Cadmium zinc telluride/silicon gamma ray X-ray detector and preparation method thereof

A detector and gamma ray technology, which is applied in the field of composite cadmium zinc telluride-silicon detector and its preparation, can solve the problems of unsatisfactory detection sensitivity and detection efficiency of the cadmium zinc telluride detector, and achieves the advantages of being suitable for popularization and use, high time efficiency and the like. Resolution, method is simple and easy to implement

Active Publication Date: 2020-12-25
SHANGHAI UNIV
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the detection sensitivity and detection effi

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cadmium zinc telluride/silicon gamma ray X-ray detector and preparation method thereof
  • Cadmium zinc telluride/silicon gamma ray X-ray detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] In this example, see figure 1 , a cadmium zinc telluride / silicon γ-ray X-ray detector, including a ray absorption detection area and a charge multiplication area; the ray absorption detection area is composed of a first metal electrode layer 1, a cadmium zinc telluride wafer 2 and a bonding transition layer 3, The bonding transition layer 3 adopts a metal layer, so that the ray absorption detection area forms a metal-semiconductor-metal structure, wherein the first metal electrode layer 1 is used as a cathode, and the bonding transition layer 3 is used as a bonding interface transition with the silicon wafer 4 layer, thereby the main functional layer structure of the detector is formed by indirect bonding of the CdZnTe wafer 2 and the silicon wafer 4 through the bonding transition layer 3; Composition, the multiplication region on the silicon chip adopts the SiPM unit 7 structure of the silicon photomultiplier tube, the SiPM unit 7 is composed of a silicon wafer 4, an a...

Embodiment 2

[0042] This embodiment is basically the same as Embodiment 1, especially in that:

[0043] In this example, see figure 2 , a cadmium zinc telluride / silicon γ-ray X-ray detector, including a ray absorption detection area and a charge multiplication area; the ray absorption detection area is composed of a first metal electrode layer 1, a cadmium zinc telluride wafer 2 and a bonding interface 9, wherein The first metal electrode layer 1 is used as a cathode, thereby forming a composite crystal by direct bonding of the cadmium zinc telluride wafer 2 and the silicon wafer 4, and there is a bonding interface 9 between the cadmium zinc telluride wafer 2 and the silicon wafer 4, forming a detector Main functional layer structure; the charge multiplication area is made up of the avalanche PN junction 5 made on the silicon wafer 4, the multiplication area on the silicon wafer adopts the SiPM unit 7 structure of the silicon photomultiplier tube, and the SiPM unit 7 is composed of the si...

Embodiment 3

[0048] This embodiment is basically the same as the previous embodiment, and the special features are:

[0049] In this embodiment, when preparing a CdZnTe gamma-ray X-ray detector with high detection sensitivity, the surface treatment of the CZT crystal, the preparation of the Si chip and the preparation of the upper electrode of the CZT wafer all adopt the aforementioned process, that is, in the first embodiment a, b, d. The bonding process of CZT wafer and Si wafer is as follows:

[0050] Indirect bonding of CZT wafer and Si sheet: use In as the intermediate transition layer to form a CZT-In-Si transition layer bonding structure, or use graphene as the intermediate transition layer to form a CZT-Gr-Si transition layer bonding structure, Then again in atmosphere or 10 -2 ~10 -5 The vacuum of Pa and the conditions of 25-350°C are used for bonding.

[0051] The cadmium zinc telluride gamma-ray X-ray detector with high detection sensitivity in this embodiment greatly improv...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention discloses a cadmium zinc telluride/silicon gamma ray X-ray detector and a preparation method thereof. The detector provided by the invention has high detection sensitivity and high detection efficiency, and is a composite cadmium zinc telluride-silicon detector with absorption and multiplication region separation. According to the invention, a CZT wafer and SiPM are bonded together,the CZT wafer is used as an absorption region for detecting nuclear radiation, the SiPM is used as a multiplication and amplification region of a carrier, and the CZT/Si nuclear radiation detector with an absorption region and a multiplication region separated and high detection sensitivity is formed. When a SiPM structure is adopted, the whole device is used as a high-sensitivity detector; and when a single APD unit or a part of APD units are used as pixel units, the detector can be used as a high-sensitivity pixel detector. A detection device with single photon counting capability, high energy resolution, high spatial resolution, high time resolution, high detection sensitivity and high detection efficiency is provided for imaging instruments of a next generation Compton gamma camera, asingle photon emission computed tomography instrument and a positron emission tomography instrument.

Description

technical field [0001] The invention relates to a CdZnTe / Silicon gamma-ray X-ray detector with high detection sensitivity and high detection efficiency and a preparation method thereof, in particular to a composite CdZnTe-Silicon detector with separation of absorption and multiplication regions and its preparation method. Used in the field of semiconductor technology. Background technique [0002] Cadmium Zinc Telluride (Cd (1-x) Zn x Te, or CZT for short), as a new generation of compound semiconductors, can work at room temperature due to its large band gap and high average atomic number, and has large stopping power and strong radiation resistance. In recent years, with the rapid development of high-energy resolution spectrometers, high-spatial-resolution imaging devices, and high-energy photon detection systems, in homeland security, high-energy nuclear physics, space physics, industrial and nuclear medicine imaging, and basic The application in fields such as scienti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/0336H01L31/117H01L31/18G01T1/161G01T1/24G01T1/36
CPCH01L31/0336H01L31/117H01L31/18G01T1/248G01T1/161G01T1/366
Inventor 闵嘉华梁小燕陈军戴灵恩冯成杰张继军王林军沈悦
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap