Carbon-hertz film and application thereof
A technology of carbon hertzian film and insulating substrate, which is applied in carbon hertzian film and its application field, can solve the problems of narrow application area, and achieve the effect of wide application area, good material stability, and favorable promotion
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Embodiment 1
[0034] In this example, an artificial mica board (the reference linear expansion coefficient is about 50-80*10^-7K^-1) is used as an insulating substrate, and a convective heating element with double-sided heat dissipation is prepared according to the carbon Hertzian film formula provided by the present invention.
[0035] In this embodiment, the preparation materials of the carbon Hertzian film include, in parts by weight,
[0036] Lead oxide (PbO) 26.0 parts, lithium oxide (Li 2O) 29.8 parts, zinc oxide (ZnO) 18.0 parts, natural flake graphite powder (C) 28 parts, boron oxide (B 2 o 3 ) 0.9 parts, chromium oxide (Cr 2 o 3 ) 0.03 parts, iron oxide (Fe 2 o 3 )0.08 parts, vanadium oxide (V 2 o 5 ) 0.01 part.
[0037] The preparation process of the carbon Hertzian film and the convection heating element with double-sided heat dissipation includes the following:
[0038] (1) Prepare relevant chemical raw materials according to the formula of the carbon Hertzian film prov...
Embodiment 2
[0045] In this embodiment, a glass-ceramic plate (with a linear expansion coefficient of 7-11*10^-7K^-1) is used as an insulating substrate, and a single-sided radiation infrared element is prepared according to the carbon Hertzian film formula provided by the present invention.
[0046] In this embodiment, the preparation materials of the carbon Hertzian film include, in parts by weight,
[0047] Lead oxide (PbO) 23.0 parts, lithium oxide (Li 2 O) 27.8 parts, zinc oxide (ZnO) 16.5 parts, natural flake graphite powder (C) 35 parts, boron oxide (B 2 o 3 ) 0.3 parts, chromium oxide (Cr 2 o 3 ) 0.02 parts, iron oxide (Fe 2 o 3 ) 0.06 parts, and, vanadium oxide (V 2 o 5 )0.01 copies;
[0048] The carbon Hertzian film preparation and single-sided radiation infrared element preparation process include the following:
[0049] (1) Prepare relevant chemical raw materials according to the formula of the carbon Hertzian film provided in Example 2, and make a mixed dry powder thr...
Embodiment 3
[0056] In this embodiment, a tempered glass plate (tempered glass, adopting ordinary soda-lime flat glass (coefficient of linear expansion is 90-100*10^-7K^-1) is heat-treated to form internal stress, so that its heat resistance is improved ) is an insulating substrate, and a low-temperature single-sided radiation infrared element is prepared according to the carbon Hertzian film formula provided by the present invention.
[0057] In this embodiment, the preparation materials of the carbon Hertzian film include:
[0058] Lead oxide (PbO) 31.0 parts, lithium oxide (Li 2 O) 35.0 parts, zinc oxide (ZnO) 26.0 parts, natural flake graphite powder (C) 23 parts, boron oxide (B 2 o 3 ) 1.6 parts, chromium oxide (Cr 2 o 3 ) 0.06 parts, iron oxide (Fe 2 o 3 ) 0.10 parts, and vanadium oxide (V 2 o 5 ) 0 copies.
[0059] The carbon hertz film preparation and the preparation process of the low-temperature single-sided radiation infrared element include the following:
[0060] (1)...
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Abstract
Description
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Application Information

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