Silicon electrode with auxiliary electrode layer, preparation method, application and special clamp of silicon electrode with auxiliary electrode layer
A technology for auxiliary electrode layers and auxiliary electrodes, which is applied in the direction of electrode manufacturing, processing electrodes, electric processing equipment, etc., can solve the problems of large differences in material erosion rules and difficult elimination of arc transition areas, etc., to improve service life and reduce The effect of small arc and mature technology
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[0080] According to the method for preparing a silicon electrode with an auxiliary electrode layer according to an embodiment of the present invention, the method obtains an electrode base, an auxiliary electrode layer and an insulating layer through etching and deposition processes. The process is relatively mature and has application potential for mass production. The silicon electrode with auxiliary electrode layer prepared according to this method has the following advantages: 1) The surface of the main electrode is provided with an auxiliary electrode layer with a thickness of submicron scale, the two are independently powered, time-sharing and switched to participate in electrolytic processing, thereby reducing The radian of the arc transition area between the side wall and the bottom surface of the microstructure is reduced, and the processing accuracy is improved; 2) High-concentration doped silicon is used as the electrode substrate, and the deposited SiO 2 As an insul...
Embodiment 1
[0090] This embodiment provides a silicon electrode with an auxiliary electrode layer, and its structure refers to figure 1 . A silicon electrode 1 with an auxiliary electrode layer (hereinafter referred to as “silicon electrode”) is composed of a heavily doped silicon substrate 101 , an isolation layer 102 , an auxiliary electrode layer 103 , an insulating layer 104 and a conductive terminal 105 . The heavily doped silicon substrate 101 is conductive heavily doped silicon, the impurity is phosphorus atoms, and the doping concentration is 2×10 19 / cm 3 . The isolation layer 102 is a silicon dioxide film with a thickness of 200nm; the auxiliary electrode layer 103 is a silver film layer with a thickness of 100nm; the insulating layer 104 is a silicon dioxide composite film layer with a thickness of 300nm+200nm; the conductive terminal 105 The baked silver coating includes auxiliary electrode conductive ends 108 and main electrode conductive ends 109 . The heavily doped sili...
Embodiment 2
[0092] This embodiment provides a method for preparing a silicon electrode with an auxiliary electrode layer, and the schematic flow chart is as follows figure 2 , including the following steps:
[0093] a) Provide a single crystal silicon material substrate, the single crystal silicon material substrate is a P-type silicon chip doped with a high concentration, and its resistivity is 10 -3 Ω·cm, choose (100) crystal face, and polish on both sides;
[0094] b) Depositing a layer of isolation layer on the front surface of the monocrystalline silicon substrate, the material of the isolation layer is silicon dioxide, and the thickness is 200nm.
[0095] c) performing single-side photolithography on the surface of the isolation layer, using photoresist as a mask, depositing a layer of metal thin film on the surface, the material is selected as silver, and its thickness is 100nm. Using a lift-off process, the photoresist is removed to obtain a patterned metal layer, that is, an a...
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