Superconducting nanowire single-photon detector working in two wavebands
A single-photon detector and superconducting nanowire technology, which is used in photometry, photometry, semiconductor devices, etc. using electrical radiation detectors, can solve complex processing, limit system detection efficiency, and fail to achieve complete internal quantum efficiency. Saturation and other problems to achieve the effect of improving the signal-to-noise ratio
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Embodiment 1
[0033] The overall technical scheme of superconducting nanowire single-photon detectors working in dual-band is divided into the following aspects: Technology 1 is to design and process a 4-level cascaded fractal structure with a line width of 40 nanometers in the photosensitive area (other line widths The nanowires can also adopt a 4-level cascaded fractal structure to improve the signal-to-noise ratio of the output detection pulse. In the specific implementation, the present invention does not limit the line width of the photosensitive area of the nanowires, and only 40 nanowires are used as an example for illustration) The second technique is to design a cavity structure in which the light absorption of superconducting nanowires at the wavelength of 1300 nanometers and the wavelength of 1550 nanometers is simultaneously enhanced to more than 80% based on the single-wavelength enhanced cavity structure composed of silicon dioxide, and The corresponding cavity structure is p...
Embodiment 2
[0041] 1. Nanowire device processing
[0042] Firstly, the electron beam exposure glue is spin-coated on the titanium niobium nitride film, and can be processed by scanning electron beam exposure technology and reactive ion etching technology. figure 1(a) The fractal nanowire structure shown in the layout, and the actual processed fractal photosensitive area is as follows figure 1 (b) shown.
[0043] 2. Design cavity structure and processing
[0044] The present invention utilizes as figure 2 (a) The optical structure shown in (a), the composition of the cavity from top to bottom is 100 nm thick gold layer, 500 nm thick first silicon dioxide layer, 600 nm thick silicon layer, 260 nm thick second two Silicon oxide layer, 9 nanometer thick fractal nanowire layer, 280 nanometer thick third silicon dioxide layer, 300 micron thick silicon substrate layer. Simulation results such as figure 2 As shown in (b), the absorption efficiency reaches more than 80% in the dual bands of...
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