Method and device for synchronous composite manufacturing of diamond micro-grating based on micro-addition and subtraction

A diamond and micro-grating technology, which is applied in the direction of manufacturing tools, laser welding equipment, metal processing equipment, etc., can solve the problems of diamond microstructure surface quality degradation, stress concentration at the edge of microstructure, and changes in the stress state of surrounding materials, so as to promote the application And industrialization, high quality and high aspect ratio, and the effect of improving the aspect ratio

Active Publication Date: 2022-06-17
TIANJIN UNIV OF TECH & EDUCATION TEACHER DEV CENT OF CHINA VOCATIONAL TRAINING & GUIDANCE
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

However, for high aspect ratio CVD diamond microstructure processing, there are still some shortcomings in ultrafast laser etching.
When ultrafast laser processing diamond materials, the high temperature near the focal spot often causes the phase transformation of the diamond material at the edge of the fine structure to form amorphous carbon and graphite phases. At the same time, the carbon phase removed by high-temperature gasification will recondense on the surface of the diamond material to form an amorphous carbon phase. , thereby reducing the surface quality of the diamond; in addition, the instantaneous removal of materials near the focal spot will lead to a sharp change in the stress state of the surrounding materials, which will cause stress concentration at the edge of the microstructure, cracks and collapse, resulting in a decrease in the surface quality of the diamond microstructure

Method used

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  • Method and device for synchronous composite manufacturing of diamond micro-grating based on micro-addition and subtraction
  • Method and device for synchronous composite manufacturing of diamond micro-grating based on micro-addition and subtraction
  • Method and device for synchronous composite manufacturing of diamond micro-grating based on micro-addition and subtraction

Examples

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Effect test

example 1

[0045] The surface of the diamond thin film sample was pretreated, and the diamond thin film sample was immersed in a suspension prepared by mass ratio of diamond micropowder and glycerin for 5 minutes by ultrasonic grinding, wherein the particle size of the diamond micropowder was 5 μm, and then immersed in anhydrous Ultrasonic cleaning in ethanol for 5 min, and then drying.

[0046] The pretreated diamond thin film samples were placed in figure 1 In the device shown, the low temperature hot wire CVD diamond deposition was carried out on the surface of the diamond film sample, and the process parameters used were: hydrogen flow rate of 800ml / min, methane flow rate of 50ml / min, hydrogen sulfide flow rate of 0.1ml / min, and reaction pressure of 10 Torr. , the hot wire temperature is 2100-2200 °C, the substrate temperature is 250 °C; the bias current is 4.0A, and the deposition time is 50 hours.

[0047] At the same time of low temperature hot wire CVD diamond deposition, laser ...

example 2

[0049] The surface of the diamond thin film sample was pretreated, and the diamond thin film sample was immersed in a suspension prepared by mass ratio of diamond micropowder and glycerin for 5 minutes by ultrasonic grinding, wherein the particle size of the diamond micropowder was 5 μm, and then immersed in anhydrous Ultrasonic cleaning in ethanol for 5 min, and then drying.

[0050] The pretreated diamond thin film samples were placed in figure 1 In the device shown, low-temperature hot-wire CVD diamond deposition was performed on the surface of the diamond film sample, and the process parameters used were: hydrogen flow rate of 1000ml / min, methane flow rate of 100ml / min, hydrogen sulfide flow rate of 0.4ml / min, and reaction pressure of 15 Torr. , the hot wire temperature is 2100-2200 °C, the substrate temperature is 100 °C; the bias current is 1.0A, and the deposition time is 80 hours.

[0051] At the same time of low temperature hot wire CVD diamond deposition, laser etch...

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Abstract

A method and device for synchronous composite manufacturing of diamond micro-gratings based on micro-addition and subtraction materials. The method is to pretreat the surface of the diamond film sample to remove surface impurities; perform low-temperature hot-wire CVD diamond deposition on the surface of the diamond film sample, and simultaneously deposit the CVD diamond film on the surface of the diamond film sample. The surface is patterned and micro-machined to obtain a diamond micro-grating. The device includes a low-temperature hot-wire CVD diamond deposition system for low-temperature hot-wire CVD diamond deposition, and a laser etching system for patterned micromachining. The low-temperature hot-wire CVD diamond deposition system has a vacuum reaction chamber with an optical window formed on the upper end , the vacuum reaction chamber is provided with a workbench, the outside of the vacuum reaction chamber is provided with a gas supply system, and the workbench is provided with a heating wire system for exciting the reaction gas and heating the diamond film sample. The invention realizes the space-time synchronous combination of micro-additive processing and micro-subtractive processing, and realizes the continuous in-situ growth of diamond in the non-etching area.

Description

technical field [0001] The present invention relates to a composite manufacturing method of micro-addition and subtraction materials. In particular, it relates to a method and device for manufacturing diamond micro-gratings based on micro-addition and subtraction materials synchronously. Background technique [0002] With its excellent broadband and transient properties, terahertz electromagnetic waves can achieve extremely high data transmission rates and stability in the process of wireless communication, and thus become the key technology for future 6G communication research and development. With the deepening of terahertz science and technology research at home and abroad, the development of related terahertz devices has put forward higher requirements for materials. CVD diamond material has broad application prospects in the field of terahertz devices due to its good thermal conductivity, low dielectric constant, low microwave loss, excellent mechanical properties and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/56C23C16/02B23K26/362
CPCC23C16/271C23C16/56C23C16/0254B23K26/362
Inventor 崔雨潇戚厚军
Owner TIANJIN UNIV OF TECH & EDUCATION TEACHER DEV CENT OF CHINA VOCATIONAL TRAINING & GUIDANCE
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