AlGaAs/GaAs high-electron-mobility transistor of multi-channel insulated fin-type gate composite trench gate and preparation method thereof

Abstract

The invention discloses an AlGaAs / GaAs high-electron-mobility transistor of a multi-channel insulated fin-type gate composite trench gate. The AlGaAs / GaAs high-electron-mobility transistor sequentially comprises a GaAs or germanium substrate, a plurality of layers of AlGaAs / GaAs heterojunctions, a GaAs cap layer, a SiN passivation layer, a source electrode, a drain electrode and a gate electrode from bottom to top, wherein the gate electrode comprises a fin gate and a trench gate, and the distance between the boundary of an etching region of the trench gate and the boundary of a top gate region of the corresponding fin gate is less than 100nm; and insulating dielectric layers are further arranged between the gate electrode and the tops and the two side walls of the multiple layers of AlGaAs / GaAs heterojunctions. A three-dimensional fin gate and a concave trench gate structure are adopted at the same time, so that the gate controls a channel from the upper end; a three-dimensional fin gate electrode can control channel electrons from the side surface due to the gate width within 100nm, so that the gate control capability is obviously enhanced, and the transconductance and gain capability of a device are improved; and meanwhile, the insulating dielectric layers are introduced, so that the leakage current introduced by fin structure etching and trench gate etching can be effectively reduced, the static power consumption of the device is reduced, and the breakdown voltage of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to an AlGaAs / GaAs high electron mobility transistor with multi-channel insulating fin gate and composite groove gate and a preparation method thereof. Background technique [0002] High electron mobility transistors (HEMTs) are recognized as one of the most promising high-speed electronic devices. Because of its characteristics of ultra-high speed, low power consumption, and low noise (especially at low temperature), it can meet the needs of ultra-high-speed computers, signal processing, satellite communications, etc., and thus has been widely valued. As a new generation of microwave and millimeter wave devices, high electron mobility transistors (HEMTs) show unparalleled advantages in terms of frequency, gain and efficiency. GaAs / Al x Ga 1-x As material is the material system with the earliest development, the widest application and the most research. Since ...

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Problems solved by technology

[0004] However, the gate control capability of the existing fin structure devices needs to be further improved, and there is also the problem of gate leakage due to the introduction of the fin side gate structure

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