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Cadmium sulfide-sulfur indium zinc heterojunction nanorod array composite material and preparation method thereof

A technology of cadmium sulfide nanorods and nanorod arrays, which is applied in electrodes, electrolytic processes, electrolytic components, etc., can solve the problems of low utilization rate of photogenerated holes, high preparation cost of noble metals, unfavorable industrial production, etc., and improve the utilization of atoms High efficiency, strong photoelectric conversion performance, and enhanced electron directional migration effect

Pending Publication Date: 2022-02-08
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method uses noble metals for high preparation costs and low economic benefits, which is not conducive to industrial production; and the products produced by this method only use the photogenerated electrons of sulfur indium zinc to reduce water to produce hydrogen, and the utilization rate of photogenerated holes is not high, and the product is economical. not tall

Method used

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  • Cadmium sulfide-sulfur indium zinc heterojunction nanorod array composite material and preparation method thereof
  • Cadmium sulfide-sulfur indium zinc heterojunction nanorod array composite material and preparation method thereof
  • Cadmium sulfide-sulfur indium zinc heterojunction nanorod array composite material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0041] (1) Pretreatment of FTO: FTO was ultrasonically cleaned with acetone, isopropanol and water mixed solution (volume ratio 1:1:1), and deionized water for 60 min and 15 min, respectively, and dried at 60 °C for later use.

[0042] (2) Weigh 148.0mg of cadmium nitrate, 36.5mg of thiourea and 34.9mg of reduced cysteine ​​(molar ratio is 1:1:0.6) and dissolve them in 20mL of deionized water, then transfer to a polytetrafluoroethylene reactor , lean the FTO against the polytetrafluoroethylene liner wall of the reactor at a certain angle, and keep the conductive side facing down. React at 160°C for 1 h, then raise the temperature to 180°C for 2.5 h, after the reaction, cool to room temperature, take out the sample, rinse twice with deionized water and ethanol, and dry in vacuum at 60°C to obtain cadmium sulfide nano rod array.

[0043] (3) Dissolve 152.8mg indium nitrate, 60.0mg zinc nitrate and 60.0mg thioacetamide (molar ratio 1:2:4) in 5mL glycerin and 15mL N,N-dimethylfor...

Embodiment 2

[0047] (1) Pretreatment of FTO: FTO was ultrasonically cleaned with acetone, isopropanol and water mixed solution (volume ratio 1:1:1), and deionized water for 60 min and 15 min, respectively, and dried at 60 °C for later use.

[0048] (2) Weigh 148.0mg of cadmium nitrate, 36.5mg of thiourea and 34.9mg of reduced cysteine ​​(molar ratio is 1:1:0.6) and dissolve them in 20mL of deionized water, then transfer to a polytetrafluoroethylene reactor , lean the FTO against the polytetrafluoroethylene liner wall of the reactor at a certain angle, and keep the conductive side facing down. React at 160°C for 1 h, then raise the temperature to 180°C for 2.5 h, after the reaction, cool to room temperature, take out the sample, rinse twice with deionized water and ethanol, and dry in vacuum at 60°C to obtain cadmium sulfide nano rod array.

[0049] (3) Dissolve 152.8 mg indium nitrate, 27.3 mg zinc chloride and 60.0 mg thioacetamide (molar ratio 1:2:4) in 5 mL glycerol and 15 mL N,N-dimet...

Embodiment 3

[0053] (1) Pretreatment of FTO: FTO was ultrasonically cleaned with acetone, isopropanol and water mixed solution (volume ratio 1:1:1), and deionized water for 60 min and 15 min, respectively, and dried at 60 °C for later use.

[0054] (2) Weigh 148.0mg of cadmium nitrate, 36.5mg of thiourea and 34.9mg of reduced cysteine ​​(molar ratio is 1:1:0.6) and dissolve them in 20mL of deionized water, then transfer to a polytetrafluoroethylene reactor , lean the FTO against the polytetrafluoroethylene liner wall of the reactor at a certain angle, and keep the conductive side facing down. React at 160°C for 1 h, then raise the temperature to 180°C for 2.5 h, after the reaction, cool to room temperature, take out the sample, rinse twice with deionized water and ethanol, and dry in vacuum at 60°C to obtain cadmium sulfide nano rod array.

[0055] (3) Dissolve 117.3mg of indium chloride, 27.3mg of zinc chloride and 60.0mg of thioacetamide (molar ratio 1:2:4) in 5mL of glycerol and 15mL o...

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Abstract

The invention discloses a cadmium sulfide-sulfur indium zinc heterojunction nanorod array composite material and a preparation method thereof, and belongs to the technical field of inorganic photoelectric materials. The method comprises the following steps: firstly, hydrothermally growing a cadmium sulfide nanorod array on pretreated FTO conductive glass, and then epitaxially growing a sulfur indium zinc nanosheet on the surface of cadmium sulfide by a solvothermal method to form the cadmium sulfide-sulfur indium zinc heterojunction nanorod array composite material. By controlling an indium source precursor and a zinc source precursor, sulfur indium zinc with different morphologies grows on the surface of the cadmium sulfide nanorod. The method disclosed by the invention is simple and easy to implement and good in repeatability, and the grown cadmium sulfide nanorod array is tidy and uniform in arrangement. Due to the formation of the cadmium sulfide-indium zinc sulfide heterojunction, active sites are increased, the separation of photon-generated carriers is accelerated, the photoelectric property and the stability of the cadmium sulfide nano array material are further improved, and the cadmium sulfide nano array material can be applied to the field of photoelectrocatalysis.

Description

technical field [0001] The invention belongs to the technical field of inorganic photoelectric materials, and in particular relates to a cadmium sulfide-sulfur indium zinc heterojunction nanorod array composite material and a preparation method thereof. [0002] technical background [0003] The development and application of semiconductor photocatalytic technology is of great significance for solving the global energy shortage and environmental pollution problems by converting solar energy into chemical fuels. Cadmium sulfide is a visible light-responsive photocatalyst with a band gap of 2.4 eV and good absorption of visible light shorter than 516 nm. In addition, cadmium sulfide has good carrier transport ability, which can make photogenerated electrons and holes move in time and effectively, prolong the life of photogenerated carriers, and produce high photocatalytic activity. It is the most prominent among various solar photocatalysts. One of semiconductor photocatalysts...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/091C25B1/04C25B1/55
CPCC25B11/091C25B1/04C25B1/55Y02E60/36
Inventor 冯苗郭海江
Owner FUZHOU UNIV
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