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Preparation method for preferential-growth ITO transparent conducting thin film

A transparent conductive thin film and thin film technology, applied in the field of solar cells, can solve the problems of high Hall mobility, light transmittance and unsatisfactory electrical conductivity, etc., and achieve the effect of improving photoelectric performance

Inactive Publication Date: 2020-06-09
CHANGZHOU INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, DC magnetron sputtering technology is a high-speed deposition film preparation method. The prepared film samples have high density, fast deposition speed, stable film performance, high controllability of process parameters, and are suitable for industrial production. The ITO transparent conductive film prepared by magnetron sputtering technology is a single-phase polycrystalline structure, mainly including (211), (222), (400), (440), (622) and other grain structures. This polycrystalline structure makes The light transmittance and conductivity of the current ITO transparent conductive film are not ideal, but the ITO film used as a solar cell needs to have a good light transmittance, and must also maintain a high light transmittance in the ultraviolet region. In terms of conductivity, it also needs to be relatively high. high Hall mobility

Method used

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  • Preparation method for preferential-growth ITO transparent conducting thin film
  • Preparation method for preferential-growth ITO transparent conducting thin film
  • Preparation method for preferential-growth ITO transparent conducting thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1 prepares the ITO thin film with (222) preferred orientation

[0025] Step 1: Handling the Substrate

[0026] (1) Cut the quartz glass into 2×2cm 2 size;

[0027] (2) Soak the cut quartz glass in glass cleaning agent for 24 hours;

[0028] (3) The quartz glass soaked in the glass cleaning agent is ultrasonically cleaned 3 times with 15 megohm pure water;

[0029] (4) Dry the quartz glass after ultrasonic cleaning with pure water with high-purity nitrogen, and then put it into the vacuum chamber of the magnetron sputtering equipment.

[0030] Step 2: Preparation of ZnS buffer film:

[0031] (1) Vacuum the chamber so that the background vacuum reaches 1×10 -4 Pa;

[0032] (2) in 1×10 -4 Under the vacuum of Pa, the quartz glass substrate is heated, and the heating temperature is 150°C;

[0033] (3) Introduce high-purity argon gas with a purity greater than 99.99% into the vacuum chamber, carry out pre-magnetron sputtering treatment on the ZnS target, an...

Embodiment 2

[0048] Embodiment 2 prepares the ITO thin film with (222) preferential orientation

[0049] Step 1: Handling the Substrate

[0050] The processing method is the same as that in Example 1.

[0051] Step 2: Preparation of ZnS buffer film

[0052] (1) Vacuum the cavity so that the vacuum in the cavity reaches 1×10 -4 Pa;

[0053] (2) in 1×10 -4 Under the vacuum of Pa, the quartz glass substrate is not heated, so that its temperature is room temperature;

[0054] (3) Introduce high-purity argon gas with a purity greater than 99.99% into the vacuum chamber, perform pre-magnetron sputtering treatment on the ZnS target, magnetron sputtering for 5 minutes, and target power density 0.5W / cm 2 , sputtering time 5min;

[0055] (4) After the pre-magnetron sputtering treatment of the ZnS target is completed, the argon flow rate is controlled to 5 sccm, so that the vacuum degree of the chamber is maintained at 0.3Pa;

[0056] In an argon atmosphere, use a pre-sputtered ZnS target to c...

Embodiment 3

[0064] Embodiment 3 prepares the ITO thin film with (222) preferred orientation

[0065] Step 1: Handling the Substrate

[0066] The processing method is the same as that in Example 1.

[0067] Step 2: Preparation of ZnS buffer film:

[0068] (1) Vacuum the chamber so that the background vacuum reaches 1×10 -4 Pa;

[0069] (2) in 1×10 -4 Under the vacuum of Pa, the quartz glass substrate is heated, and the heating temperature is 300°C;

[0070] (3) Introduce high-purity argon gas with a purity greater than 99.99% into the vacuum chamber, carry out pre-magnetron sputtering treatment on the ZnS target, and magnetron sputtering for 5 minutes to remove oxides on the surface of the target;

[0071] (4) After the pre-magnetron sputtering treatment of the ZnS target is completed, the argon flow rate is controlled to be 20 sccm, so that the vacuum degree of the chamber is maintained at 10 Pa; Radio frequency magnetron sputtering is carried out on the surface to deposit zinc sulf...

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Abstract

The invention discloses a preparation method for a preferential-growth ITO transparent conducting thin film, and belongs to the field of solar cells. The preparation method comprises the steps of cleaning a substrate, preparing a zinc sulfide buffer thin film and preparing the preferred-orientation ITO thin film (222). Specifically, a magnetron sputtering technology is adopted, a ZnS thin film isdeposited on the clean glass substrate first, and the preferred-orientation ZnS (111) is obtained by controlling the temperature of the glass substrate; the ITO is deposited by controlling a preparation process, and then the preferred-orientation ITO thin film (222) can be obtained. According to the preparation method for the preferential-growth ITO transparent conducting thin film, by adding theZnS buffer layer, the preferred-orientation ITO thin film (222) is obtained, and the photoelectric property of the ITO can be effectively improved.

Description

technical field [0001] The invention relates to a method for preparing a preferentially grown ITO transparent conductive film, which belongs to the field of solar cells. Background technique [0002] A solar cell is a photovoltaic device based on a semiconductor p-n junction that absorbs sunlight and converts it into electrical energy. The solar light absorbing layer materials mainly include crystalline silicon and compound films, such as cadmium telluride, copper indium gallium selenide, and cuprous oxide. [0003] In the structure of crystalline silicon solar cells and thin-film solar cells, transparent conductive oxide films play an important role, one is as an electrode to collect photogenerated carriers, and the other is as a light-transmitting layer to allow sunlight to pass through the layer to reach the absorbing layer; In addition to the above functions, transparent conductive oxide films can also be used as infrared reflective materials, and transparent conductive ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/06C23C14/02
CPCC23C14/024C23C14/0629C23C14/086C23C14/352
Inventor 杨景景朱红
Owner CHANGZHOU INST OF TECH