Diamond/metal-matrix composite material as well as preparation method and application thereof

A composite material, diamond technology, applied in the field of diamond/metal matrix composite material and its preparation, can solve the problems of poor thermal stability, poor affinity, cracks in diamond, etc.

Active Publication Date: 2021-12-17
CENT SOUTH UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, although the thermal conductivity of diamond particles used in the prior art is high at room temperature, the thermal stability at high temperatures

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Preparation of diamond reinforcement

[0037] Using single crystal diamond particles as the raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. 4 :H 2 =2:98, the number of growths is 2 times, each growth time is 20min, and finally a polycrystalline diamond transition layer with a thickness of 400nm is obtained.

[0038] Then use hot wire chemical vapor deposition to grow a doped diamond shell layer on the surface of the polycrystalline diamond transition layer to obtain a diamond reinforcement. Deposition process parameters: hot wire distance 10mm, hot wire thickness 0.5mm, growth temperature 850°C, deposition pressure 3KPa, diamond film thickness 2μm obtained by controlling the deposition time; during the chemical vapor deposition, the mass flow ratio of the passing gas is CH 4 :H 2 :B 2 h 6 =2:97:1, the growth pressure is 3Kpa, and the number of growths is 2 times. For each gr...

Embodiment 2

[0043] Preparation of diamond reinforcement

[0044] Using single crystal diamond particles as the raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. 4 :H 2 =2:98, the number of growths is 2 times, each growth time is 20min, and finally a polycrystalline diamond transition layer with a thickness of 400nm is obtained.

[0045] Then use hot wire chemical vapor deposition to grow a doped diamond shell layer on the surface of the polycrystalline diamond transition layer to obtain a diamond reinforcement. Deposition process parameters: hot wire distance 10mm, hot wire thickness 0.5mm, growth temperature 850°C, deposition pressure 3KPa, diamond film thickness 3μm obtained by controlling the deposition time; during the chemical vapor deposition, the growth deposition is divided into three stages, the first During deposition, the mass flow ratio of the gas introduced is: CH 4 :H 2 :B 2 h 6...

Embodiment 3

[0050] Preparation of diamond reinforcement

[0051] Using single crystal diamond particles as the raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. 4 :H 2 =2:98, the number of growths is 2 times, each growth time is 20min, and finally a polycrystalline diamond transition layer with a thickness of 400nm is obtained.

[0052] Then use hot wire chemical vapor deposition to grow a doped diamond shell layer on the surface of the polycrystalline diamond transition layer to obtain a diamond reinforcement. Deposition process parameters: hot wire distance 10mm, hot wire thickness 0.5mm, growth temperature 850°C, deposition pressure 3KPa, diamond film thickness 2μm obtained by controlling the deposition time; during the chemical vapor deposition, the mass flow ratio of the passing gas is CH 4 :H 2 :B 2 h 6 =2:97:1, the growth pressure is 3Kpa, and the number of growths is 2 times. For each ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thermal conductivityaaaaaaaaaa
Thermal expansion coefficientaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method and application of a diamond/metal-matrix composite material. The high-thermal-conductivity diamond/metal-matrix composite material comprises a diamond reinforcement body and a metal-based material, wherein the diamond reinforcement body comprises diamond and a diamond surface modification layer, the diamond surface modification layer sequentially comprises a diamond transition layer and a diamond-doped shell layer from inside to outside. According to the preparation method, a gas pressure assisted infiltration process technology is adopted, high-purity gas serves as a pressure source and acts on the surface of a molten liquid metal matrix, and high-density compounding of the diamond and the metal-matrix material is achieved; and the preparation method can effectively overcome capillary force in the permeation process, realizes high-pressure seepage forming, and enables the material to be high in heat conductivity coefficient, adjustable in thermal expansion coefficient, better in uniformity and higher in reliability.

Description

technical field [0001] The invention belongs to the field of composite materials, and in particular relates to a diamond / metal matrix composite material and its preparation method and application. Background technique [0002] With the rapid development of science and technology, the power and integration of electronic equipment used in many fields such as aerospace, military, industry, and national production are getting higher and higher. The problem of heat dissipation has become an important factor restricting the development of these industries. Especially with the advent of the 5G communication era, the integration of electronic and semi-finished devices has increased geometrically, which has led to a rapid increase in the heat density of electronic devices. Studies have shown that for every 10°C increase in the temperature of electronic components, the failure rate increases by about 1%. In addition, 55% of the failures in electronic equipment are caused by the high t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B28/14C30B29/04C23C16/27B22D23/04H01L23/29
CPCC30B28/14C30B29/04C23C16/271B22D23/04C23C16/279C23C16/278H01L23/29
Inventor 魏秋平周科朝马莉黄开塘李俊
Owner CENT SOUTH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap