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Low-oxygen large-size aluminum-based intermetallic compound-containing alloy target material and preparation method thereof

An alloy target, large-scale technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problem of difficult to prepare sputtering alloy targets for semiconductors and difficult to prepare large-scale complete targets , difficult to make targets and other problems, to achieve the effect of eliminating the introduction of impurities, good compactness and low rejection rate

Active Publication Date: 2021-06-15
CHANGSHA HUAISHI NEW MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It makes it difficult for such alloys containing aluminum-based intermetallic compounds to make targets that meet the process requirements
[0004] In the prior art, the patent (application number: 201710046047.5) discloses a method for preparing aluminum-based alloys by the thermite reduction method, which is only suitable for preparing conventional master alloys due to quality reasons such as uniformity, content and impurities; the patent (application number: 201510185516.2) also discloses a rotating target and its preparation method. It uses an arc spraying method to prepare an alloy target. The alloy content is low, and its thickness is only 3 to 15 mm, and its density is 97%. The use is also limited; the patent (application number: 201610677045.1, 201910439319.7) adopt powder metallurgy method to prepare alloy target, which is inevitably prone to problems such as brittleness and high oxygen content; Severe segregation, coarse grains of secondary precipitates, etc., and because of its inherent brittleness, conventional pressure processing (hot rolling or hot forging) is difficult to produce large-sized complete targets
These methods have their own defects, and it is difficult to prepare low-oxygen and large-size aluminum-based intermetallic compound-containing semiconductor sputtering alloy targets.

Method used

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  • Low-oxygen large-size aluminum-based intermetallic compound-containing alloy target material and preparation method thereof
  • Low-oxygen large-size aluminum-based intermetallic compound-containing alloy target material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0037] The preparation process of an Al-10Ti alloy target is as follows:

[0038](1) The atomic ratio of aluminum to titanium is 9:1, the raw materials are high-purity aluminum and high-purity titanium, and its purity is ≥99.95%. During treatment, use 5% oxalic acid activation solution for surface activation treatment and wash and dry with alcohol;

[0039] (2) Billet preparation Put the prepared materials into the crucible, heat up to 500°C, and keep the temperature for 15 minutes. Then, the temperature was raised to 1350°C at 50°C / min (the melting point of Al-10Ti was about 1290°C), melted, stirred well and left for 10 minutes. Then poured into a mold with a controlled cooling rate and cooled to 600°C, and the cooling rate was controlled at 60°C / s. The crucible is a pollution-free crucible protected by a protective coating of boron nitride on the surface, and the coating does not react with the melt, thereby reducing unnecessary pollution caused by the crucible.

[0040] ...

Embodiment 2

[0048] A preparation process of an Al-10Sc alloy target is as follows:

[0049] (1) The atomic ratio of aluminum to scandium is 90:10, the raw materials are high-purity aluminum, high-purity scandium and additive X, and its purity is ≥99.9998%. When the high-purity metal is deoxygenated and impurity-removed, the surface is remelted and removed. Among them, the additive X is a scandium hydride substance, and the mass percentage of the total weight of the raw materials is 3%.

[0050] (2) Billet making Put the prepared materials into the crucible, heat up to 580°C, and keep the temperature for 5 minutes. Then, the temperature was raised to 1200°C at 50°C / min (the melting point of the Al-10Sc alloy is about 1100°C), melted and fully stirred, and then let stand for 20 minutes. Then, it was poured into a mold with a controlled cooling rate and cooled to 580°C, and the cooling rate was controlled at ~200°C / s. The crucible is a water-cooled copper crucible protected by a boron nitr...

Embodiment 3

[0056] The preparation process of an Al-15Cr alloy target is as follows:

[0057] (1) The atomic ratio of aluminum to scandium is 85:15, the raw materials are high-purity aluminum, high-purity chromium and additive X, and its purity is ≥99.98%. When the high-purity metal is deoxygenated and impurity-removed, it is surface-activated and treated with alcohol. Wash and dry; wherein the additive X is an Al-50Cr master alloy, and the mass percentage of the total weight of the raw materials is 6%.

[0058] (2) Billet making Put the prepared materials into the crucible, heat up to 480°C, and keep the temperature for 10 minutes. Then, the temperature was raised to 1050°C at 30°C / min (the melting point of the Al-15Cr alloy is about 980°C), melted and fully stirred, and then let stand for 15 minutes. Then it is poured into a mold with a controlled cooling rate and cooled to 560°C, and the cooling rate is controlled at ~200°C / s. The crucible is a water-cooled copper crucible protected ...

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Abstract

The invention discloses a low-oxygen large-size aluminum-based intermetallic compound-containing alloy target material and a preparation method thereof. The target material comprises aluminum and another high-melting-point metal M, M is any one of Ti, Ni, Cr or 17 rare earth metal elements, the atomic percent of M is 1%-50%, and the balance is aluminum metal. The preparation method comprises the processes of burdening, blank making, uniform-temperature treatment, post-treatment and the like, the alloy target material is finally prepared, the plane size of the alloy target material is not smaller than 10<4> square millimeters, the relative density is larger than 98%, the impurity oxygen content is smaller than 600 ppm, the total content of other impurities is smaller than 500 ppm, the average grain size is smaller than 150 microns, and the alloy target material can be widely used as a target material for semiconductor sputtering film forming.

Description

technical field [0001] The invention belongs to the technical field of aluminum-based alloy sputtering targets for semiconductors, and particularly relates to a low-oxygen and large-sized alloy target containing aluminum-based intermetallic compounds and a preparation method thereof. Background technique [0002] Sputtering targets are essential raw materials for VLSI fabrication. In the semiconductor preparation process, metals or alloys are required as sputtering targets. The high-energy ion beam generated by the ion source and formed by accelerated aggregation in high vacuum bombards the surface of the target, so that the atoms on the surface of the target leave the target and deposit on the surface of the target. substrate surface. Semiconductors have strict requirements on the purity of the metal or alloy material and the internal microstructure of the sputtering target. It is necessary to master the key technologies in the production process and go through long-term p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34B22D21/00C22C1/02C22C21/00
CPCC23C14/3414C23C14/3407C22C1/026C22C21/00B22D21/007Y02P10/20
Inventor 邱从章
Owner CHANGSHA HUAISHI NEW MATERIAL TECH CO LTD