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Silicon carbide/graphene positive and negative electrode composite materials as well as preparation method and application thereof

A graphene negative electrode and composite material technology, which is applied in the direction of graphene, carbon compounds, chemical instruments and methods, etc., can solve complex problems such as the inability to prepare graphene in large areas, achieve high Fermi energy levels, and facilitate large-area Preparation and high mechanical properties

Active Publication Date: 2021-11-12
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Graphene is an ideal supercapacitor material. Because of its large specific surface area, high conductivity, and strong chemical stability, it has been widely concerned in recent years. The application of single-layer graphene to the field of supercapacitors has become a research hotspot in recent years. , graphene was first discovered in 2004, and was successfully separated by two British scientists for the first time through mechanical exfoliation, but this method cannot prepare graphene in a large area and is relatively complicated

Method used

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  • Silicon carbide/graphene positive and negative electrode composite materials as well as preparation method and application thereof
  • Silicon carbide/graphene positive and negative electrode composite materials as well as preparation method and application thereof
  • Silicon carbide/graphene positive and negative electrode composite materials as well as preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0068] A preparation method of silicon carbide / graphene negative electrode composite material, comprising the following steps:

[0069] Step 1: Preprocessing step

[0070] Firstly, the tantalum sheet is cleaned, then the polydimethylsiloxane solution is prepared and left to stand for use, and finally the static polydimethylsiloxane solution is evenly spread on the cleaned tantalum sheet, and then infrared baking, Let stand to make it solidify completely, obtain polydimethylsiloxane / tantalum sheet;

[0071] Specifically, the cleaning method is to grind the tantalum sheet with 70 mesh (212μm) coarse sand, and then use 220 mesh (68μm) fine sand to polish the tantalum sheet, and then use 99.7% alcohol to polish the tantalum sheet of 10mm*20mm*1mm Put it in an ultrasonic cleaning machine for ultrasonic cleaning for 10 minutes, then ultrasonically clean it with ultrapure water for 10 minutes, and then bake it under an infrared lamp for 5 minutes.

[0072] Specifically, the prepara...

Embodiment 2

[0085] A preparation method of silicon carbide / boron-doped graphene cathode composite material, comprising the following steps:

[0086] Step 1: a pretreatment step, the same as the method in step 1 in Example 1.

[0087] Step 2: Preparation of silicon carbide / boron-doped graphene cathode composite material by hot wire CVD, including the following steps:

[0088] 1) Open the chamber of the EA-HFCVD equipment, polish the inner wall of the chamber, polish the molybdenum stage of the sample deposition platform (φ60mm, thickness 5mm), and use a dust-free cloth (140mm*14 0mm*0.3mm) to dip in absolute ethanol (99.7%) Clean the polished molybdenum table and the inner surface of the chamber, and finally put the disassembled parts back in place. Cut 5 pieces of tantalum wire with a length of 18.5cm, hang the tantalum wire above the molybdenum table, place the polydimethylsiloxane / tantalum sheet obtained in step 1 in the middle of the molybdenum table, adjust the lifting table to conne...

Embodiment 3

[0099] A method for preparing a flexible water-based asymmetric capacitor, comprising the following steps:

[0100] Step 1: Electrode Preparation

[0101] The nickel foam (purity 99.8%, pore diameter 0.2-0.6mm, PPI 110, thickness 1mm) produced by Taiyuan Yingze Lizhiyuan Company was used in this experiment. Cut the nickel foam into a size of more than 1cm*3cm, take four pieces and put them into a 50mL beaker, add about 30mL to be diluted to 1 / 10 concentrated nitric acid solution to ensure that there is no nickel foam, and clean it in an ultrasonic cleaner for 10 minutes to remove nickel For the oxide layer on the surface of the foam, pour nitric acid into the waste liquid bucket, add ultrapure water, continue ultrasonication for 10 minutes, and then dry it under an infrared lamp;

[0102] The silicon carbide / graphene negative electrode composite material prepared in Example 1 and the silicon carbide / boron-doped graphene positive electrode composite material prepared in Exampl...

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Abstract

The invention discloses a silicon carbide / graphene negative electrode composite material, a silicon carbide / boron-doped graphene positive electrode composite material and preparation methods and application thereof. The preparation methods of the silicon carbide / graphene negative electrode composite material and the silicon carbide / boron-doped graphene positive electrode composite material are different from a traditional preparation process, and only polydimethylsiloxane is used as a carbon source and a silicon source. The silicon carbide / graphene negative electrode composite material and the silicon carbide / boron-doped graphene positive electrode composite material are directly prepared by utilizing a chemical vapor deposition method, the raw materials are easy to obtain, the operation is simple, the reliability is high, and large-area preparation is facilitated. According to the prepared silicon carbide / graphene negative electrode composite material and the silicon carbide / boron-doped graphene positive electrode composite material, graphite and boron graphene are introduced into a pure silicon carbide material, so that the capacitive performance is better, and a flexible water system asymmetric capacitor formed by assembling the silicon carbide / graphene negative electrode composite material and the silicon carbide / boron-doped graphene positive electrode composite material shows excellent energy storage performance.

Description

technical field [0001] The invention relates to the technical field of carbon material preparation and supercapacitors, in particular to a silicon carbide / graphene positive and negative electrode composite material and its preparation method and application. Background technique [0002] As a third-generation semiconductor material, SiC has the characteristics of wide band gap, high thermal conductivity, strong corrosion resistance, high saturation drift velocity of electrons, high critical breakdown electric field, low dielectric constant, and good chemical stability. Energy storage devices using SiC structures generally exhibit high power density characteristics. Therefore, SiC has broad application prospects in high-frequency, high-power, high-temperature-resistant, and radiation-resistant semiconductor energy storage devices. The preparation methods of SiC include organic polymer thermal decomposition method, mechanical method, chemical vapor deposition method, physical...

Claims

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Application Information

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IPC IPC(8): C01B32/977C01B32/184H01G11/24H01G11/30H01G11/36H01G11/44H01G11/84
CPCC01B32/977C01B32/184H01G11/24H01G11/30H01G11/36H01G11/44H01G11/84C01P2004/80C01P2004/04C01P2004/03C01P2004/01C01P2006/40Y02E60/13
Inventor 李明吉朱阔宜李红姬李翠平
Owner TIANJIN UNIVERSITY OF TECHNOLOGY