic sensors convert magnetic field signals into detectable electrical signals. Magnetic sensors have important applications in fields such as automation, medical systems, and data communications. The Hall sensor based on the Hall effect principle is an important representative of the magnetic sensor and has the widest application. Traditional Hall sensors are mainly made of narrow bandgap semiconductor materials such as silicon (Si), gallium arsenide (GaAs), indium arsenide (InAs) and indium antimonide (InSb), and can work in environments below 125 °C. However, due to the small band gap of these materials, when working in a high temperature environment exceeding 125 °C, the mechanisms such as i...

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Problems solved by technology

The large band gap of GaN material makes the Hall sensor made of it work stably in high temperature environment, but it generally can only measure the one-dimensional longitudinal magnetic field perpendicular to the surface of the sensor, and can only realize the magnetic field measurement function, and cannot simultaneously Real-time monitoring of the temperature of the environment and the working of the sensor device

[0007] Hall sensors made of traditional semiconductor materials can only work stably at low temperature or room temperature. In an environment higher than 125°C, mechanisms such as impurity scattering and lattice scattering inside the material seriously affect the carrier mobility, resulting in the sensor not working properly.

The integrated three-dimensional Hall sensor designed to detect magnetic fields in any direction in space has a large size, which limits its application in micro- and nano-sized Hall sensors.

There is a high density of two-dimensional electron gas induced by polarized charges in the potential well at the GaN heterojunction interface, and there is a longitudinal electric field in the direction of the vertical channel, which reduces the sensitivity of the vertical Hall sensor

Although there have been some reports on GaN heterojunction high-temperature horizontal Hall sensors, these sensors can only realize the function of magnetic field measurement, and cannot simultaneously realize real-time monitoring of operating temperature

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