Preparation method of silicon-based light-emitting diode
A light-emitting diode, silicon-based technology, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problem of reducing the output light intensity and luminous efficiency of the device, reducing device performance and long-term stability, and high excitons Problems such as luminescence quenching, leakage pinholes, and perovskite ion migration can be achieved to improve device luminous efficiency and long-term stability, reduce device leakage pinholes, and facilitate large-scale preparation
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Embodiment 1
[0053] S1, first perform standard cleaning on the silicon oxide substrate;
[0054] S2, preparing the anode bottom electrode, using an electron beam evaporation coating system and an evaporation mask to deposit 5nm of Cr and 150nm of Au successively on the silicon oxide wafer substrate after S1 treatment under high vacuum;
[0055] S3, using an oxygen plasma cleaning machine to clean the surface of the silicon oxide wafer after the bottom electrode is deposited in S2 for 5 minutes;
[0056] S4. Prepare a hole transport layer, spin-coat PEDOT:PSS on the substrate surface treated in S3, and then dry it on a hot stage at 140° C. for 20 minutes;
[0057] S5. Prepare the lower interface modification layer, transfer the substrate treated in S4 to a nitrogen glove box (the content of oxygen and water is less than 0.1ppm), then spin-coat PVP on the substrate, and then dry it on a hot stage at 150°C for 15 minutes ;
[0058] S6. Prepare a quasi-two-dimensional perovskite light-emitti...
Embodiment 2
[0063] S1, first perform standard cleaning on the silicon oxide substrate;
[0064] S2, preparing the anode bottom electrode, using an electron beam evaporation coating system and an evaporation mask to deposit 5nm of Cr and 150nm of Au successively on the silicon oxide wafer substrate after S1 treatment under high vacuum;
[0065] S3, using an oxygen plasma cleaning machine to clean the surface of the silicon oxide wafer after the bottom electrode is deposited in S2 for 5 minutes;
[0066] S4. Prepare a hole transport layer, spin-coat PEDOT:PSS on the substrate surface treated in S3, and then dry it on a hot stage at 140° C. for 20 minutes;
[0067] S5. Prepare the lower interface modification layer, transfer the substrate treated in S4 to a nitrogen glove box (the content of oxygen and water is less than 0.1ppm), then spin-coat PVP on the substrate, and then dry it on a hot stage at 150°C for 15 minutes ;
[0068] S6. Prepare a quasi-two-dimensional perovskite light-emitti...
Embodiment 3
[0073] S1, first perform standard cleaning on the silicon oxide substrate;
[0074] S2, preparing the anode bottom electrode, using an electron beam evaporation coating system and an evaporation mask to deposit 5nm of Cr and 150nm of Au successively on the silicon oxide wafer substrate after S1 treatment under high vacuum;
[0075] S3, using an oxygen plasma cleaning machine to clean the surface of the silicon oxide wafer after the bottom electrode is deposited in S2 for 5 minutes;
[0076] S4. Prepare a hole transport layer, spin-coat PEDOT:PSS on the substrate surface treated in S3, and then dry it on a hot stage at 140° C. for 20 minutes;
[0077] S5. Prepare the lower interface modification layer, transfer the substrate treated in S4 to a nitrogen glove box (the content of oxygen and water is less than 0.1ppm), then spin-coat PVP on the substrate, and then dry it on a hot stage at 150°C for 15 minutes ;
[0078] S6. Prepare a quasi-two-dimensional perovskite light-emitti...
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