An organic single crystal heterojunction composite film, its preparation method and application
A technology of heterojunction and composite film, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of high energy consumption and high production cost, and achieve simplified preparation process, improved performance and regular shape Effect
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Embodiment 1
[0097] A compound based on 2,8-difluoro-5,11-bis[2-(triethylsilyl)ethynyl]-anthracendithiophene (Dif-tes-adt) and 6,13-bis(triisopropane An organic single-crystal heterojunction composite film of 5,7,12,14-tetraazapentacene (Tips-tap) and an organic field-effect transistor based on the composite film, including The following steps:
[0098] (1) with heavily doped p + -Si / SiO 2 The substrate is the gate / gate insulating layer, where SiO 2 The thickness of the substrate is 300nm, and a 10nm thick cross-linked polystyrene (c-PS) is spin-coated on the substrate as a substrate modification layer;
[0099] (2) A single p-type semiconductor molecule Dif-tes-adt and an n-type semiconductor molecule Tips-tap were grown on the substrate deposited with Ag nanowires with a diameter of 40nm, and the shape of the organic single crystal film was judged under an optical microscope. Whether the appearance changes significantly when crossing the Ag nanowires, judge the growth interface types...
Embodiment 2
[0109] A compound based on 2,8-difluoro-5,11-bis[2-(triethylsilyl)ethynyl]-anthracendithiophene (Dif-tes-adt) and 6,13-bis(triisopropane An organic single-crystal heterojunction composite film of 5,7,12,14-tetraazapentacene (Tips-tap) and an organic field-effect transistor based on the composite film.
[0110] Refer to Example 1 for the preparation method of the field effect transistor device in Example 2, and the formula and process parameters are shown in Table 1 and Table 2. The morphology, structure and performance characterization methods are the same as those in Example 1. The obtained organic single crystal heterojunction morphology parameters are shown in Table 3. The obtained device properties are shown in Table 4.
Embodiment 3
[0112] A compound based on 2,8-difluoro-5,11-bis[2-(triethylsilyl)ethynyl]-anthracendithiophene (Dif-tes-adt) and 6,13-bis(triisopropane An organic single-crystal heterojunction composite film of 5,7,12,14-tetraazapentacene (Tips-tap) and an organic field-effect transistor based on the composite film.
[0113] Refer to Example 1 for the preparation method of the field effect transistor device of Example 3, and the formula and process parameters are shown in Table 1 and Table 2. The morphology, structure and performance characterization methods are the same as those in Example 1. The obtained organic single crystal heterojunction morphology parameters are shown in Table 3. The obtained device properties are shown in Table 4.
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