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Polishing composition for IC copper barrier layer CMP and preparation method thereof

A polishing composition and barrier layer technology, which is applied in the fields of polishing composition containing abrasives, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve good application prospects, assist in removing organic residues, and improve surface finish.

Inactive Publication Date: 2021-01-05
常州时创新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the CMP polishing of the barrier layer, the existing CMP polishing liquid is mainly for the early 45nm and above process, which is not suitable for the 28nm and below process, so it is necessary to develop a new generation of barrier layer polishing liquid for the 28nm and below process

Method used

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  • Polishing composition for IC copper barrier layer CMP and preparation method thereof
  • Polishing composition for IC copper barrier layer CMP and preparation method thereof
  • Polishing composition for IC copper barrier layer CMP and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] 0.1 parts by weight of graphene oxide, 0.05 parts by weight of BTA, 0.05 parts by weight of phytic acid, 0.05 parts by weight of acetylene glycol polyoxyethylene ether, 5 parts by weight of diethylene glycol monobutyl ether, and 0.2 parts by weight of hydrogen peroxide were sequentially mixed under stirring conditions Add 5 parts by weight of silicon dioxide, then add 50 parts by weight of modified polysiloxane defoamer, adjust the pH value of the solution to 3.0 with appropriate parts by weight of citric acid or dilute nitric acid, and dilute to required amount to prepare a polishing solution.

Embodiment 2

[0065] 0.1 parts by weight of graphene oxide, 0.05 parts by weight of BTA, 0.2 parts by weight of phytic acid, 0.05 parts by weight of acetylene glycol polyoxyethylene ether, 5 parts by weight of diethylene glycol monobutyl ether, and 0.2 parts by weight of hydrogen peroxide were sequentially mixed under stirring conditions Add 5 parts by weight of silicon dioxide, then add 50 parts by weight of modified polysiloxane defoamer, adjust the pH value of the solution to 3 with appropriate parts by weight of citric acid or dilute nitric acid, and dilute to the desired value with deionized water. The polishing liquid is prepared according to the demand.

Embodiment 3

[0067] 0.1 parts by weight of graphene oxide, 0.05 parts by weight of BTA, 0.05 parts by weight of phytic acid, 0.05 parts by weight of acetylene glycol polyoxyethylene ether, 10 parts by weight of diethylene glycol monobutyl ether, and 0.2 parts by weight of hydrogen peroxide were added in sequence under stirring 5 parts by weight of silicon dioxide, then add 50 parts by weight of modified polysiloxane defoamer, then adjust the pH value of the solution to 3 with appropriate parts by weight of citric acid or dilute nitric acid, and dilute with deionized water to the required amount to prepare a polishing solution.

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Abstract

The invention discloses a polishing composition for an IC copper barrier layer CMP. The polishing composition is prepared by the following method: sequentially adding a dispersing agent, a corrosion inhibitor, a wetting agent, an organic solvent and an oxidizing agent into a grinding material while stirring, adding a defoaming agent, and adjusting the pH value of the solution by using a pH regulator. The polishing composition can be used for chemical mechanical polishing of a copper interconnection barrier layer, surface pollutant particles, surface butterfly-shaped recesses and metal corrosion after polishing are all effectively controlled, the requirements of 28 nanometers and below processes can be met, and the polishing composition has a good application prospect.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing (CMP), in particular to a polishing composition for IC copper barrier layer CMP and a preparation method thereof. Background technique [0002] Nowadays, the development of ultra-large integrated circuits is close to the nanoscale technology node, and chemical mechanical polishing (CMP) technology is still the only mass-produced technology for the global planarization of IC copper process. The thickness of the layer (Ta / TaN) is close to the atomic level, and in order to prevent interface corrosion and corner corrosion, various silicon-based materials (such as black diamond BD and SiON, etc.) Perfect structure of copper wire in slot, no defect, no corrosion. At the same time, the dielectric material area must achieve a relatively high level of flatness and cleanliness in order to obtain a clear, clean, flat and sharp wafer surface. This puts forward higher requirements for the chemica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02H01L21/768
CPCC09G1/02H01L21/76829H01L2221/1052
Inventor 宋伟红蔡庆东
Owner 常州时创新材料有限公司
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