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D15-mode ferroelectric single crystal film piezoelectric vibration sensor and preparation method thereof

A ferroelectric single crystal, piezoelectric vibration technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., can solve problems affecting voltage output, corresponding sensitivity and device performance, and achieve improved Effect of voltage output and sensitivity, low performance drop in low temperature environment, and high electromechanical conversion efficiency

Pending Publication Date: 2022-06-24
ZHONGBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most cantilever vibration sensors usually use a d of the upper and lower electrodes 31 mode, while the piezoelectric coefficient d 31 Smaller, which in turn affects the output voltage, corresponding sensitivity and device performance

Method used

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  • D15-mode ferroelectric single crystal film piezoelectric vibration sensor and preparation method thereof
  • D15-mode ferroelectric single crystal film piezoelectric vibration sensor and preparation method thereof
  • D15-mode ferroelectric single crystal film piezoelectric vibration sensor and preparation method thereof

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preparation example Construction

[0028] The embodiments of the present application provide a d 15 The preparation method of the mode ferroelectric single crystal thin film piezoelectric vibration sensor comprises the following steps:

[0029] S1: respectively cleaning the lithium niobate wafer and the silicon substrate, depositing a silicon dioxide layer on the surface of the silicon substrate by plasma enhanced chemical vapor deposition, and magnetron sputtering the bottom electrode on the surface of the silicon dioxide layer;

[0030] S2: bonding the lithium niobate wafer with the silicon substrate, and then performing thinning, chemical mechanical polishing and cleaning in sequence to obtain a lithium niobate single crystal thin film;

[0031] S3: use magnetron sputtering and ion beam etching processes to prepare alignment marks, and then use magnetron sputtering and stripping processes to prepare surface electrodes in the developing pattern area;

[0032] S4: The lithium niobate single crystal thin film ...

Embodiment 1

[0052] Step 1. Prepare a lithium niobate single crystal thin film with a bottom electrode / silicon dioxide layer / silicon as the base. The specific method is as follows:

[0053] a. The lithium niobate wafer and the silicon substrate are respectively ultrasonicated with acetone, isoacetone, absolute ethanol and deionized water for 5 minutes respectively, rinsed with deionized water, and dried with nitrogen to remove organic matter and impurities on the surface;

[0054] b using plasma enhanced chemical vapor deposition to grow a 2μm silicon dioxide layer on a silicon substrate;

[0055] c Magnetron sputtering bottom electrode on the surface of the silicon dioxide layer, the power of the magnetron sputtering equipment is 500W, 20nm metal chromium is sputtered on the surface of the silicon dioxide layer as the adhesion layer, and 200nm gold is used as the bottom electrode to obtain a The process side of the direct bonding process;

[0056] d Repeat step (a) to clean the silicon s...

Embodiment 2

[0078] Step 1. Prepare a lithium niobate single crystal thin film with a bottom electrode / silicon dioxide layer / silicon as the base. The specific method is as follows:

[0079] a. The lithium niobate wafer and the silicon substrate are respectively ultrasonicated with acetone, isoacetone, absolute ethanol and deionized water for 5 minutes respectively, rinsed with deionized water, and dried with nitrogen to remove organic matter and impurities on the surface;

[0080] b using plasma enhanced chemical vapor deposition to grow a 1μm silicon dioxide layer on a silicon substrate;

[0081] c Magnetron sputtering bottom electrode on the surface of the silicon dioxide layer, the power of the magnetron sputtering equipment is 400W, 10nm metal chromium is sputtered on the surface of the silicon dioxide layer as the adhesion layer, and 100nm gold is used as the electrode to obtain a direct The technological side of the bonding process;

[0082] d Repeat step (a) to clean the silicon subs...

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Abstract

The invention provides a d15-mode ferroelectric single crystal film piezoelectric vibration sensor and a preparation method thereof, and the method comprises the steps: bonding a bottom electrode / a silicon dioxide layer / a silicon substrate with a lithium niobate wafer, and sequentially carrying out the thinning, chemical mechanical polishing and cleaning, thereby obtaining a lithium niobate single crystal film; the method comprises the following steps: preparing an alignment mark and a surface electrode on the surface of a wafer by adopting magnetron sputtering and ion beam etching stripping processes, then etching a lithium niobate single crystal film by adopting an ion beam etching method to pattern the lithium niobate single crystal film, etching a silicon dioxide layer by adopting a reactive ion etching method to pattern the silicon dioxide layer, and then etching a bottom electrode by adopting an ion beam etching method to pattern the bottom electrode, thereby obtaining the lithium niobate single crystal film. And finally preparing the cantilever beam and the mass block from the front surface of the silicon substrate by adopting a deep silicon etching process, and completing the release of the device from the back. According to the invention, the ferroelectric single crystal lithium niobate film and the silicon wafer can be well bonded, a standard MEMS process is adopted to prepare the sensing device on the basis, the process feasibility and the repetition rate are high, and the prepared device has a broadband and a very high output voltage.

Description

technical field [0001] The application belongs to the technical field of MEMS structure process preparation, and in particular relates to a d 15 Mode ferroelectric single crystal thin film piezoelectric vibration sensor and preparation method thereof. Background technique [0002] Vibration signal is the main monitoring parameter of monitoring system. In a variety of vibration environments, effectively extracting and monitoring vibration signals poses severe challenges to traditional vibration sensors. Piezoelectric vibration sensors based on piezoelectric materials have become the main development of future vibration sensors. direction. At present, there are five main types of piezoelectric materials, such as piezoelectric crystals, piezoelectric ceramics, piezoelectric polymers, piezoelectric composite materials and piezoelectric films. Although piezoelectric crystals, piezoelectric ceramics, piezoelectric polymers and piezoelectric composites all have their excellent pr...

Claims

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Application Information

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IPC IPC(8): H01L41/316C23C14/16C23C14/35C23C14/58C23C16/40C23C16/50C23C16/56H01L41/113H01L41/187
CPCC23C16/402C23C16/50C23C14/35C23C16/56C23C14/5833C23C14/5873C23C14/165H10N30/302H10N30/8542H10N30/076
Inventor 耿文平丑修建魏慧芬毕开西穆继亮何剑侯晓娟
Owner ZHONGBEI UNIV
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