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PBn type InAsSb infrared detector material

A technology of infrared detector and contact layer, which is applied in the direction of semiconductor devices, sustainable manufacturing/processing, electrical components, etc., can solve the problems of low quantum efficiency of devices, excessive recombination current, and high working voltage, so as to suppress the generation of dark current, Effect of improving quantum efficiency and suppressing generation-recombination current

Pending Publication Date: 2021-02-05
KUNMING INST OF PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the defects of low quantum efficiency and high working voltage of the device caused by the existence of the pn junction depletion region, which leads to excessive recombination current of the device, and the small internal self-built electric field of the nBn barrier type, the purpose of the present invention is to provide a PBn type InAsSb Infrared Detector Materials

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  • PBn type InAsSb infrared detector material
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  • PBn type InAsSb infrared detector material

Examples

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Embodiment 1

[0031] A kind of PBn type InAsSb infrared detector material, such as figure 1 As shown, the structure of the infrared detector material is top electrode contact layer 1 , barrier layer 2 , absorption layer 3 , bottom electrode contact layer 4 , buffer layer 5 and substrate 6 from top to bottom.

[0032] The material of the top electrode contact layer 1 is p-type gallium antimonide (GaSb) single crystal doped with beryllium (Be); the doping concentration of Be is 1×10 18 cm -3 ; The thickness of the top electrode contact layer 1 is 300nm.

[0033] The material of the barrier layer 2 is p-type AlAs doped with Be 0.08 Sb 0.92 single crystal, the doping concentration of Be is 1×10 16 cm -3 , the forbidden band width of the material of the barrier layer 2 is greater than the forbidden band width of the absorbing layer 3, and the lattice matches the lattice of the material of the absorbing layer 3; the thickness of the barrier layer 2 is 120nm.

[0034] The material of the abs...

Embodiment 2

[0045] A kind of PBn type InAsSb infrared detector material, such as figure 1 As shown, the structure of the infrared detector material is top electrode contact layer 1 , barrier layer 2 , absorption layer 3 , bottom electrode contact layer 4 , buffer layer 5 and substrate 6 from top to bottom.

[0046] The material of the top electrode contact layer 1 is p-type GaSb single crystal doped with Be; the doping concentration of Be is 5×10 17 cm -3 ; The thickness of the top electrode contact layer 1 is 300nm.

[0047] The material of the barrier layer 2 is p-type AlAs doped with Be 0.08 Sb 0.92 single crystal, the doping concentration of Be is 1×10 16 cm -3 , the forbidden band width of the material of the barrier layer 2 is larger than the forbidden band width of the absorbing layer 3, and the lattice matches the lattice of the material of the absorbing layer 3; the thickness of the barrier layer 2 is 150nm.

[0048] The material of the absorbing layer 3 is unintentionally ...

Embodiment 3

[0059] Prepare infrared detector A with the PBn type InAsSb infrared detector material that embodiment 1 makes, prepare infrared detector B with the PBn type InAsSb infrared detector material that makes of embodiment 2, the preparation method of described infrared detector is as follows :

[0060] By combining dry etching and wet etching, first mesa etching the bottom electrode contact layer 4 (as in Example 1 to obtain a mesa height of 3.2 μm) to prepare samples; then using inductively coupled enhanced chemical vapor deposition (ICPCVD ) system sequentially deposits 100 nm thick SiO at 120 °C 2 and 300nm thick Si 3 N 4 Composite film passivates the sample to form a passivation layer 8, wherein SiO 2 Using SiH 4 , O 2 and Ar, the gas flow rate is 6.0sccm, 7.5sccm and 156sccm, respectively, to prepare Si 3 N 4 Using SiH 4 , NH 3 and Ar, the gas flow rates are 6.0sccm, 8sccm and 278sccm, respectively, to physically protect and electrically insulate the sample surface; u...

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Abstract

The invention relates to a PBn type InAsSb infrared detector material, and belongs to the technical field of optoelectronic materials and devices. The structure of the material sequentially comprisesa top electrode contact layer with the thickness of 100 nm-300 nm, a barrier layer with the thickness of 100 nm-200 nm, an absorption layer with the thickness of 2,000 nm-3,000 nm, a bottom electrodecontact layer with the thickness of 200 nm-500 nm, a buffer layer with the thickness of 50 nm-200 nm and a substrate from top to bottom. The infrared detector made of the material is small in dark current, the background limited temperature of the detector is increased, the requirement of an infrared detector assembly for refrigeration is reduced, the overall size, weight, power consumption and cost are reduced, the system reliability can be improved, and the system service life is prolonged.

Description

technical field [0001] The invention relates to a PBn-type InAsSb infrared detector material, which belongs to the technical field of optoelectronic materials and devices. Background technique [0002] Infrared detectors are an important part of infrared detection and thermal imaging systems. At present, infrared detectors are divided into working at low temperature, high temperature and room temperature according to the working temperature. High-performance medium-wave and long-wave infrared photon detectors such as mercury cadmium telluride, indium antimonide, quantum wells, and type II superlattices need to work at low temperatures to suppress the influence of thermally excited carriers, reduce the thermal noise of the device, and achieve low-temperature refrigeration. The introduction of the system will lead to an increase in the power consumption, volume and weight of the infrared system. Thermal infrared detectors can be used without refrigeration, but the device has...

Claims

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Application Information

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IPC IPC(8): H01L31/109H01L31/0224H01L31/0304H01L31/18
CPCH01L31/022408H01L31/03046H01L31/109H01L31/1844Y02P70/50
Inventor 邓功荣杨文运龚晓霞肖婷婷杨绍培宋欣波范明国袁俊赵鹏黄晖
Owner KUNMING INST OF PHYSICS
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