Chemical tin plating technology for crystalline silicon heterojunction solar cell

A technology for solar cells and electroless tin plating, applied in liquid chemical plating, metal material coating process, coating and other directions, can solve the problems of weakened stability of electroless tin plating solution, turbidity of electroless tin plating solution, long time consumption, etc. , to achieve the effect of improving long-term stability, reasonable formula and high production efficiency

Active Publication Date: 2020-11-13
GUANGZHOU SANFU NEW MATERIALS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in practical application, it is found that the electroless tin plating solution is not prone to discoloration and turbidity in a short period of time, but it is susceptible to external factors such as high temperature or low temperature for a long time, making the electroless tin plating solution prone to turbidity and precipitation and other phenomena, the quality is seriously affected, and the stability of the chemical tin plating solution is greatly weakened, and the chemical tin plating process takes about 5 hours, which takes a long time, so there is still room for improvement

Method used

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  • Chemical tin plating technology for crystalline silicon heterojunction solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A kind of electroless tin plating solution, with deionized water as solvent, comprising the components of following concentrations: tin methanesulfonate 10g / L, sodium dodecylbenzenesulfonate 0.25g / L, naphthalene ethoxysulfonate Acid 0.1g / L, stachyose 0.05g / L, distyryl ketone 0.06g / L, alkylaniline 0.5g / L, sodium hypophosphite 25g / L, dimethylaminoborane 25g / L, Alkylphenol polyoxyethylene ether 0.357g / L and polyethylene glycol 0.143g / L.

[0031] A preparation method for electroless tin plating solution, comprising the following steps:

[0032] S1. Mix tin methanesulfonate, sodium dodecylbenzenesulfonate, naphthalene ethoxysulfonic acid, stachyose and deionized water in the formula to obtain mixture A;

[0033] S2. Mix distyryl ketone, alkylaniline, sodium hypophosphite, dimethylaminoborane, alkylphenol polyoxyethylene ether and polyethylene glycol in the formula to obtain mixture B;

[0034] S3. Add the mixture B in step S2 to the mixture A in step S1, after pumping for ...

Embodiment 2

[0037] A kind of electroless tin plating solution, take deionized water as solvent, comprise the component of following concentration: tin protochloride 15g / L, sodium dodecylbenzene sulfonate 0.35g / L, naphthol ethoxy sulfonic acid 0.15g / L, stachyose 0.1g / L, distyryl ketone 0.08g / L, thiadiazole 0.7g / L, sodium hypophosphite 35g / L, dimethylaminoborane 30g / L, alkane Base phenol polyoxyethylene ether 0.667g / L and polyethylene glycol 0.333g / L.

[0038] A preparation method for electroless tin plating solution, comprising the following steps:

[0039] S1. Mix stannous chloride, sodium dodecylbenzenesulfonate, naphthalene ethoxysulfonic acid, stachyose and deionized water in the formula to obtain mixture A;

[0040] S2. Mix distyryl ketone, thiadiazole, sodium hypophosphite, dimethylaminoborane, alkylphenol polyoxyethylene ether and polyethylene glycol in a formula amount to obtain a mixture B;

[0041]S3. Add the mixture B in step S2 to the mixture A in step S1, after pumping for 4...

Embodiment 3

[0044] A kind of electroless tin plating solution, take deionized water as solvent, comprise the component of following concentration: tin methanesulfonate 15g / L, sodium dodecylbenzenesulfonate 0.4g / L, naphthalene ethoxysulfonate Acid 0.2g / L, stachyose 0.15g / L, distyryl ketone 0.1g / L, alkylaniline 0.9g / L, sodium hypophosphite 40g / L, dimethylaminoborane 40g / alkyl Phenol polyoxyethylene ether 1.25g / L and polyethylene glycol 0.75g / L. L.

[0045] A preparation method for electroless tin plating solution, comprising the following steps:

[0046] S1. Mix tin methanesulfonate, sodium dodecylbenzenesulfonate, naphthalene ethoxysulfonic acid, stachyose and deionized water in the formula to obtain mixture A;

[0047] S2. Mix distyryl ketone, alkylaniline, sodium hypophosphite, dimethylaminoborane, alkylphenol polyoxyethylene ether and polyethylene glycol in the formula to obtain mixture B;

[0048] S3. Add the mixture B in step S2 to the mixture A in step S1, after pumping for 4-5min...

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PUM

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Abstract

The invention relates to the technical field of metal surface treatment and particularly relates to a chemical tin plating technology for a crystalline silicon heterojunction solar cell, wherein a chemical tin plating solution takes deionized water as a solvent and contains components of the following concentrations: 10-20 g / L of tin salt, 0.25-0.5 g / L of sodium dodecyl benzene sulfonate, 0.1-0.25g / L of ethoxylated naphthol sulphonic acid, 0.05-0.2 g / L of stachyose, 0.06-0.12 g / L of Dibenzylideneacetone, 0.5-1 g / L of a grain refiner, 50-100 g / L of a reducing agent and 0.5-2.5 g / L of a dispersing agent. The technology provided by the invention has the beneficial effects that the chemical tin plating solution adopted is not easily influenced by a temperature which is too high or too low andis high in low-temperature stability and high-temperature stability; creatively, the stachyose and the Dibenzylideneacetone are used as a stabilizer through coordination, so that tolerance of the chemical tin plating solution to temperatures is obviously enhanced; and duration of the chemical tin plating technology is short, and production efficiency is high.

Description

technical field [0001] The invention relates to the technical field of metal surface treatment, in particular to an electroless tin plating process for crystalline silicon heterojunction solar cells. Background technique [0002] A typical crystalline silicon heterojunction solar cell is a HIT (Heterojunction with Intrinsic Thin-layer) cell, which is characterized by the fact that the front and back sides of single crystal silicon (c-Si) are both intrinsic amorphous silicon (i-a-Si:H) Thin layer and p+ or n+ heavily doped amorphous silicon layer, prepare transparent electrode ITO and collector on the outside of amorphous silicon (a-Si:H) on both sides to form a monocrystalline silicon heterojunction solar energy with a symmetrical structure Battery. One of the most important reasons for the high efficiency of HIT cells is the unique, high-quality intrinsic amorphous silicon thin layer, which can significantly passivate interface state defects, reduce sub-recombination, and ...

Claims

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Application Information

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IPC IPC(8): C23C18/52
CPCC23C18/52
Inventor 田志斌詹益腾邓正平陈维速谢飞凤
Owner GUANGZHOU SANFU NEW MATERIALS TECH
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