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High-frequency and low-loss flexible insulating adhesive film material, and preparation method and application thereof

A technology of insulating adhesive film and dielectric materials, applied in the direction of dielectric materials, circuit substrate materials, adhesives, etc., can solve the problems of reducing the bonding force between dielectric materials and copper foil, reducing the heat resistance and processability of dielectric materials, and achieving The effect of low dielectric loss, simple preparation method, and low dielectric constant

Active Publication Date: 2020-09-15
深圳中科华正半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method is easy to reduce the bonding force between the dielectric material and the copper foil, and reduces the heat resistance and processability of the dielectric material.

Method used

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  • High-frequency and low-loss flexible insulating adhesive film material, and preparation method and application thereof
  • High-frequency and low-loss flexible insulating adhesive film material, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] 1. Add 0.4g of sodium bicarbonate, 0.08g of fatty alcohol polyoxyethylene ether, and 2.5g of vinyltrimethoxysilane into 250ml of deionized water in turn, mix and stir for 180min at a stirring speed of 300rpm; add 0.06g of ethyl orthosilicate Add the reaction system, stir and react for 180min, the stirring rate is 300rpm, and discharge; after the prepared hollow silica is dried at 50°C, it is heat-treated at 300°C for 2 hours to obtain a hollow silica with a particle size of 380nm and a wall thickness of 50nm. Silicon oxide;

[0051] 2. Dissolve 5g of epoxy resin CYD-127E, 10g of NPCN-701, and 15g of YX4000 in 30g of butanone to obtain an epoxy resin solution;

[0052] 3. Add 30g of hollow silica prepared above, 2.4g of OMICURE DDA 5, 10g of N,N-dimethylformamide, and the epoxy resin solution prepared above into a stirrer, and stir at a speed of 300rpm for 12 hours to obtain electronic paste;

[0053] 4. Use a slit coater to coat the electronic paste on the surface of ...

Embodiment 2

[0056] 1. Add 0.4g of sodium bicarbonate, 0.08g of fatty alcohol polyoxyethylene ether, and 2.5g of vinyltrimethoxysilane into 250ml of deionized water in turn, mix and stir for 180min at a stirring speed of 300rpm; add 0.06g of ethyl orthosilicate Add the reaction system, stir and react for 180min, the stirring rate is 300rpm, and discharge; after the prepared hollow silica is dried at 50°C, it is heat-treated at 300°C for 2 hours to obtain a hollow silica with a particle size of 380nm and a wall thickness of 50nm. Silicon oxide;

[0057] 2. Dissolve epoxy resin NPES-909 5g, NPCN-701 10g, YX4000 10g, CYDB-700 5g in 30g butanone to obtain epoxy resin solution;

[0058] 3. Add 20g of the hollow silica prepared above, 2g of OMICURE U-415, 0.02g of OMICURE 24EMI, 10g of N,N-dimethylformamide, and the above-mentioned epoxy resin solution into the stirrer, at 300rpm Stir at a rotating speed for 12 hours to obtain an electronic slurry;

[0059] 4. Use a slit coater to coat the ele...

Embodiment 3

[0062] 1. Preparation of carbon spheres with a diameter of 500 nm. Take 80ml of the prepared glucose solution with a concentration of 1mol / L and add it to a polytetrafluoroethylene-lined reaction kettle, then put the reaction kettle into an oven at 175°C for 10 hours, then cool to room temperature naturally, and filter the product to obtain brown-black charcoal balls. Brown-black carbon spheres were alternately washed three times with absolute ethanol and deionized water, and dried at 60°C for later use.

[0063] 2. Add 10mmol of aluminum chloride to a mixture of 120ml of deionized water and 40ml of absolute ethanol, add 1g of the carbon spheres prepared above, stir for 30min, add 0.1mol of urea, and stir in a 60°C water bath for 24h. Then, the brown-black solid was obtained by suction filtration, and washed three times with deionized water and absolute ethanol to remove residual anions and cations, and the washed samples were dried in an oven at 60°C. Finally, the dried sam...

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Abstract

The invention discloses a high-frequency and low-loss flexible insulating adhesive film material, and a preparation method and application thereof. The insulating adhesive film material is composed oftwo polymer release films and a middle dielectric layer, and the dielectric layer is made of a composite dielectric material. The composite dielectric material comprises a polymer matrix and hollow filler particles, the radius of hollow parts in the hollow filler particles is 100 nm or above, and the mass content of the hollow filler particles in the composite dielectric material is 20-60%. The high-frequency and low-loss flexible insulating adhesive film material disclosed by the invention has low dielectric loss at high frequency (1-20 GHz).

Description

technical field [0001] The invention belongs to the technical field of electronic packaging materials, and more specifically, the invention relates to an insulating adhesive film material applied to semiconductor system-level packaging. Background technique [0002] According to PCB News, in the next five years, the overall market investment scale of China's 5G industry will exceed one trillion US dollars. With the advent of the 5G era, more stringent technical challenges are posed to PCBs. Compared with 4G, its indicators in terms of heat dissipation, frequency, speed, integration, multi-layering, and signal attenuation need to be greatly improved. Therefore, the development of high-frequency substrate products urgently needs to achieve breakthroughs in performance to promote the development of 5G mobile communication base stations, 5G smartphones, autonomous driving, wearable devices, and massive Internet of Things. [0003] With the high frequency and high speed of trans...

Claims

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Application Information

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IPC IPC(8): C09J163/00C09J163/04C09J11/04C09J7/10C09J7/30H01L23/29H05K1/03
CPCC09J163/00C09J163/04C09J11/04C09J7/10C09J7/30H01L23/293H05K1/036C08L2205/03C08L2205/025C08L2205/035C08L2203/206C09J2463/00C09J2203/326H05K2201/0137C08L63/00C08L63/04C08K7/26C08K7/24
Inventor 罗遂斌阮盼盼于淑会徐鹏鹏高春波孙蓉
Owner 深圳中科华正半导体材料有限公司
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