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Boron-dipyrromethene derivative, preparation method thereof and photoelectric detector doped with boron-dipyrromethene derivative as donor

A fluoroboron dipyrrole and photodetector technology, applied in the field of optoelectronics, can solve the problems of complex preparation process, high price, environmental impact and the like

Active Publication Date: 2021-07-06
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its disclosed donor material (BODIPY) will use Pd(PPh 3 ) 4 As a catalyst, the use of this palladium catalyst will cause the following problems. First, the high price of noble metals such as palladium increases the cost of preparing fluoroboron dipyrrole and its derivative materials to a certain extent, and the palladium catalyst is a hazardous waste. , the recovery cost is high, and improper treatment will also cause adverse effects on the environment; secondly, because the palladium catalyst is very sensitive to oxygen, the control of oxygen in the preparation process must have strict requirements, and the preparation process is more complicated

Method used

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  • Boron-dipyrromethene derivative, preparation method thereof and photoelectric detector doped with boron-dipyrromethene derivative as donor
  • Boron-dipyrromethene derivative, preparation method thereof and photoelectric detector doped with boron-dipyrromethene derivative as donor
  • Boron-dipyrromethene derivative, preparation method thereof and photoelectric detector doped with boron-dipyrromethene derivative as donor

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Embodiment 1

[0035] Embodiment 1: the preparation method of fluoroboron dipyrrole derivatives

[0036] Preparation method of fluoroborate dipyrrole derivatives Synthetic route:

[0037]

[0038]The preparation method of fluoroborate dipyrrole derivatives specifically comprises the following steps: in compound 1, X is any one of dimethylamino (DN), anilino (TPN), and triphenylphosphoryl (TPP); compound 1 and Add acetylene to a 50mL two-necked flask under nitrogen protection; first add 10mL of 10% NaOH solution. Add 15 mL of ethanol to dissolve completely. React 8h to obtain compound 2; 0.27g of compound 2 and 5mL of diethylamine, 5mL of CH 3 NO 2 Sequentially added to a 50mL single-necked bottle, dissolved in 10mL of methanol. Compound 3 was obtained after reacting at 80°C for 12h. Dissolve 0.40 g of compound 3 and 5 g of ammonium acetate in 20 mL of n-butanol, and react at 70 °C for 12 h to obtain compound 4. Nitrogen protection. Dissolve 0.400 g of compound 4 and 5 mL of DIPEA i...

Embodiment 2

[0043] Embodiment 2: photodetector structure and preparation method

[0044] This embodiment takes one of the specific devices as an example to specifically illustrate the structure and preparation method of the active layer of the heterojunction broad-spectrum detector of the fluoroboron dipyrrole derivative.

[0045] The structural representation of the heterojunction type broad-spectrum detector of the fluoroboron dipyrrole derivatives of the present invention is as follows: figure 1 shown. It can be seen from the figure that the heterojunction broad-spectrum detector of the fluoroboron dipyrrole derivative is as follows from bottom to top: transparent conductive substrate 1, hole transport layer 2, active layer 3, electron transport layer 4 , electron buffer layer 5 and metal cathode 6. The heterojunction is adjacent to the hole transport layer and the electron transport layer; the device structure of this embodiment can be simply expressed as: Device 1: ITO / PEDOT:PSS / Pt...

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Abstract

The invention discloses a boron-dipyrromethene derivative, a preparation method thereof and a photoelectric detector doped with the boron-dipyrromethene derivative as a donor. Alkynyl is introduced into the boron-dipyrromethene derivative to serve as a P-type semiconductor material, and the derivative is sensitive to ultraviolet-visible-near infrared light. A bulk heterojunction in the broad-spectrum photoelectric detector comprises a P-type boron-dipyrromethene derivative and a traditional N-type fullerene material, and a hole transport layer PEDOT: PSS and transparent conductive substrate ITO glass are sequentially arranged on one side of an anode of a heterojunction film in a detector device. An electron transport layer C60, an electron buffer layer LiF and a metal back electrode Al are sequentially arranged on one side of the cathode of the heterojunction film. The broad-spectrum photoelectric detector is simple in device structure and manufacturing process, insensitive to temperature, high in responsivity and high in response speed, and has good application value in the fields of photoelectric communication and the like.

Description

technical field [0001] The invention belongs to the field of optoelectronics, and relates to a class of fluoroboron dipyrrole derivatives, a preparation method thereof and a photodetector using the same as a donor for doping. [0002] technical background [0003] In recent years, photodetectors (OPDs) have attracted attention in the fields of digital imaging technology, sensing, communication technology, and artificial intelligence because of their inherent mechanical flexibility, easy processing, good light sensing performance, and biocompatibility. widespread attention. Photodetectors in different wavelength regions have played an important role in various fields of optoelectronic technology. Therefore, the development of high-performance visible light photodetectors is of great significance to the development of science and technology. [0004] Commonly used photosensitive materials in photodetectors include inorganic materials and organic materials, etc., but most inor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F15/00H01L51/42H01L51/46
CPCC07F15/0086H10K85/346H10K30/30Y02E10/549Y02P70/50
Inventor 刘淑娟余波赵强陈曦黄维
Owner NANJING UNIV OF POSTS & TELECOMM
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