Perovskite solar cell and preparation method thereof
A solar cell, perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as photoelectric conversion efficiency gaps
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[0020] In addition, if figure 2 As shown, the application also provides a method for preparing a perovskite solar cell, comprising the following steps: step S100: preparing a cathode on a substrate; step S200: preparing TiO on a substrate prepared with a cathode 2 Electron transport layer, TiO 2 Electron transport layer is doped with Be; Step S300: sequentially in TiO 2 A light absorbing layer, a hole transporting layer and an anode are prepared on the electron transporting layer. After preparing the cathode 200 on the substrate 100, in step S200, prepare TiO doped with Be 2 Electron transport layer, again on TiO 2 A light absorbing layer, a hole transporting layer and an anode are prepared on the electron transporting layer. by TiO 2 Doping Be in the electron transport layer improves the TiO 2 The optical bandgap of the electron transport layer reduces the optical loss of the light incident surface of the perovskite solar cell.
[0021] As another optional embodiment ...
Embodiment 1
[0030] 1. A transparent conductive layer of fluorine-doped tin oxide FTO is deposited on a glass substrate by APCVD method, the thickness of the transparent conductive layer is 400nm, and the square resistance is 10Ω / sq.
[0031] 2. Magnetron sputtering was used to deposit Be-doped TiO on the deposited FTO substrate 2 electron transport layer. Using BeO and TiO 2 As the target, the sputtering composition of the two targets is controlled according to the sputtering ratio, so that Be in TiO 2 The proportion of the electron transport layer is 1%, the deposition pressure is 20pa; the deposition atmosphere is a mixed gas of argon and oxygen, wherein the proportion of oxygen is 20%, TiO 2 The thickness of the electron transport layer was 50 nm.
[0032] 3. Prepare the perovskite light-absorbing layer by one-step anti-solvent method, and the material of the light-absorbing layer is FA 0.15 MA 0.85 PB 2.55 Br 0.45 , with a thickness of 500nm. Formamidine iodide FAI, methylamin...
Embodiment 2
[0041] 1 On the glass substrate, a fluorine-doped tin oxide FTO transparent conductive layer is deposited as a cathode by the APCVD method of atmospheric pressure chemical vapor deposition. The thickness of the transparent conductive layer is 400nm, and the square resistance is 10Ω / sq.
[0042] 2 On the deposited FTO substrate, spin-coat a spin-coating solution mixed with Be salt and Ti salt to prepare a Be-doped TiO2 electron transport layer. The thickness of the TiO2 electron transport layer is 50nm, and the proportion of Be in the film is 6 %. The spin coating solution of Be salt and Ti salt can be bis(acetylacetonate) diisopropyl titanate, BeO 4 Se or BeH 3 o 4 P+ is dissolved in absolute ethanol, and the mass ratio of Be salt and Ti salt can be 6:94.
[0043] 4 Prepare the perovskite light-absorbing layer by one-step anti-solvent method, and the material of the light-absorbing layer is FA 0.15 MA 0.85 PB 2.55 Br 0.45 , with a thickness of 500nm, using a mixed solve...
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