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Bismuth vanadate photo-anode as well as preparation method and application thereof

A technology of bismuth vanadate and photoanode, which is applied in the fields of clean energy and photoelectrochemistry, can solve the problems of slow photoanode water oxidation reaction kinetics, and achieve the effects of fast water oxidation kinetics, high photocurrent density, and easy-to-obtain reaction conditions

Active Publication Date: 2021-02-26
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the slow kinetics of the photoanode water oxidation reaction in the prior art, the object of the invention is to provide a bismuth vanadate photoanode and its preparation method and application. The bismuth vanadate photoanode provided by the invention has a higher The electron-hole separation efficiency and fast water oxidation kinetics enable it to achieve a higher photocurrent density at a lower bias voltage, showing a higher solar energy utilization rate, and solving the energy crisis and environmental pollution problems in the future great potential

Method used

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  • Bismuth vanadate photo-anode as well as preparation method and application thereof
  • Bismuth vanadate photo-anode as well as preparation method and application thereof
  • Bismuth vanadate photo-anode as well as preparation method and application thereof

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Embodiment approach

[0049] The third embodiment of the present invention provides an application of the above-mentioned bismuth vanadate photoanode in photoelectrocatalytic decomposition of water to produce hydrogen and oxygen.

[0050] The fourth embodiment of the present invention provides a photoelectrochemical electrolysis cell, including a photoanode and a photocathode, and the photoanode is the above-mentioned bismuth vanadate photoanode.

[0051] In order to enable those skilled in the art to understand the technical solution of the present invention more clearly, the technical solution of the present invention will be described in detail below in conjunction with specific examples and comparative examples.

[0052] The test materials used in the following examples are all conventional test materials in the art, and can be purchased through commercial channels.

Embodiment 1

[0054] A BVO photoanode with a fast water oxidation rate and a preparation method thereof, comprising the steps of:

[0055] (1) Ultrasonic cleaning of FTO conductive glass:

[0056] First cut with a glass cutter to obtain FTO conductive glass with a size of 3cm×4cm, then ultrasonically clean with acetone, ethanol and isopropanol for 30 minutes, and finally store in isopropanol solvent.

[0057] (2) Synthesis of carbon spheres by hydrothermal method:

[0058] Dissolve 4 g of glucose in 50 mL of deionized water and stir for 15 min to obtain a clear solution. Then the solution was transferred to a reaction kettle with a 100 ml polytetrafluoroethylene liner, and subjected to hydrothermal reaction at 180° C. for 3.5 hours to obtain a brown solution. Then the brown solution was centrifuged three times with pure water and ethanol at 12000rpm / 3 minutes to obtain carbon spheres with a relatively uniform size, which were dispersed in the ethanol solution for later use.

[0059] (3) ...

Embodiment 2

[0068] This example prepares composite BVO photoanodes with different contents of carbon spheres, the preparation method is the same as in Example 1, the difference is that the concentrations of the carbon spheres used in the spin coating in step (5) are respectively: 0.25C, 0.5C, 1C, 2C, The prepared photoanodes are marked as 0.25C-BVO, 0.5C-BVO, C-BVO, 2C-BVO, respectively.

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Abstract

The invention discloses a bismuth vanadate photo-anode and a preparation method and an application thereof. The preparation method comprises the steps that a bismuth vanadate layer and a carbon spherelayer are sequentially prepared on the surface of a transparent conductive substrate, then the bismuth vanadate layer and the carbon sphere layer are repeatedly prepared, an active layer is formed onthe surface of the transparent conductive substrate, and the active layer is formed by stacking n bismuth vanadate layers and n-1 carbon sphere layers in a staggered mode, the outermost layers of thetwo sides of the active layer are bismuth vanadate layers, and n is a natural number greater than 1; the bismuth vanadate precursor solution is subjected to spin-coating to form a bismuth vanadate precursor film, and then drying and calcining are carried out on the bismuth vanadate precursor film to form a bismuth vanadate layer; wherein the bismuth vanadate precursor solution contains vanadium salt and bismuth salt; the carbon sphere dispersion liquid is subjected to spin-coating into a carbon sphere film, and drying is carried out to form the carbon sphere film. The bismuth vanadate photo-anode provided by the invention has relatively high electron hole separation efficiency and rapid water oxidation kinetics, so that the bismuth vanadate photo-anode can achieve relatively high photocurrent density under relatively low bias voltage, and shows relatively high solar energy utilization rate.

Description

technical field [0001] The invention belongs to the technical field of clean energy and photoelectrochemistry, and relates to a bismuth vanadate photoanode, a preparation method and application thereof. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] At present, the energy crisis and environmental pollution are becoming more and more serious, and global natural disasters are also highlighted. Therefore, the search for renewable and clean energy has attracted the attention of all mankind. As an inexhaustible new energy source, solar energy has been widely favored by researchers in recent years in its development and utilization. Photoelectrochemical technology is an effect...

Claims

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Application Information

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IPC IPC(8): C25B11/031C25B11/091C25B1/04C25B1/55B82Y30/00B82Y40/00
CPCC25B1/04B82Y30/00B82Y40/00Y02P20/133Y02E60/36
Inventor 张晓阳王敏瑞王泽岩黄柏标程合锋郑昭科王朋刘媛媛张倩倩
Owner SHANDONG UNIV
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