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High-temperature-resistant anti-reflection optical film and preparation method and application thereof

A reflective optical and optical film technology, which is applied in the field of high-temperature anti-reflective optical film and its magnetron sputtering preparation, can solve the problems of many types of raw materials, long preparation cycle, low yield and so on, so as to reduce the reflectivity and manufacture The effect of short cycle time and easy operation

Pending Publication Date: 2020-09-22
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this patent has the same problems as CN 109467317 A, which have many kinds of raw materials, complicated process, long preparation period, low yield and cannot be used at temperatures higher than 700°C for a long time.

Method used

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  • High-temperature-resistant anti-reflection optical film and preparation method and application thereof
  • High-temperature-resistant anti-reflection optical film and preparation method and application thereof
  • High-temperature-resistant anti-reflection optical film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Microscope lens with high temperature resistance prepared by magnetron sputtering

[0055] What adopted in this embodiment is the Lab 18 magnetron sputtering coating system produced by American Lesker Company.

[0056] Its preparation method comprises the following steps:

[0057] (1) Put the molybdenum trioxide palladium material and the silicon dioxide target into two adjacent palladium positions in the sputtering apparatus respectively, and adjust the sputtering power of the two targets to sputter the molybdenum trioxide volume fraction to 70% , molybdenum trioxide and silicon dioxide mixed film with a volume fraction of 30% silicon dioxide;

[0058] (2) With the quartz lens as the substrate, a 110nm molybdenum trioxide and silicon dioxide mixed film is sputtered by computer control time;

[0059] (3) Place the prepared lens sputtered with molybdenum trioxide and silicon dioxide mixed film in a muffle furnace, adjust the constant temperature to 900°C, take it out a...

Embodiment 2

[0063] (1) Put the molybdenum dioxide palladium material and the silicon dioxide target material into the two adjacent palladium positions in the sputtering apparatus respectively, and sputter the molybdenum dioxide volume fraction to 80% and 80% by regulating the sputtering power of the two targets. Molybdenum dioxide and silicon dioxide mixed film with a volume fraction of silicon dioxide of 20%;

[0064] (2) With the quartz lens as the substrate, a 100nm molybdenum dioxide and silicon dioxide mixed film is sputtered by computer control time;

[0065] (3) Place the prepared lens sputtered with molybdenum dioxide and silicon dioxide mixed film in a muffle furnace, adjust the constant temperature to 950°C, take it out after 5 hours at this temperature, and wait for the temperature to drop to Measure the reflectance with a spectrometer after room temperature;

[0066] (4) Place the lens in a high-temperature tube furnace, adjust the constant temperature to 800°C, and measure t...

Embodiment 3

[0069] (1) Put the molybdenum trioxide palladium material and the silicon dioxide target material into two adjacent palladium positions in the sputtering apparatus respectively, and use the quartz lens as the substrate, and control the sputtering power of the two targets on the substrate Sputtering a molybdenum trioxide and silicon dioxide mixed film with a volume of molybdenum trioxide of 15% and a volume fraction of silicon dioxide of 85%;

[0070] (2) sputtering a 100nm molybdenum trioxide and silicon dioxide mixed film on the quartz substrate by computer control time;

[0071] (3) Place the prepared lens sputtered with molybdenum trioxide and silicon dioxide mixed film in a muffle furnace, adjust the constant temperature to 900°C, take it out after 10 hours at this temperature, and measure the reflectance with a spectrometer ;

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Abstract

The invention provides a high-temperature-resistant anti-reflection optical film and a preparation method and application thereof. The method comprises the following steps that high-temperature treatment is carried out on a mixed film of a sublimable material and silicon dioxide, and a silicon dioxide film with a nano pore structure is obtained. The reflectivity of the anti-reflection optical filmprepared through the method can be reduced to be 0.3% or below, the anti-reflection center wavelength can be adjusted within the range of 400 nm to 1000 nm, the work temperature ranges from 0 DEG C to 1000 DEG C, and the high-temperature-resistant anti-reflection optical film can be used for improving the permeability of optical devices (such as optical windows, lenses, polarized lenses and optical filters) in a high-temperature application scene.

Description

technical field [0001] The invention belongs to the technical field of preparation of optical functional films, and relates to an anti-reflection optical film and its preparation method and application, in particular to a high-temperature resistant anti-reflection optical film and its magnetron sputtering preparation method and application. Background technique [0002] Optical thin films are an important class of optical components, which are widely used in modern optics, optoelectronics, optical engineering and other related fields of science and technology. It plays an irreplaceable role in the transmission and modulation of light, the division and synthesis of spectrum and energy, and the conversion of light and other energy states. [0003] The application requirements under some extreme conditions put forward high requirements for the high temperature resistance of the film. For example, the lens of the material growth system for in-situ optical microscopy imaging nee...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/10C23C14/08C23C14/58G02B1/11
CPCC23C14/352C23C14/10C23C14/083C23C14/5806G02B1/11
Inventor 谢黎明赵朝阳王新胜宋志伟
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA