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Growth method of gallium oxide bulk single crystal with low dislocation density

A growth method, gallium oxide technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of high melting point, difficult industrialization, high production cost, etc., achieve low dislocation density, low production cost, crystal The effect of less defects

Pending Publication Date: 2022-08-02
杭州镓仁半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

β-Ga prepared by this method 2 o 3 Although the quality of single crystal has been improved, the dislocation density is still as high as 10 5 ~10 6 piece / cm 2 , and the guided mode method requires a complete set of crucibles, molds and crucible covers, etc., and the preparation of β-Ga 2 o 3 The melting point is relatively high, and precious metals such as iridium, platinum and rhodium are used, and the production cost is relatively high and it is not easy to industrialize

Method used

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  • Growth method of gallium oxide bulk single crystal with low dislocation density
  • Growth method of gallium oxide bulk single crystal with low dislocation density

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Embodiment 1

[0043] see figure 1 and figure 2 , the present invention is a low dislocation density gallium oxide bulk single crystal growth method, comprising the following steps: first wipe with a clean cloth alcohol, then use an industrial vacuum cleaner to clean the furnace, insulation layer and crucible, etc., and then in a clean room with a purity greater than 99.99% 5N grade gallium oxide raw material is loaded into the crucible, the crucible is placed in the furnace of the single crystal furnace, and the β-Ga in the [010] direction is placed in the crucible. 2 O 3 The crystal seed is loaded on the seed rod, and the seed rod is centered. After the furnace is finally closed, the vacuum is evacuated to 1×10 -3 Below Pa, recharge with 1 atmosphere of CO 2 The gas is used as a protective gas to heat the crucible. After the gallium oxide raw material is completely melted, the high temperature melt state is maintained for 5 hours. The thickness of liquid flow, the size of the floating...

Embodiment 2

[0045] see figure 1 , the present invention is a low dislocation density gallium oxide bulk single crystal growth method, comprising the following steps: first wipe with a clean cloth alcohol, then use an industrial vacuum cleaner to clean the furnace, insulation layer and crucible, etc., and then in a clean room with a purity greater than 99.99% 5N grade gallium oxide raw material is loaded into the crucible, the crucible is placed in the furnace of the single crystal furnace, and the β-Ga in the [010] direction is placed in the crucible. 2 O 3 The crystal seed is loaded on the seed rod, and the seed rod is centered. After the furnace is finally closed, the vacuum is evacuated until the vacuum degree is 1×10. -3 Below Pa, recharge with 1 atmosphere of CO 2 The gas is used as a protective gas to heat the crucible. After the gallium oxide raw material is completely melted, the high temperature melt state is maintained for 3 hours, and the seed crystal is lowered to 10mm above...

Embodiment 3

[0047] see figure 1 , the present invention is a low dislocation density gallium oxide bulk single crystal growth method, comprising the following steps: first wipe with a clean cloth alcohol, then use an industrial vacuum cleaner to clean the furnace, insulation layer and crucible, etc., and then in a clean room with a purity greater than 99.99% 5N grade gallium oxide raw material is loaded into the crucible, the crucible is placed in the furnace of the single crystal furnace, and the β-Ga in the [010] direction is placed in the crucible. 2 O 3 The crystal seed is loaded on the seed rod, and the seed rod is centered. After the furnace is finally closed, the vacuum is evacuated to 1×10 -3 Below Pa, recharge with 1 atmosphere of CO 2 The gas is used as a protective gas to heat the crucible. After the gallium oxide raw material is completely melted, the high temperature melt state is maintained for 3 hours, and the seed crystal is lowered to 10mm above the liquid level, and ma...

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Abstract

The invention discloses a growth method of a low-dislocation-density gallium oxide bulk single crystal, which comprises the following steps: growing a crystal by adopting a kyropoulos method, simultaneously lifting a seed crystal upwards at a certain lifting speed, cooling a seed crystal rod to adjust the temperature step, and controlling the growth speed of the crystal by adjusting the temperature gradient in a furnace. The temperature gradient of crystal growth is controlled by controlling the heating power and cooling the seed crystal rod, so that the growth speed of the crystal is controlled, the thermal stress of the crystal is reduced, the crystal cracking is reduced, the internal defect density of the crystal is reduced, and the crystal quality is effectively improved; and the temperature gradient is increased by pulling at a certain speed in the whole crystal growth process, so that the crystal growth is favorably controlled.

Description

【Technical field】 [0001] The present invention relates to the technical field of a gallium oxide bulk single crystal, in particular to the technical field of a growth method of a low dislocation density gallium oxide bulk single crystal. 【Background technique】 [0002] With the rapid development of 5G mobile communications, photovoltaic power generation, high-voltage power transmission and transformation, electric vehicles, high-speed rail transit and other fields, wide-bandgap and ultra-wide-bandgap semiconductors have become the research hotspots of today's semiconductor materials and devices. As a new type of ultra-wide band gap semiconductor material, gallium oxide has a band gap of 4.7-4.9 eV. Compared with the third-generation wide band gap semiconductor, gallium oxide has a larger band gap and higher breakdown field strength. , larger Baliga quality factor and other advantages, will be expected to be applied to ultraviolet detectors, high-power devices and other field...

Claims

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Application Information

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IPC IPC(8): C30B15/20C30B29/16
CPCC30B15/203C30B17/00C30B29/16Y02P70/50
Inventor 刘莹莹夏宁张辉杨德仁
Owner 杭州镓仁半导体有限公司
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