Asymmetric aromatic diamine monomer containing terphenyl large substituent side groups and polyimidecontaining terphenyl large substituent side groups

A polyimide, aromatic diamine technology, applied in the preparation of amino compounds, the preparation of organic compounds, organic chemistry and other directions, can solve the problems of low molar polarizability, thermal stability and mechanical property loss, and achieve easy The effect of industrialization, easy purification and separation, and simple synthesis route

Pending Publication Date: 2021-08-20
CHANGZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

PI containing alicyclic substituents and fluorine-containing groups usually has the characteristics of low molar pola

Method used

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  • Asymmetric aromatic diamine monomer containing terphenyl large substituent side groups and polyimidecontaining terphenyl large substituent side groups
  • Asymmetric aromatic diamine monomer containing terphenyl large substituent side groups and polyimidecontaining terphenyl large substituent side groups
  • Asymmetric aromatic diamine monomer containing terphenyl large substituent side groups and polyimidecontaining terphenyl large substituent side groups

Examples

Experimental program
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Effect test

Example Embodiment

[0051] Example 1

[0052] (1) Preparation of an asymmetric aromatic diamine monomer containing tripartic benzene substrate

[0053] (a) under nitrogen protection, 19.76 g (8 mmol) of 2,4-dinitropyrphenylphenylphenyl, 24.1 g (88 mmol) of 3,5-diphenylbenzonic acid, 1.85 g (0.16 mmol) 4 ( Trobhenylphosphine) Palladium was added to 500 mL of three flasks, and a mixed solvent of 150 ml of volume ratio of 2: 1 toluene and ethylene glycol dimethyl ether and 120 ml of 1 mol / L of sodium carbonate solution were added, and the mixture was stirred at room temperature for half an hour. By 100 ° C reaction for 8 h, after the reaction was completed, it was filtered, dried and further recrystallized to give an intermediate compound 3,5- (diphenyl) phenyl-2,4-dinitrobenzene, yield of 91%. This yield is obtained by the ratio of the quality of the intermediate compound obtained from the actual intermediate compound quality and the theory.

[0054] (b) An addition of 18.82 g (0.05 mol) of an interm...

Example Embodiment

[0057] Example 2

[0058] (1) Preparation of aromatic diamine monomers containing tripartic benzene substrate

[0059] (a) Under nitrogen protection, 19.76 g (8 mmol) of 2,4-dinitropyrphenylphenylphenylphenyl, 24.1 g (88 mmol) of 3,5-diphenylphenyl boric acid, 2.10 g (0.18 mmol) of four ( Trobhenylphosphine) Palladium was added to 1000 mL of three flasks, and a mixed solvent of 320 ml of volume ratio of 4: 1 toluene and ethylene glycol dimethyl ether and a sodium carbonate solution of 240 ml of 2 mol / L was added. When the reaction was at 110 ° C, after the reaction, the reaction was filtered, dried, and further recrystallized to give an intermediate compound 3,5- (diphenyl) phenyl-2,4-dinitrobenzene, yield of 88%. This yield is obtained by the ratio of the quality of the intermediate compound obtained from the actual intermediate compound quality and the theory.

[0060] (b) In the three flask equipped with a stirrer, a spherical condensed tube was added to the three flasks of t...

Example Embodiment

[0063] Example 3

[0064] (1) Preparation of aromatic diamine monomers containing tripartic benzene substrate

[0065] (a) Under nitrogen protection, 14.82 g (6 mmol) of 2,4-dinitropyrobenzene, 18.09 g (66 mmol) of 3,5-diphenylphenyl boric acid, 1.39 g (0.13 mmol) 4 ( Trobenzylphosphine) palladium was added to 500 mL of three flasks, and a mixed solvent of 250 ml of volume ratio of 3: 1 toluene and ethylene glycol dimethyl ether and 150 ml of 2 mol / L of sodium carbonate solution were added. The mixture was stirred at room temperature for half an hour. By 100 ° C reaction 10 h, after the reaction, filtered, dried, and further recrystallized to give an intermediate compound 3,5- (diphenyl) phenyl-2,4-dinitrobenzene, yield of 89%. This yield is obtained by the ratio of the quality of the intermediate compound obtained from the actual intermediate compound quality and the theory.

[0066] (b) Add 10.16 g (0.03 mol) of an intermediate compound 3,5- (diphenyl) phenyl-2,4-dinitrobenzen...

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Abstract

The invention belongs to the field of high polymer materials, and relates to an asymmetric aromatic diamine monomer containing terphenyl large substituent side groups and polyimide containing terphenyl large substituent side groups. 2, 4-dinitrobromobenzene reacts with 3, 5-diphenyl phenylboronic acid according to a molar ratio under an alkaline condition to obtain an intermediate compound, and the intermediate, the dinitro compound is reduced through a reduction reaction to obtain the asymmetric aromatic diamine monomer 3, 5-(diphenyl) phenyl-2, 4-diaminobenzene containing the terphenyl large substituted structure. The diamine monomer and a commercial aromatic dianhydride monomer which are equal in substance amount are added into an organic solvent, the solution is stirred to react under the action of a catalyst, and settling, washing and drying are performed to obtain the fibrous asymmetric structure polyimide containing the terphenyl large substituted side groups. The solubility of the polyimide in a specific solvent can reach more than 30wt%, the polyimide has excellent film-forming property, and a prepared polymer film has potential application value in the field of microelectronics.

Description

technical field [0001] The invention belongs to the technical field of polymer materials, and in particular relates to a class of asymmetric aromatic diamine monomers and polyimides containing large terphenyl-substituted side groups. Background technique [0002] Polyimide (PI), as a widely used high-performance polymer material, has unique structural characteristics and excellent comprehensive properties. Functionalized PI films can be used in high-tech fields such as gas separation membranes, flexible optoelectronic device substrates, motor insulation, microelectronics manufacturing and packaging. With the rapid development of the microelectronics industry, the wire density of integrated circuits continues to increase, resulting in problems such as slow signal transmission and increased power loss. In order to solve this problem, it is necessary to require the insulating layer material of integrated circuits to have a lower dielectric The constant k (1.6 ~ 2.8), but the d...

Claims

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Application Information

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IPC IPC(8): C07C211/51C07C209/32C07C201/12C07C205/06C08G73/10C08J5/18C08L79/08
CPCC07C211/51C07C209/325C07C201/12C08G73/1071C08G73/1067C08G73/1007C08J5/18C08J2379/08C07C205/06
Inventor 汪称意郑慧陶正旺赵晓燕朱冠南华广洲李坚任强
Owner CHANGZHOU UNIV
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