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Photoelectric programming polymorphic memory based on thin film transistor structure and manufacturing method thereof

A thin-film transistor and memory technology, applied in the field of multi-state memory and its preparation, to achieve low power consumption requirements, good film uniformity, and high storage density

Active Publication Date: 2020-04-14
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are few studies on the application of PQDs to memory devices

Method used

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  • Photoelectric programming polymorphic memory based on thin film transistor structure and manufacturing method thereof
  • Photoelectric programming polymorphic memory based on thin film transistor structure and manufacturing method thereof
  • Photoelectric programming polymorphic memory based on thin film transistor structure and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0040] Embodiment 1 Bottom gate structure

[0041] Step 1, put the conductive substrate into the atomic layer deposition reaction chamber, the temperature range of the deposition chamber is 20°C-40°C, the temperature range of the TMA source bottle and each pipeline is 20°C-40°C, and vacuumize;

[0042] In step 2, an aluminum oxide barrier layer is prepared by atomic layer deposition. With trimethylaluminum and oxygen plasma as the reaction source, each cycle includes: 0.1s-2s trimethylaluminum pulse, 10s-30s nitrogen purge, 0.1s-10s oxygen plasma pulse, 10s-30s nitrogen purge sweep. Thickness range 30nm-50nm;

[0043] Step 3, with PbBr2, CsBr, PbI2, CsI, dimethylformamide, oleic acid, oleylamine, anhydrous toluene, methyl acetate, normal hexane etc., solution method prepares CsPbBr3, CsPbI3 perovskite quantum dot, and with Spin coating evenly on the barrier layer at a specific speed;

[0044] In step 4, an aluminum oxide tunneling layer is prepared by a low-temperature ato...

Embodiment 2

[0048] Example 2 Top Gate Structure

[0049] Step 1, put the substrate into the magnetron sputtering to grow the IGZO channel layer, define the channel pattern by ultraviolet lithography, and etch with dilute hydrochloric acid;

[0050] Step 2, define the pattern of the source and drain electrodes by photolithography again, remove the glue with acetone, and evaporate the Ti / Au source and drain electrodes by electron beam. Thickness range 70nm-130nm;

[0051] Step 3, put it into the atomic layer deposition reaction chamber, the temperature range of the deposition chamber is 20°C-40°C, the temperature range of the TMA source bottle and each pipeline is 20°C-40°C, and vacuumize;

[0052] In step 4, an aluminum oxide barrier layer is prepared by atomic layer deposition. With trimethylaluminum and oxygen plasma as the reaction source, each cycle includes: 0.1s-2s trimethylaluminum pulse, 10s-30s nitrogen purge, 0.1s-10s oxygen plasma pulse, 10s-30s nitrogen purge sweep. Thickne...

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Abstract

The invention belongs to the technical field of semiconductor memories, and particularly relates to a photoelectric programming polymorphic memory based on a thin film transistor structure and a manufacturing method thereof. In the invention, various perovskite quantum dots are introduced into a floating gate thin film transistor trapping layer so that the polymorphic memory under a photoelectricprogramming condition is realized. The manufacturing method comprises the following steps: putting a conductive substrate into an atomic layer deposition reaction chamber, and controlling a temperature of the deposition chamber; preparing an aluminum oxide barrier layer through low-temperature atomic layer deposition; preparing perovskite quantum dots by a solution method, and uniformly carrying out spin-coating on the barrier layer; preparing an aluminum oxide tunneling layer through low-temperature atomic layer deposition; growing an IGZO channel layer through magnetron sputtering, and carrying out photoetching to form a channel pattern; and photoetching for the second time, and evaporating Ti / Au source and drain electrodes by an electron beam to obtain the photoelectric programmable polymorphic memory. In the invention, a polymorphic storage behavior of the memory can be realized by changing wavelength illumination in a voltage programming process. A solution is provided for research and development in fields of polymorphic storage, photoelectric detection, flexible electronics and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductor memory, and in particular relates to a multi-state memory and a preparation method thereof. Background technique [0002] With the continuous and rapid development of integrated circuit technology, people strongly hope to increase the data storage density of memory chips, and store a larger amount of data and information on smaller chips. In addition, artificial intelligence is gradually developing into a new generation of general-purpose technology, accelerating its penetration and integration with various economic and social fields. It has become the core frontier of new technological revolution and industrial transformation, and has become a new engine to promote economic and social development. In the field of artificial intelligence, the Internet of Things, social media, and security devices generate massive amounts of data, which require a large amount of memory to store, exchange, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/788H01L29/786H01L29/49H01L21/34G11C13/00
CPCG11C13/0007H01L29/4908H01L29/66969H01L29/7869H01L29/7887
Inventor 丁士进裴俊翔吴小晗张卫
Owner FUDAN UNIV
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