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YAlN/GaN double-barrier resonant tunneling diode containing InGaN sub-well structure and manufacturing method of YAlN/GaN double-barrier resonant tunneling diode

A resonant tunneling and double barrier technology, which is applied in the direction of diodes, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of increased peak voltage and power consumption of devices, uneven distribution of dislocations in active regions of devices, and ohmic contact of collectors. The problem of high resistance can reduce the peak voltage and power consumption of the device, realize the differential negative resistance effect of symmetrical characteristics, and reduce the width of the depletion region.

Active Publication Date: 2021-07-09
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] 4. The ohmic contact resistance of the collector is high, which increases the series resistance of the device, resulting in an increase in the peak voltage and power consumption of the device;
[0009] 5. Uneven distribution of dislocations in the active area of ​​the device leads to unstable device performance, low reliability, and device performance declines with increasing size, and poor performance consistency of devices of the same size

Method used

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  • YAlN/GaN double-barrier resonant tunneling diode containing InGaN sub-well structure and manufacturing method of YAlN/GaN double-barrier resonant tunneling diode
  • YAlN/GaN double-barrier resonant tunneling diode containing InGaN sub-well structure and manufacturing method of YAlN/GaN double-barrier resonant tunneling diode
  • YAlN/GaN double-barrier resonant tunneling diode containing InGaN sub-well structure and manufacturing method of YAlN/GaN double-barrier resonant tunneling diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Embodiment 1, on a self-supporting gallium nitride substrate, Y 0.11 Al 0.89 N barrier layer, In 0.04 Ga 0.96 YAlN / GaN double potential barrier resonant tunneling diode with N sub-quantum well layer.

[0064] Step 1, growing a GaN epitaxial layer, such as image 3 (a).

[0065] A GaN epitaxial layer with a thickness of 1500nm is grown on a self-supporting gallium nitride substrate by molecular beam epitaxy.

[0066] The process conditions used to grow the GaN epitaxial layer are: the temperature is 700°C, the equilibrium vapor pressure of the gallium beam is 8.0×10 - 7 Torr, the flow rate of nitrogen gas is 2.3sccm, and the power of the nitrogen plasma RF source is 375W.

[0067] Step two, grow n + GaN emitter ohmic contact layer, such as image 3 (b).

[0068] Using the molecular beam epitaxy method, the thickness of the GaN epitaxial layer is 100nm, and the doping concentration is 1x10 20 cm -3 the n + GaN emitter ohmic contact layer.

[0069] grow n + ...

Embodiment 2

[0145] Embodiment two, on the sapphire substrate, make and adopt Y 0.15 Al 0.85 N barrier layer and In 0.05 Ga 0.95 YAlN / GaN double barrier resonant tunneling diode of N sub quantum well.

[0146] Step 1, grow GaN epitaxial layer, such as image 3 (a).

[0147] Using the metal-organic chemical vapor deposition method, using the process conditions of temperature 1050°C, pressure 40Torr, ammonia flow rate 2000sccm, gallium source flow rate 120sccm, hydrogen flow rate 3000sccm, on a sapphire substrate, a thickness of 3000nm was grown. GaN epitaxial layer.

[0148] Step 2, grow n + GaN emitter ohmic contact layer, such as image 3 (b).

[0149] Using the molecular beam epitaxy method, the temperature is 720°C, and the equilibrium vapor pressure of the gallium beam is 8.5×10 -7 Torr, silicon beam equilibrium vapor pressure is 3.2×10 -8 Torr, the nitrogen flow rate is 2.3sccm, the nitrogen plasma RF source power is 375W, the thickness of the GaN epitaxial layer is 200nm, a...

Embodiment 3

[0192] Embodiment 3, on the silicon substrate, manufacture adopts Y 0.06 al 0.94 N barrier layer and and In 0.03 Ga 0.97 YAlN / GaN double potential barrier resonant tunneling diode with N sub-quantum well layer.

[0193] Step A, growing a GaN epitaxial layer, such as image 3 (a).

[0194] Set the temperature at 1100°C, the pressure at 40 Torr, the flow rate of ammonia gas at 2000 sccm, the flow rate of gallium source at 100 sccm, and the flow rate of hydrogen gas at 3000 sccm, and use the metal-organic chemical vapor deposition method to grow a GaN epitaxial layer with a thickness of 4000 nm on the Si substrate. .

[0195] Step B, grow n + GaN emitter ohmic contact layer, such as image 3 (b).

[0196] Set the temperature to 680°C, and the equilibrium vapor pressure of the gallium beam to 7.5×10 -7 Torr, silicon beam equilibrium vapor pressure is 3.0×10 -8 Torr, the flow rate of nitrogen gas is 2.3sccm, the power of the nitrogen plasma RF source is 375W, and the m...

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Abstract

The invention discloses a YAlN / GaN double-barrier resonant tunneling diode containing an InGaN sub-well structure and a manufacturing method of the YAlN / GaN double-barrier resonant tunneling diode. The YAlN / GaN double-barrier resonant tunneling diode mainly solves the problems that an existing GaN resonant tunneling diode is low in peak current, small in peak-valley current ratio and poor in performance consistency. The YAlN / GaN double-barrier resonant tunneling diode comprises a substrate, a GaN epitaxial layer, an n+GaN emitter ohmic contact layer, a GaN isolation layer, a first barrier layer, a second barrier layer, an InN isolation layer, an n+InN collector ohmic contact layer and a collector electrode from bottom to top, wherein a first GaN main quantum well layer, an InGaN sub-quantum well layer with 3%-5% of an In component and a second GaN main quantum well layer are sequentially arranged between the two barrier layers; and the Y component of each of the two barrier layers is 6%-15% of YAlN. The resonant tunneling diode is high in peak current, large in peak-valley current ratio and low in peak tunneling voltage, has a symmetrical characteristic differential negative resistance effect, and can be used for a high-frequency terahertz radiation source and a high-speed digital circuit.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a YAlN / GaN double-barrier resonant tunneling diode with an InGaN sub-well structure, which can be used for high-frequency terahertz radiation sources and high-speed digital circuits. Background technique [0002] Resonant tunneling diode is a quantum effect device, which has the characteristics of low junction capacitance, short carrier transport time, unipolar transport, differential negative resistance, etc. The oscillation source prepared based on resonant tunneling diode has high frequency and low Power consumption advantages, widely used in spectral imaging, high-speed wireless communication, security detection and circuit design. At present, mature resonant tunneling diodes are mainly based on GaAs and InP material systems, and the GaAs-based RTD terahertz oscillation source has achieved an output power of 1mW at 260GHz. Group III nitride material...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/88H01L29/06H01L29/12H01L29/20H01L29/205H01L29/36H01L29/45H01L21/329
CPCH01L29/882H01L29/0607H01L29/0684H01L29/122H01L29/2003H01L29/205H01L29/36H01L29/452H01L29/66219
Inventor 薛军帅刘芳郝跃张进成姚佳佳李蓝星孙志鹏张赫朋杨雪妍吴冠霖
Owner XIDIAN UNIV
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