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Self-junction photodetector based on molecular beam epitaxy and its preparation method

A photodetector and molecular beam epitaxy technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of complex photodetector preparation methods, pollution, large dark current, etc., to improve device performance, reduce pollution, achieve Effects of Doping Concentration and Junction Depth

Active Publication Date: 2022-05-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the photodetector prepared by this method, on the one hand, has a certain limitation in the detection wavelength due to the limitation of the GeSn material itself, and the dark current is relatively large compared to the photocurrent; The detector preparation method is complicated, and the substrate needs to be taken out many times, which inevitably brings a lot of pollution, which also has a certain impact on the performance of semiconductor materials, such as dark current, etc.

Method used

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  • Self-junction photodetector based on molecular beam epitaxy and its preparation method
  • Self-junction photodetector based on molecular beam epitaxy and its preparation method

Examples

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Embodiment 1

[0034] A method for preparing a self-junction photodetector based on molecular beam epitaxy technology, the process flow chart is as follows figure 2 shown, including the following steps:

[0035] Step 1. Select a P-type single crystal silicon substrate (R=0.1~1.0Ω.cm) with a crystal orientation of , ultrasonically clean it with 10% hydrochloric acid at 100°C for 15 minutes, and then undergo 10% hydrogen oxidation Ultrasonic cleaning with sodium solution at 100°C for 15 minutes, followed by ultrasonic cleaning with acetone, alcohol and deionized water for 10 minutes respectively, to obtain a P-type monocrystalline silicon substrate with low roughness and high cleanliness;

[0036] Step 2. Put the p-type single crystal silicon Si substrate cleaned in step 1 into the chamber of the molecular beam epitaxy equipment, and vacuum the chamber to 10 -10 Torr, then heat the P-type single crystal silicon substrate to 250°C at a heating rate of 3°C / min and keep it for 50min to remove the...

Embodiment 2

[0045] According to the preparation method of Example 1, a semiconductor photodetector was prepared, only the temperature of the antimony source in step 3 was adjusted to 250 ° C to obtain Ge 0.92 Sb 0.08 Thin film, all the other steps are identical with embodiment 1.

Embodiment 3

[0047] According to the preparation method of Example 1, a semiconductor photodetector was prepared, only the temperature of the antimony source in step 3 was adjusted to 300 ° C to obtain Ge 0.90 Sb 0.10 Thin film, all the other steps are identical with embodiment 1.

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Abstract

The invention provides a self-junction semiconductor photodetector based on molecular beam epitaxy technology and a preparation method thereof, belonging to the field of photodetection devices. The photodetector prepared by the present invention adopts an asymmetric PIN shallow junction structure, and Sb atoms are doped into the Ge thin film by high-temperature in-situ doping in the cavity of the molecular beam epitaxy equipment, and Ge is modified into an N-type semiconductor; the whole process The preparation process is carried out in the cavity of molecular beam epitaxy equipment, which greatly reduces the pollution of foreign impurities and simplifies the process of photodetector manufacturing process. Compared with the traditional ion implantation doping method, this method will not Destroy the crystal lattice structure.

Description

technical field [0001] The invention belongs to the field of photodetection devices, and in particular relates to a self-junction semiconductor photodetector based on molecular beam epitaxy technology and a preparation method thereof. Background technique [0002] Optical communication has developed rapidly in recent years, and photodetectors are one of the important devices that convert optical signals into electrical signals. Photodetectors with high quantum efficiency, low dark current, high responsivity and high frequency bandwidth are prepared, and Si The base optoelectronic integrated receiving chip has always been the key research direction of researchers in related fields. Detectors based on Group III-V semiconductor materials such as InP have low dark current, but they are expensive, have poor thermal conductivity and mechanical properties, and are poorly compatible with Si processes, so their application in Si-based optoelectronic integration technology is limited....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/18H01L31/0352H01L31/0288H01L31/028
CPCH01L31/101H01L31/1804H01L31/0288H01L31/028H01L31/035272Y02P70/50
Inventor 李晨光张岱南唐坤张怀武李明明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA