A kind of preparation method of silicon-based light-emitting diode
A light-emitting diode, silicon-based technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of reducing device performance and long-term stability, high exciton luminescence quenching, leakage pinhole and perovskite Mineral ion migration, reducing the output light intensity and luminous efficiency of the device, etc., to reduce the leakage pinhole of the device, improve the luminous efficiency and long-term stability of the device, and facilitate large-scale preparation.
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Embodiment 1
[0051] S1, first perform standard cleaning on the silicon oxide substrate;
[0052] S2, preparing the anode bottom electrode, using an electron beam evaporation coating system and an evaporation mask to deposit 5nm of Cr and 150nm of Au successively on the silicon oxide wafer substrate after S1 treatment under high vacuum;
[0053] S3, using an oxygen plasma cleaning machine to clean the surface of the silicon oxide wafer after the bottom electrode is deposited in S2 for 5 minutes;
[0054] S4. Prepare a hole transport layer, spin-coat PEDOT:PSS on the substrate surface treated in S3, and then dry it on a hot stage at 140° C. for 20 minutes;
[0055] S5, prepare the lower interface modification layer, transfer the substrate treated in S4 to a nitrogen glove box, the content of oxygen and water in the nitrogen glove box is less than 0.1ppm, then spin-coat PVP on the substrate, and then bake on a hot stage at 150°C dry for 15 minutes;
[0056] S6. Prepare a quasi-two-dimension...
Embodiment 2
[0061] S1, first perform standard cleaning on the silicon oxide substrate;
[0062] S2, preparing the anode bottom electrode, using an electron beam evaporation coating system and an evaporation mask to deposit 5nm of Cr and 150nm of Au successively on the silicon oxide wafer substrate after S1 treatment under high vacuum;
[0063] S3, using an oxygen plasma cleaning machine to clean the surface of the silicon oxide wafer after the bottom electrode is deposited in S2 for 5 minutes;
[0064] S4. Prepare a hole transport layer, spin-coat PEDOT:PSS on the substrate surface treated in S3, and then dry it on a hot stage at 140° C. for 20 minutes;
[0065] S5, prepare the lower interface modification layer, transfer the substrate treated in S4 to a nitrogen glove box, the content of oxygen and water in the nitrogen glove box is less than 0.1ppm, then spin-coat PVP on the substrate, and then bake on a hot stage at 150°C dry for 15 minutes;
[0066] S6. Prepare a quasi-two-dimension...
Embodiment 3
[0071] S1, first perform standard cleaning on the silicon oxide substrate;
[0072] S2, preparing the anode bottom electrode, using an electron beam evaporation coating system and an evaporation mask to deposit 5nm of Cr and 150nm of Au successively on the silicon oxide wafer substrate after S1 treatment under high vacuum;
[0073] S3, using an oxygen plasma cleaning machine to clean the surface of the silicon oxide wafer after the bottom electrode is deposited in S2 for 5 minutes;
[0074] S4. Prepare a hole transport layer, spin-coat PEDOT:PSS on the substrate surface treated in S3, and then dry it on a hot stage at 140° C. for 20 minutes;
[0075] S5, prepare the lower interface modification layer, transfer the substrate treated in S4 to a nitrogen glove box, the content of oxygen and water in the nitrogen glove box is less than 0.1ppm, then spin-coat PVP on the substrate, and then bake on a hot stage at 150°C dry for 15 minutes;
[0076] S6. Prepare a quasi-two-dimension...
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