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Superconducting nanowire single-photon detector working in two wavebands

A single-photon detector and superconducting nanowire technology, which is used in photometry, photometry, semiconductor devices, etc. using electrical radiation detectors, can solve complex processing, limit system detection efficiency, and fail to achieve complete internal quantum efficiency. Saturation and other problems to achieve the effect of improving the signal-to-noise ratio

Inactive Publication Date: 2020-03-27
TIANJIN UNIV
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Problems solved by technology

In order to enhance optical absorption at specific wavelengths in the above applications, narrow-band optical resonators need to be added to the surface of SNSPDs, but narrow-band optical resonators will also inhibit optical absorption at other wavelengths, thus limiting the application of SNSPDs in multiple bands. Such as multi-wavelength ranging, multi-spectral imaging, etc.
[0004] At present, the solution to achieve high system detection efficiency in multiple bands is to use a double-layer distributed Bragg mirror structure to achieve absorption efficiencies greater than 80% at 1064 nanometers, 1300 nanometers, and 1550 nanometers on a circular nanowire structure. The structure requires ion beam-assisted sputtering of 20 layers of periodic structures with nanometer precision requirements, and the processing is more complicated
[0005] In addition, since the photosensitive area in this scheme adopts a circular nanowire structure with a line width of 80 nanometers, the internal quantum efficiency has not been fully saturated at a wavelength of 1550 nanometers, which limits the detection efficiency of the system at long wavelengths.

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  • Superconducting nanowire single-photon detector working in two wavebands
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  • Superconducting nanowire single-photon detector working in two wavebands

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Embodiment 1

[0033] The overall technical scheme of superconducting nanowire single-photon detectors working in dual-band is divided into the following aspects: Technology 1 is to design and process a 4-level cascaded fractal structure with a line width of 40 nanometers in the photosensitive area (other line widths The nanowires can also adopt a 4-level cascaded fractal structure to improve the signal-to-noise ratio of the output detection pulse. In the specific implementation, the present invention does not limit the line width of the photosensitive area of ​​the nanowires, and only 40 nanowires are used as an example for illustration) The second technique is to design a cavity structure in which the light absorption of superconducting nanowires at the wavelength of 1300 nanometers and the wavelength of 1550 nanometers is simultaneously enhanced to more than 80% based on the single-wavelength enhanced cavity structure composed of silicon dioxide, and The corresponding cavity structure is p...

Embodiment 2

[0041] 1. Nanowire device processing

[0042] Firstly, the electron beam exposure glue is spin-coated on the titanium niobium nitride film, and can be processed by scanning electron beam exposure technology and reactive ion etching technology. figure 1(a) The fractal nanowire structure shown in the layout, and the actual processed fractal photosensitive area is as follows figure 1 (b) shown.

[0043] 2. Design cavity structure and processing

[0044] The present invention utilizes as figure 2 (a) The optical structure shown in (a), the composition of the cavity from top to bottom is 100 nm thick gold layer, 500 nm thick first silicon dioxide layer, 600 nm thick silicon layer, 260 nm thick second two Silicon oxide layer, 9 nanometer thick fractal nanowire layer, 280 nanometer thick third silicon dioxide layer, 300 micron thick silicon substrate layer. Simulation results such as figure 2 As shown in (b), the absorption efficiency reaches more than 80% in the dual bands of...

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Abstract

The invention discloses a superconducting nanowire single-photon detector working in two wavebands. The superconducting nanowire single-photon detector comprises a four-stage cascaded fractal photosensitive region structure of which the photosensitive region line width is preset nanometers; a cavity structure consisting of a gold layer, a first silicon dioxide layer, a silicon layer, a second silicon dioxide layer, a fractal nanowire layer, a third silicon dioxide layer and a silicon substrate layer is constructed in sequence from top to bottom; and the thicknesses of the first silicon dioxidelayer, the silicon layer and the second silicon dioxide layer is regulated and controlled until the resonance wavelength shifts to two wavebands needing absorption enhancement. According to the invention, the structure of the narrow-band optical cavity is improved, so that the photon absorption is enhanced under double wavebands; and the internal quantum efficiency of the device and the signal-to-noise ratio of a detection signal are improved by utilizing a four-stage cascaded narrow-linewidth fractal nanowire structure.

Description

technical field [0001] The invention relates to the field of superconducting nanowire single photon detectors, in particular to a superconducting nanowire single photon detector working in dual bands. Background technique [0002] Superconducting nanowire single photon detectors (SNSPDs) have a variety of excellent properties in the field of single photon detection: high efficiency (93% system detection efficiency at 1550 nm wavelength), low time domain jitter (less than 20 picoseconds), low dark mark Count rate (1 per second). Therefore, SNSPDs have been widely used in the testing of the basic principles of quantum optics, quantum key distribution, and space-ground long-distance communication. [0003] Since the energy of a single photon (on the order of 1 electron volt) is much greater than the band gap energy (on the order of millielectron volts) of superconducting materials such as niobium nitride and titanium niobium nitride, SNSPDs themselves have a wide range from ul...

Claims

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Application Information

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IPC IPC(8): H01L39/10H01L31/09H01L31/0216G01J1/42
CPCH01L31/09H01L31/0216G01J1/42G01J2001/442H10N60/84
Inventor 胡小龙胡南许亮孟赟邹锴王昭兰潇健
Owner TIANJIN UNIV
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