A method of mixing rare earth materials in the growth of two -dimensional materials CVD

Abstract

The invention discloses a method for doping rare earth materials in the CVD growth of two-dimensional materials. The purpose of improving the performance of two-dimensional materials is achieved by doping rare earth elements in the process of growing two-dimensional materials. Specifically, it includes three main stages: the first stage is to prepare materials; the second stage is to place three powder sources, set the distance between the three powder sources, set the substrate material and WO 3 and Er 2 O 3 Vertical height between mixed powder sources; Erbium-doped WS grown using chemical vapor deposition in the third stage 2 (Er) two-dimensional material, in this stage, the heating rate of the three powder sources and the holding temperature of the three powder sources during the chemical reaction are set, and the gas flow rate is set.

Description

technical field [0001] The invention relates to the technical field of two-dimensional materials, and more particularly to a method for doping rare earth materials in the CVD growth of two-dimensional materials. Background technique [0002] In 2010, the Nobel Prize in Physics was awarded to Novoselov and Geim for the successful isolation of graphene, the first two-dimensional material with a thickness of a single atom in human history. Graphene has excellent mechanical, thermal, electrical and optical properties, which can play a powerful role in solar cells, supercapacitors, photodetectors, biological devices, gas sensors and other fields, and has broad application prospects. However, single-layer graphene is a gapless Dirac semimetal, which limits its application in electronic, optoelectronic and optical devices. [0003] In the process of graphene research, scientific researchers gradually expanded their horizons to other materials with similar structures to graphene, s...

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Problems solved by technology

[0004] However, since a large number of atomic defects are inevitably generated during the growth of two-dimensional materials, and the volume of two-dimensional materials is the surface, these surface defects have a more serious impact on the photoelectric properties of two-dimensional materials, resulting in transition metals The quantum efficiency and carrier mobility of chalcogenide two-dimensional materials are low, and the photoelectric response time is generally long (ms level), etc., which limit their application in high-speed detection.

[0005] Therefore, it is an urgent problem for those skilled in the art to provide a method for doping rare earth materials in the CVD growth of two-dimensional materials to solve the application limitations of transition metal chalcogenide two-dimensional materials.

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