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Photo-cured silicon carbide ceramic slurry as well as preparation method and application thereof

A technology of silicon carbide ceramics and light curing, applied in the field of 3D printing ceramics, can solve the problems of large difference in refractive index between silicon carbide powder and photosensitive resin, high solid phase content of silicon carbide ceramics, high absorption rate of silicon carbide powder, etc. , to achieve the effect of improving light curing ability, excellent mechanical properties and good fluidity

Inactive Publication Date: 2022-05-06
SHENZHEN POLYTECHNIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The embodiment of the present invention provides a light-cured silicon carbide ceramic slurry and its preparation method and application. The problem of large refractive index difference between the powder and the photosensitive resin also makes the silicon carbide ceramics obtained by 3D printing with the light-cured silicon carbide ceramic slurry have a high solid phase content in the ceramic

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  • Photo-cured silicon carbide ceramic slurry as well as preparation method and application thereof
  • Photo-cured silicon carbide ceramic slurry as well as preparation method and application thereof
  • Photo-cured silicon carbide ceramic slurry as well as preparation method and application thereof

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preparation example Construction

[0038] Such as figure 1 As shown, the embodiment of the present invention provides a method for preparing a light-cured silicon carbide ceramic slurry, the preparation method comprising the following steps:

[0039] (1) modifying the silicon carbide powder to obtain a modified silicon carbide powder whose surface is coated with silicon dioxide;

[0040] (2) The modified silicon carbide powder, photosensitive resin and dispersant are mixed and then ball milled to obtain the photocured silicon carbide ceramic slurry; wherein, the modified silicon carbide powder is prepared in the photocured The mass fraction in the silicon carbide ceramic slurry is 70-72% (for example, it may be 70%, 70.5%, 71%, 71.5% or 72%).

[0041] In the present invention, by modifying the silicon carbide powder, the surface of the modified silicon carbide powder is coated with a small amount of SiO 2 , and then reduce its ultraviolet absorption, so that more ultraviolet light can be irradiated on the pho...

Embodiment 1

[0085] Preparation of light-cured silicon carbide ceramic slurry:

[0086] (1) Put silicon carbide powder (10 μm in particle size) in a high-temperature sintering furnace and raise the temperature to 900°C at a heating rate of 5°C / min. After holding for 0.5h, it is directly cooled with the furnace to obtain a surface coated with silicon dioxide. Modified silicon carbide powder;

[0087] (2) Select ditrimethylolpropane acrylate as the prepolymer, 1,6-hexanediol diacrylate as the diluent, and mix the prepolymer and the diluent uniformly at a mass ratio of 1:1, Then add the photoinitiator TPO (being (2,4,6-trimethylbenzoyl) diphenyl phosphorus oxide) of 2wt% (relative to the total mass of prepolymer and diluent), mix by magnetic stirrer Uniformly, the photosensitive resin is prepared;

[0088] Put 35g of modified silicon carbide powder obtained in step (1), 13.95g of photosensitive resin and 1.05g of dispersant BYK-103 in a ball mill jar, and at a speed of 150rpm, first rotate ...

Embodiment 2

[0093] Embodiment 2 is basically the same as Embodiment 1, and its difference is:

[0094] In the preparation process of light-cured silicon carbide ceramic slurry, the dispersant is KOS110, specifically:

[0095] In step (2), 35g of modified silicon carbide powder obtained in step (1), 13.25g of photosensitive resin and 1.75g ​​of dispersant KOS110 were placed in a ball mill jar and rotated forward for 30min at a speed of 150rpm, Stay for 4 minutes, then reverse rotation for 30 minutes, and stay for 4 minutes. After a total of 3 hours of ball milling, the light-cured silicon carbide ceramic slurry (viscosity is 1052.31mPa·s) is obtained;

[0096] Wherein, the mass fraction of the modified silicon carbide powder in the light-cured silicon carbide ceramic slurry is 70%; the mass of the dispersant is 5 wt% of the mass of the modified silicon carbide powder.

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Abstract

The invention provides light-cured silicon carbide ceramic slurry and a preparation method and application thereof, and the preparation method comprises the following steps: (1) carrying out modification treatment on silicon carbide powder to obtain modified silicon carbide powder coated with silicon dioxide on the surface; and (2) mixing the modified silicon carbide powder, photosensitive resin and a dispersing agent, and carrying out ball milling treatment to obtain the light-cured silicon carbide ceramic slurry, wherein the mass fraction of the modified silicon carbide powder in the light-cured silicon carbide ceramic slurry is 70-72%. The prepared photocuring silicon carbide ceramic slurry is good in fluidity and high in curing capacity, 3D printing of a high-solid-content silicon carbide ceramic green body is achieved, and a guarantee is provided for the mechanical property of the silicon carbide ceramic green body after degreasing and sintering. The method realizes printing of silicon carbide with a complex structure, and has the advantages of high forming precision, high speed and capability of manufacturing a silicon carbide ceramic component with a complex shape without a mold.

Description

technical field [0001] The invention relates to the technical field of 3D printing ceramics, in particular to a light-cured silicon carbide ceramic slurry and its preparation method and application. Background technique [0002] Silicon carbide ceramics have excellent properties such as stable chemical properties, high thermal conductivity, small thermal expansion coefficient, high hardness, good wear resistance and corrosion resistance, high temperature strength, small creep, and thermal shock resistance, so they are widely used in petroleum, chemical, and Machinery, aerospace, electronics, nuclear industry and other fields, especially in harsh environments such as high temperature and corrosion. At present, the traditional preparation methods of silicon carbide materials include compression molding, pressureless sintering, hot pressing sintering, hot isostatic pressing sintering, reaction sintering, gel injection molding, and precursor cracking. Due to the hard and brittl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/622C04B35/632C04B35/634
CPCC04B35/565C04B35/622C04B35/6346C04B35/632C04B2235/6562C04B2235/6567
Inventor 叶高林周鹏焦翼飞张如炳
Owner SHENZHEN POLYTECHNIC
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