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High-power LED and preparation method thereof

A high-power, growth-rate technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of imperfect design of LED quantum wells and electron blocking layers, uneven distribution of carriers, and low hole injection efficiency. Achieve the effect of realizing large-scale production applications, reducing the strength of the polarization electric field, and increasing the effective barrier height

Pending Publication Date: 2022-04-29
宜兴曲荣光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the luminous efficiency of LED has surpassed that of fluorescent lamps and incandescent lamps, the luminous efficiency of commercial LEDs is still lower than that of sodium lamps (150lm / W), and the price per lumen / watt is relatively high.
However, at present, the high defect density, strong spontaneous and piezoelectric polarization of III-nitride materials lead to serious non-radiative recombination, and the design of LED quantum wells and electron blocking layers is not perfect, these factors lead to electron leakage, void Hole injection efficiency is low, carrier distribution is uneven, so there is room for further improvement in LED luminous efficiency and external quantum efficiency

Method used

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Embodiment 1

[0024] In the above S1, the AlN buffer layer was grown by physical vapor deposition method, the growth temperature was 400° C., and the thickness of the AlN buffer layer was found to be 5 nm.

[0025] In the above S2, the InGaN buffer layer was grown on the inventive AlN buffer layer by metal-organic chemical vapor deposition, the reaction chamber pressure was 50 torr, the growth temperature was 1000°C, the beam current ratio V / III was 3000, and the growth rate was 2 μm / h.

[0026] In the above S3, the non-doped InGaN layer was grown on the inventive InGaN buffer layer by metal-organic chemical vapor deposition. The rate is 2 μm / h.

[0027] In the above S4, the n-type doped InGaN layer is grown on the non-doped InGaN layer by metal-organic chemical vapor deposition method. The process conditions are: the reaction chamber pressure is 50 torr, the growth temperature is 1000 °C, and the beam current ratio V / III is 3000, the growth rate is 2μm / h; the invention n-type doped InGaN ...

Embodiment 2

[0032] In the above S1, the AlN buffer layer was grown by physical vapor deposition method, the growth temperature was 450° C., and the thickness of the AlN buffer layer was found to be 27 nm.

[0033] In the above S2, the InGaN buffer layer was grown on the inventive AlN buffer layer by metal-organic chemical vapor deposition, the reaction chamber pressure was 175torr, the growth temperature was 1130°C, the beam current ratio V / III was 4000, and the growth rate was 3μm / h.

[0034] In the above S3, the non-doped InGaN layer was grown on the inventive InGaN buffer layer by metal-organic chemical vapor deposition. The rate is 3 μm / h.

[0035] In the above S4, the n-type doped InGaN layer was grown on the non-doped InGaN layer by the metal organic chemical vapor deposition method. The process conditions were: the reaction chamber pressure was 175torr, the growth temperature was 1130°C, and the beam current ratio V / III was 4000, the growth rate is 3μm / h; the invention n-type dope...

Embodiment 3

[0040] In the above S1, the AlN buffer layer was grown by physical vapor deposition method, the growth temperature was 500° C., and the thickness of the AlN buffer layer was found to be 50 nm.

[0041] In the above S2, the InGaN buffer layer was grown on the inventive AlN buffer layer by metal-organic chemical vapor deposition, the reaction chamber pressure was 300 torr, the growth temperature was 1260°C, the beam current ratio V / III was 5000, and the growth rate was 4 μm / h.

[0042] In the above S3, the non-doped InGaN layer was grown on the inventive InGaN buffer layer by metal-organic chemical vapor deposition. The rate is 4 μm / h.

[0043] In the above S4, the n-type doped InGaN layer is grown on the non-doped InGaN layer by the metal organic chemical vapor deposition method. The process conditions are: the reaction chamber pressure is 300torr, the growth temperature is 1260°C, and the beam current ratio V / III is 5000, the growth rate is 4μm / h; the n-type doped InGaN layer...

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Abstract

The invention discloses a high-power LED and a preparation method thereof, and relates to the field of semiconductor illumination, the high-power LED comprises a silicon carbide substrate, one side of the silicon carbide substrate is provided with an AlN buffer layer, one side of the AlN buffer layer is provided with an InGaN buffer layer, one side of the InGaN buffer layer is provided with a non-doped InGaN layer, an n-type doped InGaN layer, an InGaN / GaN multi-quantum well layer, an In component gradient zigzag electron barrier layer and a p-type doped GaN film. The GaN-based blue light LED is prepared by taking silicon carbide as the substrate of the LED, the In component gradually-changed zigzag electron blocking layer is adopted, the electron and hole concentration of the LED adopting the zigzag electron blocking layer is higher than that of an LED adopting a conventional single-component electron blocking layer, and the carrier concentration distribution is relatively uniform; and the leakage of electrons can be effectively reduced, and the injection of holes is increased, so that the recombination rate of current carriers is improved, and the optical performance of the LED is improved.

Description

technical field [0001] The invention relates to the field of semiconductor lighting, in particular to a high-power LED and a preparation method thereof. Background technique [0002] Group III nitride GaN has extremely excellent properties in electricity, optics and acoustics, and has attracted extensive attention in recent years. GaN is a direct bandgap material with fast acoustic wave transmission, good chemical and thermal stability, high thermal conductivity, low thermal expansion coefficient, and high breakdown dielectric strength. It is an ideal material for manufacturing high-efficiency semiconductor devices, such as LED devices. At present, the luminous efficiency of GaN-based LEDs has reached 28% and is still increasing, which is much higher than that of incandescent lamps (about 2%) or fluorescent lamps (about 10%) and other lighting methods commonly used today. Luminous efficiency. [0003] If LEDs are to be widely used on a large scale, it is necessary to furth...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/06H01L33/12H01L33/00
CPCH01L33/145H01L33/06H01L33/12H01L33/007
Inventor 高芳亮
Owner 宜兴曲荣光电科技有限公司
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