Metal oxide-perovskite interface treatment method and battery
A treatment method and oxide technology, which is applied in the field of solar cells, can solve the problems of complex process, difficult to meet large-scale promotion and application, and high cost, and achieve the effect of improving device stability and photoelectric conversion efficiency
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[0066] In the present invention, the preparation method of the battery preferably includes:
[0067] Drying the substrate after cleaning;
[0068] preparing a metal oxide film on the dried substrate surface;
[0069] Soaking the metal oxide film in a silane solution after plasma treatment;
[0070] Drying and heat-treating the soaked metal oxide film;
[0071] Preparing a perovskite film on the surface of the heat-treated metal oxide film;
[0072] An electron transport layer and / or a hole transport layer are prepared on the surface of the perovskite thin film.
[0073] In the present invention, the cleaning method preferably includes:
[0074] Wash with ethanol, isopropanol and acetone in sequence.
[0075] In the present invention, the cleaning time is preferably 20-40 minutes, more preferably 25-35 minutes, and most preferably 30 minutes.
[0076] In the present invention, the drying method is preferably blowing with a nitrogen gun.
[0077] In the present invention,...
Embodiment 1
[0126] Wash 4*4cm FTO film (glass thickness 2mm, FTO film thickness 100nm) glass with ethanol, isopropanol (IPA) and acetone for 30 minutes respectively, and blow dry with nitrogen gun.
[0127] A layer of dense NiO was sputtered on the surface of FTO thin film glass by magnetron sputtering x Thin film (thickness 20nm, x≤1), sputtering power is 80W, 30min.
[0128] The above-sputtered film was treated with oxygen plasma for 10 min at a power of 2 kW.
[0129] 10 μL of acetic acid, 1 mg of 3-aminopropyltrimethoxysilane and 100 mL of deionized water were mixed together and stirred for 30 minutes to form a homogeneous solution.
[0130] The film after the above oxygen plasma treatment was vertically or NiO x Put it face up in the above-prepared solution, soak at room temperature (26°C) for 70min; then rinse off the surface liquid with deionized water and dry it with a nitrogen gun; then place the substrate on a hot stage at 80°C for 60min.
[0131] Weigh 600mg lead iodide (PbI...
Embodiment 2
[0136] Wash 1.5*1.5cm indium tin oxide (ITO) (glass thickness 2mm, ITO film thickness 150nm) glass with ethanol, isopropanol (IPA) and acetone for 30 minutes respectively, and blow dry with nitrogen gun.
[0137] Tin dioxide (SnO 2 ) stock solution and ultrapure water according to the volume ratio of 1:5 diluted, fully stirred to obtain SnO 2 Precursor solution; take 50 μL SnO 2 The precursor solution was evenly spread on the surface of the ITO conductive glass, and the parameters of the homogenizer were set to 4000rpm / s, and the time was 30s; then placed on a hot stage at 150°C for 30min to obtain SnO 2 Thin film (30nm).
[0138] The above-prepared SnO 2 The film was treated for 30 minutes in an ultraviolet ozone cleaner (Shanghai Cairong Economic and Trade Development Co., Ltd., UV-O3 / 70N) for subsequent spin coating.
[0139] 10 μL of acetic acid, 0.5 mg of 3-aminopropyltrimethoxysilane and 100 mL of deionized water were mixed together and stirred for 30 minutes to form...
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