Method for growing pure-phase Ga2O3 film on sapphire substrate and solar-blind ultraviolet detector

Abstract

The invention relates to the technical field of semiconductor materials, and particularly discloses a method for growing a pure-phase Ga2O3 film on a sapphire substrate and a solar-blind ultraviolet detector, the method comprises the following steps: depositing on the sapphire substrate through a magnetron sputtering method to obtain the pure-phase Ga2O3 film, and magnetron sputtering parameters are as follows: the temperature of the substrate is 500-800 DEG C; the sapphire substrate is selected from any one or more of sapphire wafers with orientations of (0006), (300) and (012); the solar-blind ultraviolet detector disclosed in the invention comprises the sapphire substrate and a pure-phase Ga2O3 film epitaxially grown on the surface of the sapphire substrate. The method has the advantages that the pure-phase Ga2O3 film can grow on the sapphire substrate, and the device requirement is met.

Description

technical field [0001] This application relates to the technical field of semiconductor materials, more specifically, it relates to a kind of sapphire substrate growth pure phase Ga 2 o 3 Thin-film methods and solar-blind UV detectors. Background technique [0002] The solar-blind ultraviolet detector is not affected by the sunlight background, and can work around the clock. It has the characteristics of high sensitivity and low false alarm rate. The advantages of ultraviolet light detection devices based on wide bandgap semiconductor materials are mainly reflected in small size, light weight, high gain, fast response, low noise, shock resistance, vibration resistance, and no influence of magnetic fields, etc., especially suitable for equipment integration. [0003] To realize the detection of solar-blind ultraviolet light, it is required that the core semiconductor material of the device has a forbidden band width greater than 4.4 eV (corresponding to the detection wavele...

AI Technical Summary

Problems solved by technology

However, Ga grown based on the above techniques 2 o 3 Thin film materials often contain other crystal forms or distorted structures, so they are all polycrystalline or non-pure phase crystals

[0006] Although a buffer layer α-Fe was inserted between the epitaxial film and the substrate 2 o 3 Afterwards, phase-pure α-Ga can be grown on the base layer of the buffer layer 2 o 3 film, but the growth thickness of the buffer layer is difficult to control, and the growth conditions are different from those of α-Ga 2 o 3 It is not the same, if the growth of the buffer layer is completed in the same reaction chamber at the same time, it will also cause pollution to the target

[0007] Relatively speaking, the direct epitaxial growth of pure phase α-Ga on sapphire substrate 2 o 3 The study of thin films is of great significance to this field, but because α-Ga 2 o 3 It is a thermodynamically metastable phase, which will be transformed into a β-phase crystal under certain conditions, which leads to the successful growth of α-Ga on the current sapphire substrate. 2 o 3 Thin films, but most of them have a mixed phase structure, the purity is very low, and it is difficult to meet the research and development needs of devices

Images