Boron-doped graphene aerogel and preparation method and application thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHAANXI SCI TECH UNIV
- Publication Date
- 2021-02-23
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Abstract
Description
【Technical field】
[0001] The invention belongs to the field of supercapacitors and semiconductor optoelectronic devices, and relates to a boron-doped graphene aerogel and a preparation method and application thereof. 【Background technique】
[0002] Graphene is a new type of two-dimensional material with a thickness of only 0.334nm. It has the characteristics of high thermal conductivity, high electrical conductivity, large specific surface area and easy modification of surface chemistry. Compared with traditional porous carbon materials, graphene has properties including high High electrical conductivity (104~106S / m), large specific surface area (~2675m 2 / g), high Young's modulus (~1TPa) and high fracture strength (~130GPa), graphene is a semi-metal / semiconductor material with zero band gap, which directly leads to the lower switching ratio of graphene And large leakage current, intrinsic graphene has few functional groups and poor compatibility with organic solvents, and ...