Aluminum-scandium alloy target material, preparation method and application thereof and vacuum consumable electro-arc furnace

A vacuum arc melting and alloy target technology, which is applied in vacuum evaporation plating, metal material coating technology, lighting and heating equipment, etc., can solve the problems of coarse grain structure of the target material and uniform melt mixing

Inactive Publication Date: 2020-08-28
FUJIAN ACETRON NEW MATERIALS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Chinese patent CN109252142A prepares an aluminum-scandium alloy target billet by cold crucible suspension smelting combined with frequency conversion electromagnet...

Method used

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  • Aluminum-scandium alloy target material, preparation method and application thereof and vacuum consumable electro-arc furnace
  • Aluminum-scandium alloy target material, preparation method and application thereof and vacuum consumable electro-arc furnace
  • Aluminum-scandium alloy target material, preparation method and application thereof and vacuum consumable electro-arc furnace

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[0035] The invention provides a method for preparing an aluminum-scandium alloy target, comprising the following steps:

[0036] The aluminum source and the scandium source are mixed and pressed to obtain a consumable electrode;

[0037] Welding the consumable electrodes to obtain welding electrodes;

[0038] placing the assembly welding electrodes in a water-cooled copper crystallizer to carry out the first vacuum arc melting and the first condensation in sequence to obtain primary ingots of aluminum scandium;

[0039] placing the aluminum-scandium primary ingot in a water-cooled copper crystallizer to perform the second vacuum arc melting and the second condensation in order to obtain the aluminum-scandium secondary ingot;

[0040] Repeating thermomechanical processing of the aluminum-scandium secondary ingot to obtain an aluminum-scandium alloy target;

[0041] The arc starting material is installed in the water-cooled copper crystallizer.

[0042] In the present inventi...

Embodiment 1

[0087] Use the process flow shown in Figure 1 to prepare an aluminum-scandium alloy sputtering target, and the specific steps are as follows:

[0088] (1) Aluminum (purity is 99.999%) is mechanically descaled, and a sulfuric acid solution with a concentration of 95wt% is used for degreasing treatment, washed with water to remove residual sulfuric acid solution and metal ions, and then placed in a vacuum drying oven at 25°C Drying; sponge scandium (purity is 99.99%) is dried in a vacuum drying oven at 25°C; the treated sponge scandium and aluminum are mixed evenly according to the ratio of 3at%:97at%, and the obtained aluminum scandium alloy ingredients are mixed in the Pressing at 400MPa for 5min, the density is 4g / cm 3 self-consumable electrodes.

[0089] (2) Four consumable electrodes with a mass of 70 g were assembled and welded by vacuum electron beam to obtain assembled welding electrodes, wherein the focusing current of vacuum electron beam was 1.5A, and the assembled w...

Embodiment 2

[0094] The aluminum-scandium alloy target was prepared according to the method of Example 1, the difference from Example 1 is:

[0095] In step (1), spongy scandium: aluminum=5at%: 95at%;

[0096] In step (2), the mass of a single consumable electrode is 75g;

[0097] In step (3), the electric current of the first vacuum arc melting is 2400A;

[0098] In step (4), the electric current of the second vacuum arc melting is 8000A;

[0099] In step (5), the temperature of the longitudinal rolling is 430° C., the time is 4 minutes, and the deformation of a single longitudinal rolling is 45%.

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Abstract

The invention provides an aluminum-scandium alloy target material, a preparation method and application thereof and a vacuum consumable electro-arc furnace, and relates to the technical field of target material preparation. The preparation method of the aluminum-scandium alloy target material comprises the following steps: after an aluminum source and a scandium source are mixed, a mixture is subjected to pressing and assembly welding, and an obtained assembly welding electrode is subjected to vacuum arc melting twice in a water-cooling copper crucible; and then repeated thermomechanical processing, machining and binding are carried out, the aluminum-scandium alloy target material is obtained, and the water-cooling copper crucible is provided with a water jacket and an arc-stabilizing coil. According to the aluminum-scandium alloy target material, the vacuum arc melting is carried out in the water-cooling copper crucible twice, pollution to scandium due to adoption of a refractory material in a traditional smelting furnace is avoided, the cleanliness is high, and the oxygen content is low; due to rapid cooling and subsequent thermomechanical processing in the water-cooling copper crucible, the structure of the aluminum-scandium alloy target material is improved, defects are overcome, the obtained aluminum-scandium alloy target material has a uniform microstructure and uniform average grain size and has no obvious defect of pores and segregation, and the density and the finished product rate of the aluminum-scandium alloy target material are high.

Description

technical field [0001] The invention relates to the technical field of target preparation, in particular to an aluminum-scandium alloy target, its preparation method and application, and a vacuum consumable electric arc furnace. Background technique [0002] Film Bulk Acoustic Wave Resonator (FBAR) and Bulk Acoustic Wave (BAW) resonator technology is a new generation of wireless radio frequency filters, duplexers and multiplexers, and has been increasingly used in the field of 5G mobile communications. The basic structure of FBAR is as follows Figure 1~2 As shown, it is composed of a piezoelectric thin film on a silicon substrate and two upper and lower layers of metal thin film electrodes. FBAR filter has good application prospects, can work in the 1-20GHz frequency band, has high quality factor (Q factor), small size, low loss, excellent temperature stability and complementary type formed with PMOS tube-NMOS tube MOS integrated circuit (CMOS IC) compatible features. An ...

Claims

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Application Information

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IPC IPC(8): C22C1/02C22C21/00C23C14/34C23C14/06F27B3/08
CPCC22C1/026C22C21/00C23C14/0641C23C14/3414F27B3/085
Inventor 蔡小勇张科曹建亮李强
Owner FUJIAN ACETRON NEW MATERIALS CO LTD
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