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Antimony selenide thin film with high (hk1) crystal face abundance, antimony selenide thin film solar cell and preparation method of antimony selenide thin film solar cell

A technology of solar cells and antimony selenide, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low efficiency and poor stability of antimony selenide thin-film solar cells, and is suitable for industrial production and application, and improves the crystal surface Abundance, the effect of reducing jumping between bands

Inactive Publication Date: 2021-06-22
RES & DEV INST OF NORTHWESTERN POLYTECHNICAL UNIV IN SHENZHEN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problems of low efficiency and poor stability in existing antimony selenide thin film solar cells, and provide a high (hk1) crystal plane abundance antimony selenide thin film, antimony selenide thin film solar cell Battery and its preparation method

Method used

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  • Antimony selenide thin film with high (hk1) crystal face abundance, antimony selenide thin film solar cell and preparation method of antimony selenide thin film solar cell
  • Antimony selenide thin film with high (hk1) crystal face abundance, antimony selenide thin film solar cell and preparation method of antimony selenide thin film solar cell
  • Antimony selenide thin film with high (hk1) crystal face abundance, antimony selenide thin film solar cell and preparation method of antimony selenide thin film solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] The specific preparation method of antimony selenide thin film solar cell is as follows:

[0052] 1) Use the existing deposition method to plate an ITO layer with a thickness of 150nm on the surface of the glass substrate or directly purchase a glass substrate coated with an ITO layer as the substrate;

[0053] 2) cleaning step 1) glass substrate coated with an ITO layer;

[0054] Use acetone, absolute ethanol, and deionized water to ultrasonically clean them in an ultrasonic cleaning machine for 20 minutes. Before changing the solvent, rinse with deionized water to remove the residue of the original solvent, and then clean the substrate with high pressure. Blow dry with nitrogen gas and place in a container covered with dust-free paper.

[0055] 3) Deposit SnO on the surface of the transparent conductive metal oxide layer by magnetron sputtering 2 The buffer layer;

[0056] 3.1) Fix the substrate cleaned in step 2) on the sample stage, put it into a vacuum chamber, ...

Embodiment 2

[0070] The difference with Example 1 is limited to: after the growth of the antimony selenide thin film in step 4), the antimony selenide thin film is cooled to room temperature with the furnace, the chamber is opened to take out the growth source of antimony selenide, the selenium source is put in, and the chamber is closed to draw Vacuum to 5 Pa, and then both the upper heating stage and the lower heating stage are heated to 350° C. for selenization annealing. The annealing time is 30 minutes, that is, the selenization annealing is performed on the antimony selenide thin film.

[0071] This embodiment has carried out selenization annealing to the grown antimony selenide thin film, and the X-ray diffraction pattern of antimony selenide thin film is shown in figure 2 In (c), SEM picture see image 3 In (b), the J-V spectrum of the antimony selenide thin film solar cell is shown in Figure 4 (c) in.

Embodiment 3

[0073] The difference from Example 1 is only: After the growth of the antimony selenide thin film in step 4), the temperature in the sublimation furnace chamber is lowered to room temperature, and then the temperature is raised to 350°C for in-situ annealing. The annealing time is 30 min, that is, the The antimony selenide film was annealed in situ.

[0074] In this embodiment, in-situ annealing is performed on the grown antimony selenide thin film, and the X-ray diffraction pattern of the antimony selenide thin film is shown in figure 2 In (b), SEM picture see image 3 In (a), the J-V spectrum of the antimony selenide thin film solar cell is shown in Figure 4 (b) in.

[0075] Embodiment 1~Example 3 can be seen, as image 3 Comparison of SEM surface morphology of antimony selenide thin film. It can be seen that the grain shape is sharper before annealing and there are a small amount of pores between the grains. These pores will hinder the transport of carriers and reduce ...

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Abstract

The invention provides an antimony selenide thin film with high (hk1) crystal face abundance, an antimony selenide thin film solar cell and a preparation method of the antimony selenide thin film solar cell. The problems that an existing antimony selenide thin film solar cell is low in efficiency and poor in stability are solved. A non-toxic buffer layer is adopted, the FTO / SnO2 / Sb2Se3 / Au thin-film solar cell or the ITO / SnO2 / Sb2Se3 / Au thin-film solar cell with the top lining structure is prepared, and a heat treatment process is adopted, so that the preferred growth orientation of the antimony selenide thin film [221] and [211] is enhanced, the (hk1) crystal face abundance is improved, the carrier transmission efficiency is promoted, and the device efficiency is improved. The non-toxic solar cell can be prepared in a large area, is pollution-free in the whole preparation process, and is suitable for industrial production and application.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic materials and devices, and in particular relates to an antimony selenide thin film with high (hk1) crystal plane abundance, an antimony selenide thin film solar cell and a preparation method thereof. Background technique [0002] With the continuous growth of the earth's population and the vigorous development of the social economy, the demand for energy is also increasing, and energy shortage has become a vital issue of concern to the world. The development and utilization of new energy sources have attracted much attention. Among many new energy sources, thin-film solar cells have always been a research hotspot in the energy field due to their low raw material consumption, light weight and flexibility, among which copper indium gallium selenide (CIGS) and telluride Cadmium (CdTe) has been successfully commercialized, but its own development is limited due to the high price of In and Ga ra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0392H01L31/0336H01L31/0445H01L31/072C23C14/00C23C14/06C23C14/08C23C14/35C23C14/58
CPCH01L31/18H01L31/1864H01L31/0392H01L31/0445H01L31/072H01L31/0336C23C14/35C23C14/086C23C14/0036C23C14/5806C23C14/0623Y02P70/50Y02E10/50
Inventor 孟庆岱魏登科李颖锐查钢强谭婷婷
Owner RES & DEV INST OF NORTHWESTERN POLYTECHNICAL UNIV IN SHENZHEN
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