Method for preparing large-size sapphire crystal and kyropoulos sapphire single crystal furnace used by same
A sapphire single crystal furnace and sapphire crystal technology, which is applied in the direction of seed crystal remaining in the molten liquid, crystal growth, single crystal growth, etc. during the growth period of use, can solve the problems of low quality, small size and poor performance of sapphire, and achieve purity High, small temperature gradient, uniform temperature effect
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Embodiment 1
[0064] Using 5N high-purity aluminum as the anode material of aluminum-air battery, through high-pressure twisting and cold rolling, it is made into nano-scale high-purity aluminum anode plate, which is used for load through electrochemical discharge of aluminum-air battery, and the discharge current density is 300mA / cm 2 . KNaAl 4 The mass fraction is 99.998% aluminum-air battery electrolyte (SiO 2 (OH) 2 2- , Ca 2+ , Zn 2+ , Mg 2+ The mass fraction of the sum is 0.002%). Raise the temperature of the electrolyte to 70°C, add excess calcium oxide, zirconium oxide and KNaAl to the electrolyte 4 The solution eventually forms calcium aluminate hydrate, SiO 2 (OH) 2 2- React on the surface of calcium aluminate hydrate to form hydrated garnet precipitates, and remove silicon impurities in the solution; then add an appropriate amount of sodium sulfide to the electrolyte to form zinc sulfide precipitates and remove zinc ions; finally add sodium oxalate to the electrolyte a...
Embodiment 2
[0067] Put 470kg of cake-shaped 5N nano-alumina with a particle size of 50nm into the iridium crucible of the single crystal furnace, fix the sapphire as the seed crystal on the seed rod of the pulling and rotating system of the single crystal furnace, and start the vacuum system to Vacuumize the single crystal furnace, when the vacuum in the single crystal furnace reaches 5×10 -7 Pa, and the change value of vacuum within half an hour is 10 -7 Pa, complete vacuuming.
[0068] Heating the iridium crucible to 2320°C through the tungsten heating body by increasing the voltage, the rate of increasing the voltage is 450mV / h, after heating at 2320°C for 6.5h, the temperature in the single crystal furnace is reduced to 2050 at the rate of falling voltage of 140mV / h ℃. The seed crystal is lowered by the seed rod at a rate of 20mm / h to 12mm below the melt level, and the descending time is 125min, and then the seed crystal is rotated by the seed rod at a rate of 5rad / min, when the len...
Embodiment 3
[0072] Put 520kg of cake-shaped 5N nano-alumina with a particle size of 50nm into the iridium crucible of the single crystal furnace, fix the sapphire as the seed crystal on the seed rod of the pulling and rotating system of the single crystal furnace, and start the vacuum system to Vacuumize the single crystal furnace, when the vacuum degree in the single crystal furnace reaches 7×10 -7 Pa, and the change value of vacuum within half an hour is 10 -8 Pa, complete vacuuming.
[0073] Heating the iridium crucible to 2380°C through the tungsten heating body by means of voltage increase, the rate of voltage increase is 550mV / h, after heating at 2380°C for 5 hours, the temperature in the single crystal furnace is reduced to 2080°C at a rate of drop voltage of 210mV / h . The seed crystal is lowered by the seed rod at a rate of 40mm / h to 21mm below the melt level, and the descending time is 145min, and then the seed crystal is rotated by the seed rod at a rate of 7rad / min, when the ...
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