Copper etching solution and application thereof in wafer level packaging
A technology of copper etching and etching solution, which is applied in the field of etching solution, can solve the problems of lack of in-depth research and improvement on the uniformity of etching of large-sized wafers, and achieve the effect of reducing side etching and corrosion
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Embodiment 1
[0063] In terms of parts by mass, weigh the following components in parts by mass: 1 part of citric acid, 0.5 part of ammonium chloride, 0.1 part of 3,4,5-tricarboxylic aniline, 0.001 part of potassium lauroyl glycinate, 0.001 part of poly Ether modified silicone defoamer, 0.3 parts of hydroxyethylidene diphosphonic acid, 1 part of hydrogen peroxide, 99 parts
[0064] Deionized water, pH 2.72.
Embodiment 2-23
[0066] The formula of polyether modified silicone defoamer is shown in Table 1.
[0067] In embodiment 2-4, organic acid is citric acid (1.0-8.0 part), ammonium chloride (0.1-5.0 part), amine carboxyl compound is L-acridine-2-carboxylic acid (0.1-4.0 part), amide The surfactant is potassium lauroyl glycinate (0.001-1.0 parts), the organic phosphine compound is hydroxyethylidene diphosphonic acid (0.3-3.0 parts), hydrogen peroxide (1.0-10.0 parts) and water (70.0-99.0 parts ).
[0068] In embodiment 5-8, based on embodiment 1, difference is that organic acid is malic acid, tartaric acid, succinic acid, ferulic acid.
[0069] In Examples 9-12, based on Example 2, the difference is that the amine carboxyl compound is trans-1,2-cyclohexanediaminetetraacetic acid, (S)-(-)-N-(1-phenylethyl ) o-carboxybenzamide, 1-aminocyclopropanecarboxylic acid, 5-aminosalicylic acid.
[0070] In Examples 13-16, based on Example 3, the difference is that the amide surfactants are sodium lauroyl ...
Embodiment 2
[0072] In embodiment 21-22, based on embodiment 2, difference is the content of ammonium chloride.
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