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Polishing liquid for edge of large-size silicon wafer, preparation method of polishing liquid and polishing method

A large-size, polishing liquid technology, applied in the direction of polishing compositions containing abrasives, etc., to achieve the effect of increased mechanical action, low cost, and easy mass production

Active Publication Date: 2022-04-19
RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Patent 202010521251.X starts from the polishing process, and discloses a silicon wafer edge polishing liquid replacement system, liquid replenishment method and silicon wafer edge polishing method, which controls the pH value of the polishing liquid and adds liquid in time during the edge polishing process to maintain polishing performance stability, and does not involve the improvement of polishing liquid, preparation method of polishing liquid and polishing method

Method used

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preparation example Construction

[0034] The polishing liquid preparation method of the large-size silicon chip edge of the embodiment of the present invention comprises:

[0035] Step 1: pass the abrasive grains through an ion exchange column filled with ion exchange resin at a flow rate of 1-20 m / h to obtain modified abrasive grains, the abrasive grains are a colloidal solution with a pH value between 2-12 Among them, the colloidal particles of the colloidal solution are one or more of silicon oxide, cerium oxide, aluminum oxide, silicon carbide, and diamond, and the particle size distribution range is 10 to 2000 nm;

[0036] Step 2: Stir and mix the following components in weight percentage to obtain the polishing solution on the edge of the large-size silicon wafer:

[0037] Modified abrasive grains 5-50wt%;

[0038] Alkaline corrosive agent 0.1~10wt%;

[0039] Dispersant 0.01~1wt%;

[0040] Acidic substances 0.1-10wt%;

[0041] Surfactant 0.001~0.1wt%;

[0042] Deionized water balance.

[0043] The ...

Embodiment 1

[0053] Fill the ion exchange column with a hydroxyl type ion exchange resin with a height of 80 cm. The colloidal silica with a solid content of 50% and an average particle size of 1000 nm is passed through an ion exchange column filled with an ion exchange resin at a flow rate of 20 m / h to obtain modified hydroxy silica colloid. Under high-speed stirring, add 5% sodium hydroxide (alkaline corrosion agent), 0.1% hydroxypropyl methylcellulose (dispersant), 1 % of citric acid (acidic substance), 0.001% of fatty alcohol polyoxyethylene ether (AEO, surfactant), and continue to stir until uniform. Filter the prepared polishing solution, dilute it ten times and use it for edge polishing of 8-inch and 12-inch silicon wafers. The polishing experiment uses a self-made wheel-type ultrasonic-assisted edge polishing device, the ultrasonic vibration frequency is 0.1MHz, and the vibration mode is vertical vibration. The polishing pressure is 5kg, the rotational speed of the polishing head...

Embodiment 2

[0055] Fill the ion exchange column with mercapto ion exchange resin with a height of 80 cm. The cerium oxide colloid with a solid content of 20% and an average particle size of 2000 nm is passed through an ion exchange column filled with an ion exchange resin at a dynamic liquid velocity of 10 m / h to obtain a modified mercapto cerium oxide colloid. Under high-speed stirring, add 10% ethanolamine (alkaline corrosion agent), 0.1% guar gum (dispersant), 10% lactic acid (acidic substance), 0.05% octylphenol polyoxyethylene ether (OP-10, surfactant), continue to stir until uniform. Filter the prepared polishing solution, dilute it ten times and use it for edge polishing of 8-inch and 12-inch silicon wafers. The polishing experiment uses a self-made wheel-type ultrasonic-assisted edge polishing device, the ultrasonic vibration frequency is 0.2MHz, and the vibration mode is horizontal vibration. The polishing pressure is 5kg, the rotational speed of the polishing head is 800rpm, t...

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Abstract

The embodiment of the present invention discloses a polishing liquid for the edge of a large-sized silicon wafer, a preparation method of the polishing liquid and a polishing method. Corrosive agent 0.1-10 wt%; Dispersant 0.01-1 wt%; Acidic substance 0.1-10 wt%; Surfactant 0.001-0.1 wt%; Deionized water balance. The present invention utilizes ultrasonic vibration to assist in increasing the kinetic energy of particles in edge polishing, and increases the impact of abrasive grains in the horizontal or vertical direction on the basis of the cutting action of abrasive grains in traditional silicon edge polishing, thereby increasing the mechanical action in polishing and improving the Large-size silicon edge polishing efficiency; at the same time, in order to balance the chemical and mechanical effects and avoid defects caused by excessive mechanical effects, the present invention uses ion exchange resins to modify the surface of abrasive grains through ion exchange methods, combined with the control of polishing fluid formulations, quickly Get an ultra-smooth finish.

Description

technical field [0001] The invention relates to the technical field of silicon wafer processing, in particular to a polishing liquid for the edge of a large-sized silicon wafer, a preparation method of the polishing liquid and a polishing method. Background technique [0002] With the reduction of integrated circuit line width dimensions, the cost of wafer manufacturing is increasing day by day. Making more chips on a single silicon wafer is one way to reduce costs. Therefore, with the advancement of crystal growth technology, the size of silicon wafers can be made larger and larger. Since the area of ​​a silicon wafer is proportional to the square of its radius. The number of chips accommodated on a single large-size silicon wafer has been significantly increased. In addition, since chips cannot be manufactured at the edge of the silicon wafer, small-sized silicon wafers cause greater waste, and large-sized silicon wafers have a greater advantage in the number of chips p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02B24B1/04
CPCC09G1/02B24B1/04
Inventor 潘国顺陈高攀罗桂海罗海梅周艳潘立焱
Owner RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN
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