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Photoelectric immunosensor based on silicon nanowire array@polydopamine composite structure and preparation method

A silicon nanowire array and immunosensor technology, applied in the field of biosensors, can solve the problems of poor device stability and repeatability, cumbersome photoelectric immune electrode construction steps, affecting the detection sensitivity of sensors, etc., so as to improve the photocurrent response, Increase the photocurrent response and improve the effect of photocurrent

Pending Publication Date: 2022-02-01
UNIV OF SHANGHAI FOR SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Photoactive substances are the basis for building sensors, and their photoelectric conversion efficiency will directly affect the intensity of the photocurrent, thereby affecting the detection sensitivity of the sensor. By loading other materials on the top of the photoelectrode, the photocurrent can be further improved, but it also makes the The electrode structure is more complicated and the stability is reduced; in addition, it is necessary to provide a bio-friendly interface for the immobilization of probe antibodies, so the construction steps of the entire photoelectric immune electrode are more cumbersome, resulting in poor stability and reproducibility of the device Therefore, there is a need for a photoelectric immunosensor with high photoelectric conversion efficiency, simple electrode structure, and reliable performance of photoelectric active materials.

Method used

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  • Photoelectric immunosensor based on silicon nanowire array@polydopamine composite structure and preparation method
  • Photoelectric immunosensor based on silicon nanowire array@polydopamine composite structure and preparation method
  • Photoelectric immunosensor based on silicon nanowire array@polydopamine composite structure and preparation method

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preparation example Construction

[0032] A method for preparing a photoelectric immunosensor based on a silicon nanowire array@polydopamine composite structure, comprising the following steps:

[0033] S1. To prepare the silicon nanowire array electrode, cut the silicon wafer into a suitable size, clean it and face it up, put it into a container with an etching solution, etch it at a temperature of 15-45°C for 0.5-6h, and finally, place the The etched silicon nanowire array is rinsed and dried to obtain a silicon nanowire array electrode;

[0034]S2. Put the silicon nanowire array electrode prepared in step S1 into the prepared mixed solution and stir for 0.5-24 hours to obtain a polydopamine-wrapped silicon nanowire array, take out the silicon nanowire array electrode, wash it, and then blow it dry. Prepare silicon nanowire array@PDA electrode;

[0035] S3. Immerse the silicon nanowire array@PDA electrode prepared in step S2 in the antibody solution for 0.5-24h, take out the silicon nanowire array@PDA electr...

Embodiment 1

[0045] Polydopamine modified silicon nanowire arrays to construct photoelectric immunosensors, the specific steps are as follows:

[0046] (1) Etching silicon nanowire arrays on the surface of an n-type silicon wafer with a crystal plane type of : First, the silicon wafer is sequentially treated with acetone, absolute ethanol, deionized water, piranha solution, and water ultrasonic treatment , the ultrasonic treatment is ultrasonic cleaning three times in acetone, absolute ethanol, and deionized water cleaning solution, each time for 10 minutes, and ultrasonic cleaning in the piranha solution cleaning solution once for 30 minutes; then, the silicon wafer after cleaning is polished on the surface Put it into a container containing No. 1 etching solution for 1 minute, then take out the above-mentioned silicon wafer, put it into a container containing No. 2 etching solution, etch for 1 hour, and finally, the etched silicon wafer Rinse the sheet, dry it with nitrogen gas, and prep...

Embodiment 2

[0054] 1. The SiNWs@PDA electrode prepared in Example 1 is used as the working electrode, the platinum sheet and the silver chloride electrode are respectively the counter electrode and the reference electrode, 0.1M PBS is used as the electrolyte, the applied voltage is 1V, and the xenon lamp (power 150W, The power density is 100mW / cm2) as the light source, record the transient current curve, the result is as follows Figure 4 (a);

[0055] 2. The mouse cTnI monoclonal antibody / SiNWs@PDA electrode prepared in Example 1 was used as the working electrode, the platinum sheet and the silver chloride electrode were respectively the counter electrode and the reference electrode, 0.1M PBS was used as the electrolyte, and the applied voltage was 1V, xenon lamp (power is 150W, power density is 100mW / cm2) is light source, record transient current curve, the result is as follows Figure 4 (b);

[0056] 3. The BSA / mouse cTnI monoclonal antibody / SiNWs@PDA electrode prepared in Example 1 ...

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Abstract

The invention discloses a photoelectric immunosensor based on a silicon nanowire array@polydopamine composite structure and a preparation method. The composite structure is characterized in that the surface of a silicon nanowire array is coated with polydopamine. The invention also discloses an application of the sensor in photoelectric immunodetection of a myocardial infarction biomarker-troponin. The silicon nanowire array has excellent photoelectric conversion performance; the polydopamine has high biocompatibility, and the surface of the polydopamine has abundant amino functional groups, so that the polydopamine is easy to modify. The composite structure is obtained by combining the two materials. According to the photoelectric immunosensor, the structural complexity of the photoelectric immunosensor is effectively reduced, the stability and sensitivity of immunosensing are improved, and the photoelectric immunosensor is used for detecting cardiac troponin I and is high in sensitivity and good in specificity.

Description

technical field [0001] The invention relates to the technical field of biosensors, in particular to a photoelectric immune sensor based on a silicon nanowire array@polydopamine composite structure and a preparation method. Background technique [0002] Photoelectric immunosensing is a new type of sensing technology developed by combining the photoelectric conversion process with the recognition of biological macromolecules. In the sensor detection process, the light source is used as the excitation source to excite the photoactive substance, and the electrical signal is output as the detection signal. , using two different forms of signal for excitation and detection, this technique has the advantage of low background signal and therefore higher sensitivity. In photoimmunoassay, steric hindrance effect has become an important signal amplification strategy. Most biomolecules such as protein molecules have poor conductivity, so when the target molecules (mainly protein molecu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/327G01N27/26G01N33/543G01N33/68C08G73/06
CPCG01N27/3278G01N27/26G01N33/5438G01N33/54386G01N33/6887C08G73/0672
Inventor 李慧珺何斌直士博黄粤夷郭小瑜王现英王丁
Owner UNIV OF SHANGHAI FOR SCI & TECH
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