Metal organic decomposition growth method of metastable phase rare earth nickel oxide film

Abstract

The invention discloses a metal organic decomposition growth method of a metastable phase rare earth nickel oxide film. The method is characterized in that organic acid salts such as hydroxy acid rareearth, hydroxy acid nickel and the like are dissolved in a single-benzene-ring aromatic organic solvent to be used as a precursor, the precursor is applied to a substrate through spin-coating and annealed under high oxygen pressure, so that non-vacuum growth of the metastable-phase rare earth nickel-based oxide thin film material with a metastable-phase structure and obvious metal insulator phasechange characteristics is realized. The viscosity of the precursor can be adjusted through the number of carbon atoms of a precursor carbon branched chain functional group, spatial configuration, solute-solvent ratio and the like, so that the growth characteristics such as deposition thickness, growth uniformity and the like of the film are controlled. The method is easy and convenient to operateand low in cost, and large-size, large-thickness and high-uniformity growth of metastable-phase rare earth nickel-based oxide thin film materials with different rare earth elements can be achieved. The prepared film has multiple electronic phase change characteristics, and can be applied to thermistors, fuel cell proton conductors, biomass detection, ocean weak electric field detection, strong correlation logic electronic devices and the like.

Description

technical field [0001] The invention belongs to the field of electronic materials, and in particular relates to a technical method for growing a rare earth nickel oxide film material with a thermodynamic metastable phase twisted perovskite structure by a metal organic decomposition method. The method can greatly improve the deposition uniformity and deposition thickness of the metastable phase thin film, has simple and low cost of operation, and does not need a vacuum process. The prepared film has the characteristics of metal-insulator phase transition under temperature triggering, and can be applied to sudden change thermistors, negative temperature coefficient thermistors, laser weapon protection, strongly correlated logic devices, atmosphere sensors, thermochromic windows, etc. Background technique [0002] Metastable phase rare earth nickel oxide is a kind of metastable phase metal insulator electronic phase change material with twisted perovskite structure, and its che...

AI Technical Summary

Problems solved by technology

1) Thin films such as samarium-nickel-oxygen and neodymium-nickel-oxygen are deposited on substrates with similar crystal structure and lattice parameters by pulsed laser deposition or metal-organic vapor deposition to make them non-uniform on the lattice template of the substrate Nucleation, thus forming a metastable phase film [APL Mater.2014, 2, 116110]; this type of method relies on the vacuum preparation process, and its technology is relatively complicated and difficult to achieve large-area deposition

2) Use magnetron sputtering and other methods to grow precursors of rare earth, nickel and other elements on silicon substrates, and then trigger the precursors to form rare earth nickel-based oxide metastable phase twisted perovskite through solid-state reaction under high oxygen pressure Structure [Nat.Commun.,2013,4,2676]; this kind of method also relies on the vacuum process, the cost is high and the process is relatively complicated

3) Use the ethylene glycol methyl ether solution of rare earth nitrate...

Images