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Nanomaterials and their preparation methods, applications and quantum dot light-emitting diodes

A technology of quantum dot luminescence and nanomaterials, which is applied in the field of quantum dot light-emitting diodes, nanomaterials and their preparation, can solve the problems of reducing QLED luminous efficiency, low energy level matching, and hoarding, and achieve good electron transmission performance and high energy level The effect of matching degree and improving luminous efficiency

Active Publication Date: 2021-12-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] ZnO, TiO 2 Metal oxide semiconductor materials such as metal oxide semiconductors are often used to prepare QLED electron transport layers. However, although these materials have the advantages of high electron transport efficiency and good stability, in the process of realizing the present invention, the inventors found that due to the high electron transport density, The energy level matching between it and the quantum dot light-emitting layer is low, which easily causes electrons to accumulate in the electron transport layer, resulting in the recombination of some electrons and holes in the transport layer, thereby reducing the luminous efficiency of QLEDs

Method used

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  • Nanomaterials and their preparation methods, applications and quantum dot light-emitting diodes
  • Nanomaterials and their preparation methods, applications and quantum dot light-emitting diodes
  • Nanomaterials and their preparation methods, applications and quantum dot light-emitting diodes

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Experimental program
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preparation example Construction

[0022] A kind of preparation method of nanometer material, please refer to figure 1 , including the following steps:

[0023] S01, providing a gallium precursor, a titanium precursor, a bicarbonate and a reaction solvent, dispersing the gallium precursor, the titanium precursor and the bicarbonate in the reaction solvent, and performing a reaction to obtain the first product;

[0024] S02. Calcining the first product in an oxidizing atmosphere to obtain titanium-doped gallium oxide nanomaterials.

[0025] In the preparation method of the above-mentioned nanomaterials provided in the embodiments of the present invention, the gallium precursor and the titanium precursor are first reacted with the bicarbonate to prepare the first product, and then the first product is calcined to realize The titanium-doped modification of gallium oxide nanomaterials greatly improves the electron transport efficiency of gallium oxide nanomaterials. The method is simple, easy to operate, easy to ...

Embodiment 1

[0061] In this embodiment, an electron transport material is prepared, and the specific process flow is as follows:

[0062] S11. Weigh gallium chloride and titanium sulfate according to the molar ratio of gallium atom and titanium atom being 0.9:0.1, dissolve gallium chloride and titanium sulfate in ethanol to form a precursor with a total concentration of metal salt of 0.5mol / L Then, weigh sodium bicarbonate according to the molar ratio of bicarbonate ion to the sum of gallium atoms and titanium atoms as 6:1, add sodium bicarbonate to the precursor solution and mix evenly, carry out at 25°C React for 0.5 hours, filter, collect the precipitated particles, and obtain the first product containing carbonate of gallium and titanium;

[0063] S12. Calcining the first product at 220° C. under an air atmosphere, and grinding it after cooling to room temperature to obtain titanium-doped gallium oxide nanomaterials.

[0064] The titanium-doped gallium oxide nanomaterial prepared abov...

Embodiment 2

[0066] In this embodiment, an electron transport material is prepared, and the specific process flow is as follows:

[0067]S21. Weigh gallium chloride and titanium nitrate according to the molar ratio of gallium atom and titanium atom being 0.95:0.05, dissolve gallium chloride and titanium sulfate in ethanol to form a precursor with a total concentration of metal salt of 0.5mol / L Then, weigh sodium bicarbonate according to the molar ratio of bicarbonate ion to the sum of gallium atoms and titanium atoms as 8:1, add sodium bicarbonate to the precursor solution and mix evenly, carry out at 30°C React for 20 minutes, filter, collect the precipitated particles, and obtain the first product of carbonate containing gallium and titanium;

[0068] S22. Calcining the first product at 250° C. under an oxygen atmosphere, and grinding it after cooling to room temperature to obtain titanium-doped gallium oxide nanomaterials.

[0069] The titanium-doped gallium oxide nanomaterial prepared...

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Abstract

The invention belongs to the field of display technology, and in particular relates to a nanometer material, its preparation method, application and quantum dot light-emitting diode. The preparation method of the nanometer material provided by the present invention comprises: dispersing the gallium precursor, the titanium precursor and bicarbonate in the reaction solvent, and performing the reaction to obtain the first product; performing calcination treatment on the first product under an oxidizing atmosphere to obtain Titanium-doped gallium oxide nanomaterials. By using titanium as a doping element to dope and modify gallium oxide, titanium atoms replace some gallium atoms into the lattice of gallium oxide to form n-type doping, which effectively improves the electron transport performance of gallium oxide nanomaterials. The method is simple. Easy to operate, easy to control, safe and stable.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a nanometer material, its preparation method, application and a quantum dot light-emitting diode. Background technique [0002] Quantum Dot Light Emitting Diodes (QLED) is an electroluminescent device, which has become a new generation of excellent display technology due to its advantages such as high luminous efficiency, high color purity, narrow luminous spectrum, and adjustable emission wavelength. Its technical level is also constantly improving. Among them, optimizing the device structure is a general direction to improve the performance of QLEDs. How to improve the luminous efficiency of the light-emitting layer by optimizing the charge transport layer is the most important link. [0003] ZnO, TiO 2 Metal oxide semiconductor materials such as metal oxide semiconductors are often used to prepare QLED electron transport layers. However, although these materials...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H10K50/115H10K50/16H10K2102/00H10K71/00
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION