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Metal oxide-perovskite interface treatment method and battery

A treatment method and oxide technology, which is applied in the field of solar cells, can solve the problems of complex process, difficult to meet large-scale promotion and application, and high cost, and achieve the effect of improving device stability and photoelectric conversion efficiency

Pending Publication Date: 2022-01-11
HUANENG NEW ENERGY CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the passivation method adopted in the prior art has high cost and complicated process, and it is difficult to meet the large-scale popularization and application.

Method used

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  • Metal oxide-perovskite interface treatment method and battery
  • Metal oxide-perovskite interface treatment method and battery
  • Metal oxide-perovskite interface treatment method and battery

Examples

Experimental program
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preparation example Construction

[0066] In the present invention, the preparation method of the battery preferably includes:

[0067] Drying the substrate after cleaning;

[0068] preparing a metal oxide film on the dried substrate surface;

[0069] Soaking the metal oxide film in a silane solution after plasma treatment;

[0070] Drying and heat-treating the soaked metal oxide film;

[0071] Preparing a perovskite film on the surface of the heat-treated metal oxide film;

[0072] An electron transport layer and / or a hole transport layer are prepared on the surface of the perovskite thin film.

[0073] In the present invention, the cleaning method preferably includes:

[0074] Wash with ethanol, isopropanol and acetone in sequence.

[0075] In the present invention, the cleaning time is preferably 20-40 minutes, more preferably 25-35 minutes, and most preferably 30 minutes.

[0076] In the present invention, the drying method is preferably blowing with a nitrogen gun.

[0077] In the present invention,...

Embodiment 1

[0126] Wash 4*4cm FTO film (glass thickness 2mm, FTO film thickness 100nm) glass with ethanol, isopropanol (IPA) and acetone for 30 minutes respectively, and blow dry with nitrogen gun.

[0127] A layer of dense NiO was sputtered on the surface of FTO thin film glass by magnetron sputtering x Thin film (thickness 20nm, x≤1), sputtering power is 80W, 30min.

[0128] The above-sputtered film was treated with oxygen plasma for 10 min at a power of 2 kW.

[0129] 10 μL of acetic acid, 1 mg of 3-aminopropyltrimethoxysilane and 100 mL of deionized water were mixed together and stirred for 30 minutes to form a homogeneous solution.

[0130] The film after the above oxygen plasma treatment was vertically or NiO x Put it face up in the above-prepared solution, soak at room temperature (26°C) for 70min; then rinse off the surface liquid with deionized water and dry it with a nitrogen gun; then place the substrate on a hot stage at 80°C for 60min.

[0131] Weigh 600mg lead iodide (PbI...

Embodiment 2

[0136] Wash 1.5*1.5cm indium tin oxide (ITO) (glass thickness 2mm, ITO film thickness 150nm) glass with ethanol, isopropanol (IPA) and acetone for 30 minutes respectively, and blow dry with nitrogen gun.

[0137] Tin dioxide (SnO 2 ) stock solution and ultrapure water according to the volume ratio of 1:5 diluted, fully stirred to obtain SnO 2 Precursor solution; take 50 μL SnO 2 The precursor solution was evenly spread on the surface of the ITO conductive glass, and the parameters of the homogenizer were set to 4000rpm / s, and the time was 30s; then placed on a hot stage at 150°C for 30min to obtain SnO 2 Thin film (30nm).

[0138] The above-prepared SnO 2 The film was treated for 30 minutes in an ultraviolet ozone cleaner (Shanghai Cairong Economic and Trade Development Co., Ltd., UV-O3 / 70N) for subsequent spin coating.

[0139] 10 μL of acetic acid, 0.5 mg of 3-aminopropyltrimethoxysilane and 100 mL of deionized water were mixed together and stirred for 30 minutes to form...

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Abstract

The invention provides a metal oxide-perovskite interface treatment method, which comprises the following steps: impregnating a metal oxide in a silane solution to obtain an impregnated product; and carrying out heat treatment on the impregnated product. According to the invention, the uniformly covered primary amine molecular layer is formed on the surface of the metal oxide, on one hand, non-uniformly distributed active groups on the surface of the metal oxide are removed, and a layer of primary amine molecules is uniformly covered to form a primary amination layer; on the other hand, the formed primary amine layer can induce uniform nucleation growth of perovskite on the surface of the substrate and form a passivation layer, and meanwhile, ion migration is blocked; and the photoelectric conversion efficiency and the device stability of the perovskite solar cell device processed by the process are improved. The invention also provides a battery.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a method for processing a metal oxide-perovskite interface and a battery. Background technique [0002] With the development of organic-inorganic hybrid perovskite solar cells, the improvement of device efficiency and the stability of solar cells are the most important factors to curb its commercialization. The current perovskite is an ionic crystal, and its common composition is iodide ion (I - ), lead ions (Pb + ), methylamine ion (MA + ), etc. These ions are easy to combine with oxygen and water molecules in the air during the preparation process and device service process to produce polarization reactions, resulting in the loss of photoelectric conversion efficiency and stability of the battery. In organic-inorganic hybrid perovskite cells, oxide carrier transport layers (electron transport layer and hole transport layer) are often located at both ends of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/44H01L51/42
CPCH10K30/88H10K30/00Y02E10/549
Inventor 肖平赵政晶赵志国赵东明秦校军蔡子贺刘云刘家梁李芳富冯笑丹
Owner HUANENG NEW ENERGY CO LTD
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