Ga2O3 metal oxide semiconductor field effect transistor and preparation method thereof
A technology of oxide semiconductors and field effect transistors, which is applied in the field of microelectronics, can solve the problems of difficulty in practical application, low breakdown voltage, process difficulty and high manufacturing cost, so as to suppress the peak electric field intensity of the channel, increase the threshold voltage, Effect of smoothing channel electric field distribution
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Embodiment 1
[0032] Example 1, in Fe-doped β-Ga 2 o 3 The gate dielectric layer is made on the semi-insulating substrate, and the upper and lower layers are high-k dielectric layers, and the middle layer is Al 2 o 3 / Au / Al 2 o 3 Ga with three-layer structure and charge storage layer length of 10 μm 2 o 3 MOSFET devices.
[0033] Step 1, for Fe-doped β-Ga 2 o 3 Semi-insulating substrates undergo standard cleaning such as figure 2 (a).
[0034] will grow with UIDβ-Ga 2 o 3 Fe-doped β-Ga 2 o 3 Semi-insulating substrate, put it in 50ml of acetone and ultrasonically clean it for 5min at 80W power;
[0035] Then use 50ml of ethanol and deionized water to sonicate at 80W for 1min, and finally blow dry with high-purity nitrogen.
[0036] Step 2, grow n-type β-Ga on the buffer layer by molecular beam epitaxy 2 o 3 epitaxial layer, such as figure 2 (b).
[0037] Put the sample that has completed the standard cleaning into the MBE equipment, and heat and evaporate Ga metal with a...
Embodiment 2
[0057] Example 2, in Mg-doped β-Ga 2 o 3 A five-layer Al gate dielectric layer in which high-k dielectric layers and charge storage layers are alternately stacked on a semi-insulating substrate 2 o 3 / Ni / Al 2 o 3 / Ni / Al 2 o 3 , and the Ni lengths of the upper and lower charge storage layers are 5 μm and 10 μm respectively. 2 o 3 MOSFET devices.
[0058] Step 1, Mg-doped β-Ga 2 o 3 Semi-insulating substrates undergo standard cleaning such as figure 2 (a).
[0059] The specific implementation of this step is the same as step 1 of Embodiment 1.
[0060] Step 2, grow n-type β-Ga on the buffer layer by molecular beam epitaxy 2 o 3 epitaxial layer, such as figure 2 (b).
[0061] 2.1) Put the sample that has completed the standard cleaning into the MBE equipment, heat and evaporate Ga metal with a purity of 99.9999% and SnO with a purity of 99.99% in a K chamber at 760°C 2 Powder to provide Ga element and Sn element, using 5% ozone and 95% oxygen mixture as the so...
Embodiment 3
[0083] Example 3, in Fe-doped β-Ga 2 o 3 Fabricate a seven-layer structure gate dielectric layer HfO with alternately stacked high-k dielectric layers and charge storage layers on a semi-insulating substrate 2 / Pt / HfO 2 / Pt / HfO 2 / Pt / HfO 2 , and the length of the charge storage layer Pt from bottom to top is 10 μm, 5 μm and 2.5 μm Ga 2 o 3 MOSFET devices.
[0084] Step A, for Fe-doped β-Ga 2 o 3 Semi-insulating substrates undergo standard cleaning such as figure 2 (a).
[0085] The specific implementation of this step is the same as step 1 of Embodiment 1.
[0086] Step B, growing n-type β-Ga on the buffer layer by molecular beam epitaxy 2 o 3 epitaxial layer, such as figure 2 (b).
[0087] B1) Put the sample that has completed the standard cleaning into the MBE equipment, heat and evaporate Ga metal with a purity of 99.9999% and SnO with a purity of 99.99% in a K chamber at 860°C 2 Powder to provide Ga element and Sn element, using 5% ozone and 95% oxygen mi...
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