Nanometer soldering flux, preparation method thereof, device and welding method

Abstract

The invention discloses a nanometer soldering flux which comprises a protective agent, nanometer molybdenum carbide, nanometer copper powder and a solvent. The protective agent wraps the surface of the nanometer copper powder to form a protective agent layer, the nanometer molybdenum carbide is embedded in the protective agent layer of the nanometer copper powder, and the protective agent is used for protecting the nanometer copper powder from being oxidized. The invention further discloses a preparation method of the nanometer soldering flux. The invention further discloses a device which comprises a substrate and a chip, and the substrate and the chip are welded through a mixture of the nanometer soldering flux and a binding agent. The invention also discloses a welding method. The welding method comprises the following steps: applying the mixture of the nanometer soldering flux and the binding agent between the substrate and the chip, and pre-sintering for 5-120s at the pre-sintering temperature of 65-180 DEG C; and immediately increasing the temperature to the secondary sintering temperature for secondary sintering after pre-sintering is finished, wherein the secondary sintering temperature ranges from 250 DEG C to 320 DEG C, and the secondary sintering time ranges from 5 min to 30 min.

Description

technical field

[0001] The invention relates to the technical field of nanomaterials for electronic packaging and interconnection, in particular to nano flux and its preparation method, device and welding method. Background technique

[0002] With the commercial breakthrough of 5G communication technology, the performance requirements of electronic devices are also continuously improved, and higher requirements are put forward for device power and stability. Due to the third-generation semiconductor silicon carbide, gallium nitride has the advantages of high breakdown electric field strength, good thermal stability, and high carrier saturation drift speed. It has application advantages in high-power devices, and its maximum operating temperature can reach 600 ° C. And high stability in high temperature environment. Its working temperature poses a huge challenge to chip interconnection materials and processes, and it is urgent to develop a good interconnection material syste...

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